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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
- Thermally-enhanced packages
- Broadband internal matching
- Typical EDGE performance - Average output power = 50 W - Gain = 19.0 dB - Efficiency = 44%
- Typical CW performance - Output power at P–1dB = 135 W - Gain = 18.0 dB - Efficiency = 64%
- Integrated ESD protection: Human Body Model, Class 2 (minimum)
- Pb-free and RoHS compliant
- Excellent thermal stability, low HCI drift
- Capable of handling 10:1 VSWR @ 28 V,
120 W (CW) output power
*See Infineon distributor for future availability.
Data Sheet 3 of 10 Rev. 03.1, 2016-06-21 PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) VDD = 28 V, IDQ = 750 mA, ƒ 1 = 959 MHz, ƒ2 = 960 MHz -70 -60 -50 -40 -30 -20 -10 37 39 41 43 45 47 49 Output Power, Avg. (dBm) IMD (dBc) 3rd Order 7th 5th CW Sweep in a Broadband Test Fixture VDD = 28 V, IDQ = 750 mA, POUT = 50.79 dBm 900 910 920 930 940 950 960 970 980 Frequency (MHz) Gain (dB) Gain Return Loss Efficiency Efficiency (%)Return Loss (dB) -15 -25 -35 Typical Performance (data taken in a production test fixture) *See Infineon distributor for future availability. IM3 vs. Output Power at Selected Biases VDD = 28 V, ƒ 1 = 959, ƒ 2 = 960 MHz, series show I DQ -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 Output Power, Avg. (dBm) IMD (dBc) 525 mA 940 mA 750 mA Power Sweep VDD = 28 V, ƒ = 960 MHz 17.5 18.0 18.5 19.0 19.5 20.0 20.5 40 42 44 46 48 50 52 Output Power (dBm) Power Gain (dB) IDQ = 1125 mA IDQ = 375 mA IDQ = 750 mA
Data Sheet 4 of 10 Rev. 03.1, 2016-06-21 PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 750 mA, ƒ = 960 MHz 40 43 46 49 52 Output Power (dBm) Gain (dB) Drain Efficiency (%) Efficiency Gain Frequency Sweep at P–1dB VDD = 28 V, IDQ = 750 mA 900 910 920 930 940 950 960 Frequency (MHz) Gain (dB) Efficiency (%), POUT (dBm) Output Power Efficiency Gain EDGE EVM Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz 36 38 40 42 44 46 48 50 Output Power, Avg. (dBm) EVM RMS (average %) . Drain Efficiency (%)EVM Efficiency Typical Performance (cont.) Output Power (P–1 dB) vs. Supply Voltage IDQ = 750 mA, ƒ = 960 MHz 49.5 50.0 50.5 51.0 51.5 52.0 52.5 24 26 28 30 32 Supply Voltage (V) Output Power (dBm)
E V
Data Sheet 6 of 10 Rev. 03.1, 2016-06-21 PTFA091201E PTFA091201F Confidential, Limited Internal Distribution a09 1201ef_sch VDD 2KV C30.001µF 0.001µF BCP56 1.3K V QQ1 LM7805 0.001µF VDD 5.1K V 2KV 1.2K V 10 V DUT RF_IN 0.1µF 0.1µF 10µF 35V 0.01µF 33pF C10 33pF 10 V C12 7.5pF C11 1.2pF C13 0.7pF l2 l3 l4 l8 C19 33pF 5.1K V 33pF C24 1.0pF C25 1.0pF C27 33pF C14 33pF C15 1µF C16 10µF 50V C18 10µF 50V C26 2.4pF C28 0.5pF C17 0.1µF l9 l10 l11 l12 l13 C20 1µF C21 10µF 50V C22 0.1µF C23 10µF 50V RF_OUT Reference Circuit Reference circuit schematic for ƒ = 960 MHz Circuit Assembly Information DUT PTFA091201E or PTFA091201F LDMOS Transistor PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper Microstrip Electrical Characteristics at 960 MHz1 Dimensions: L x W ( mm) Dimensions: L x W (in.) 1Electrical characteristics are rounded.
Data Sheet 7 of 10 Rev. 03.1, 2016-06-21 PTFA091201E PTFA091201F Confidential, Limited Internal Distribution A091201in_01 A091201out_01 QQ1C3 C2R1 R6 R7C9 C11 C10 C12 C13 C14 C24 C25 C26 C19 C21 C22 C16 C17 C23 C18 C27 C28 C15 C20 a091201ef_assy RF_IN RF_OUT LM VDD VDD VDD Reference Circuit (cont.) Reference circuit assembly diagram (not to scale)* *Gerber Files for this circuit available on request Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND C5, C7 C17, C22 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C6, C9, C10, C14, Ceramic capacitor, 33 pF ATC 100B 330 C19, C27 C8 Capacitor, 0.01 µF ATC 200B 103 C11 Ceramic capacitor, 1.2 pF ATC 100B 1R2 C12 Ceramic capacitor, 7.5 pF ATC 100B 7R5 C13 Ceramic capacitor, 0.7 pF ATC 100B 0R7 C15, C20 Capacitor, 1.0 µF ATC 920C105 C16, C18, C21, C23 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400 C24, C25 Ceramic capacitor, 1.0 pF ATC 100B 1R0 C26 Ceramic capacitor, 2.4 pF ATC 100B 2R4 C28 Ceramic capacitor, 0.5 pF ATC 100B 0R5 L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND R3 Chip Resistor 2 k-ohms Digi-Key P2KECT-ND R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND R5, R7 Chip Resistor 5.1 k-ohms Digi-Key P5.1KECT-ND R6, R8 Chip Resistor 10 ohms Digi-Key P10ECT-ND
Data Sheet 8 of 10 Rev. 03.1, 2016-06-21 PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36248-2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products CL 34.04 [1.340] 19.81±0.20 [.780±.008] 1.02 [.040] 19.43 ±0.51 [.765±.020] (45° X 2.72 [.107]) 2X 12.70 [.500] 4.83±0.51 [.190±.020] 27.94 [1.100] 4X R1.52 [R.060] 2X R1.63 [R.064] D G S FLANGE 9.78 [.385] 0.0381 [.0015] -A- 071117_h-36248-2_po CL CL 3.61±0.38 [.142±.015] SPH 1.57 [.062] [.370 ]+.004 –.006 LID 9.40+0.10 –0.15 Diagram Notes—unless otherwise specified: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads : 1.14 ± 0.38 micron [45 ± 15 microinch]
Data Sheet 9 of 10 Rev. 03.1, 2016-06-21 PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37248-2 Diagram Notes—unless otherwise specified: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products CL 0.0381 [.0015] 2X 12.70 [.500] 19.43±0.51 [.765±.020] 19.81±0.20 [.780±.008] SPH 1.57 [.062] FLANGE 9.78 [.385] S G D ( 45° X 2.72 [.107]) 20.57 [.810] -A- 3.61±0.38 [.142±.015] 1.02 [.040] 4.83±0.51 [.190±.020] CL CL [R.020 ]+.015 –.005 4X R0.508 +0 .381 –0.127 LID 9.40 +0.10 –0.15 [.370 ]+.004 .006 071117_h-37248-2_po
Data Sheet 10 of 10 Rev. 03.1, 2016-06-21 PTFA091201E/F Confidential, Limited Internal Distribution Revision History: 2016-06-21 Data Sheet Previous Version: 2007-11-19, Data Sheet Page Subjects (major changes since last revision) 2 Update ordering information. GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2007-11-19 Published by Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International