PTFA041501E INFINEON | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • Broadband internal matching
  • Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41%
  • Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 175 W - Efficiency = 62%
  • Integrated ESD protection: Human Body Model, Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

150 W (CW) output power

  • Pb-free and RoHS-compliant Single-carrier CDMA IS-95 Performance VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 36 38 40 42 44 46 48 Average Output Power (dBm) Drain Efficiency (%) Adjacent Channel Power Ratio (dB) Efficiency ACPR –15°C 25°C 90°C ALT *See Infineon distributor for future availability.

Data Sheet 2 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 20.0 21.0 — dB Drain Efficiency η D 45.0 46.5 — % Intermodulation Distortion IMD — –29 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2 2.48 3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) Rθ JC 0.42 °C/W *See Infineon distributor for future availability.

Ordering Information

Type and Version Package Type Package Description Shipping PTFA041501E V4 H-36248-2 Thermally-enhanced slotted flange, single-ended Tray PTFA041501E V4 R250 H-36248-2 Thermally-enhanced slotted flange, single-ended Tape & Reel, 250 pcs PTFA041501F V4 H-37248-2 Thermally-enhanced earless flange, single-ended Tray PTFA041501F V4 R250 H-37248-2 Thermally-enhanced earless flange, single-ended Tape & Reel, 250 pcs

Data Sheet 3 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Power Sweep at selected I DQ VDD = 28 V, ƒ = 470 MHz 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 39 41 43 45 47 49 51 53 55 Output Power (dBm) Gain (dB) IDQ = 1125 mA IDQ = 900 mA IDQ = 675 mA Broadband Circuit Performance VDD = 28 V, IDQ = 900 mA, POUT = 80 W 460 462 464 466 468 470 Frequency (MHz) Gain (dB), Efficiency (%) -20 -19 -18 -17 -16 -15 -14 -13 Input Return Loss (dB)Gain Efficiency Return Loss Typical Performance (data taken in a production test fixture) Power Sweep, CW Conditions VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz 39 41 43 45 47 49 51 53 55 Output Power (dBm) Gain (dB) Drain Efficiency (%) Gain Efficiency TCASE = 25°C TCASE = 90°C POUT, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, IDQ = 900 mA 460 462 464 466 468 470 Frequency (MHz) 19.9 20.1 20.2 20.3 20.4 20.5 20.6 20.7 20.8 20.9 Gain (dB) Gain Efficiency Output Power Efficiency (%), Output Power (dBm)

Data Sheet 4 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Output Power (at 1 dB compression) vs. Supply Voltage IDQ = 900 mA, ƒ = 470 MHz 24 26 28 30 32 Supply Voltage (V) Output Power (dBm) Typical Performance (cont.) Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 900 mA, ƒ 1 = 469 MHz, ƒ2 = 470 MHz -70 -60 -50 -40 -30 -20 -10 36 38 40 42 44 46 48 50 Output Power (dBm), avg. Drain Efficiency (%) IM5 IM7 Intermodulation Distortion (dBc) IM3 Efficiency IM3 vs. Output Power at Selected Biases VDD = 28 V , ƒ1 = 469 MHz, ƒ2 = 470 MHz -43 -41 -39 -37 -35 -33 -31 -29 -27 -25 36 38 40 42 44 46 48 50 Output Power (dBm) IMD (dBc) 675 mA 900 mA 1125 mA Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 Case Temperature (°C) Normalized Bias Voltage (V) 0.29 A 0.88 A 1.47 A 2.20 A 4.41 A 6.61 A 8.81 A 11.02 A

Data Sheet 5 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Z Load G S D Frequency Z Source W Z Load W MHz R jX R jX 450 0.88 –3.20 1.33 0.22 455 0.84 –3.20 1.35 0.31 460 0.84 –3.10 1.40 0.38 465 0.84 –3.00 1.41 0.47 470 0.83 –2.90 1.44 0.57 0.1 0.2 0.1 0.1 - W AVELENGTHS TOW ARD G <--- W AVELENGTHS TOW ARD LOAD - 0.0

