PTF211802 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Broadband internal matching
  • Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc
  • Typical CW performance - Output power at P–1dB = 180 W - Efficiency = 50%
  • Integrated ESD protection: Human Body Model, Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

180 W (CW) output power

RF Characteristics at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 38 W AVG f1 = 2