450 MHz

470 MHz

See next page for circuit information Z0 = 50 Ω

Data Sheet 6 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Reference circuit schematic for ƒ = 460 MHz Circuit Assembly Information DUT PTFA041501E or PTFA041501F LDMOS Transistor PCB LTN/PTFA041501EF 0.76 mm [.030"] thick, εr = 9.2 Rogers TMM10 2 oz. copper Microstrip Electrical Characteristics at 460 MHz 1 Dimensions L x W (mm) Dimensions L x W (in.) Reference Circuit VDD 1.3K V 1.2K V 2K V 2K V 3.3K V DUT 10µF 35V l3 l5 l10 l11 l12 l13 l14 0.1µF 5.1K V 120pF C11 1µF C12 10µF 50V C13 0.1µF 50V C10 100pF C14 10µF 50V 10 V 100pF 11pF 4.3pF C20 5.6pF C22 11pF C21 5.1pF C23 11pF C25 100pF C24 8.2pF C16 1µF C17 10µF 50V C18 0.1µF 50V C15 100pF C19 10µF 50V 0.001µF 0.001µF BCP56 QQ1 LM7805 0.001µF VDD V66000-G9267-D631-01-7606.dwg

Data Sheet 7 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution QQ1 R6 R7 GND VDD R6 R7 C11 C13C6 C16C15 C10 C22C20 C21 C23 C24 C25 C18 C14C12 C17 C19041501in_03 041501out_03 RF IN RF OUT V66100-G9267-D631-01-7631.dwg Reference Circuit (cont.) Reference circuit assembly diagram (not to scale). Gerber files for this circuit available on request. R6 R7 C4 C3 R6 R7 R5 R4 C1QQ1

Data Sheet 8 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND C5, C13, C18 Capacitor, 0.1 µF Digi-Key P4525-ND C6 Ceramic capacitor, 120 pF ATC 100B 121 C7, C10, C15, C25 Ceramic capacitor, 100 pF ATC 100B 101 C8, C22, C23 Ceramic capacitor, 11 pF ATC 100B 110 C9 Ceramic capacitor, 4.3 pF ATC 100B 4R3 C11, C16 Capacitor, 1.0 µF ATC 920C105 C12, C14, C17, C19 Capacitor, 10 µF, 50 V Garrett Electronics TPS106K050R0400 C20 Ceramic capacitor, 5.6 pF ATC 100B 5R6 C21 Ceramic capacitor, 5.1 pF ATC 100B 5R1 C24 Ceramic capacitor, 8.2 pF ATC 100B 8R2 L1, L2 Ferrite, 6 mm Ferroxcube 53/3/4.6-452 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip resistor, 1.2k ohms Digi-Key P1.2KGCT-ND R2 Chip resistor, 1.3k ohms Digi-Key P1.3KGCT-ND R3 Chip resistor, 2k ohms Digi-Key P2.0KECT-ND R4 Potentiometer, 2k ohms Digi-Key 3224W-202ETR-ND R5 Chip resistor, 3.3k ohms Digi-Key P3.3KECT-ND R6 Chip resistor, 10 ohms Digi-Key P10ECT-ND R7 Chip resistor, 5.1k ohms Digi-Key P5.1KECT-ND

Data Sheet 9 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36248-2 Diagram Notes—unless otherwise specified: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] CL 34.04 [1.340] 19.81±0.20 [.780±.008] 1.02 [.040] 19.43 ±0.51 [.765±.020] (45° X 2.72 [.107]) 2X 12.70 [.500] 4.83±0.51 [.190±.020] 27.94 [1.100] 4X R1.52 [R.060] 2X R1.63 [R.064] D G S FLANGE 9.78 [.385] CL CL 3.61±0.38 [.142±.015] SPH 1.57 [.062] [.370 ]+.004 –.006 LID 9.40+0.10 –0.15

Data Sheet 10 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37248-2 Diagram Notes—unless otherwise specified: 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower CL 0.0381 [.0015] 2X 12.70 [.500] 19.43±0.51 [.765±.020] 19.81±0.20 [.780±.008] SPH 1.57 [.062] FLANGE 9.78 [.385] S G D ( 45° X 2.72 [.107]) 20.57 [.810] -A- 3.61±0.38 [.142±.015] 1.02 [.040] 4.83±0.51 [.190±.020] CL CL [R.020 ]+.015 –.005 4X R0.508 +0.381–0.127 LID 9.40 +0.10 –0.15 [.370 ]+.004 –.006 071117_h-37248-2_po

Data Sheet 11 of 11 Rev. 01.1, 2010-01-20 PTFA041501EF V4 Confidential, Limited Internal Distribution Revision History: 2010-01-20 Data Sheet Previous Version: none Page Subjects (major changes since last revision) 6, 9, 10 Minor cosmetic changes only GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2010-01-20 Published by Infineon Technologies AG

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com/rfpower ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International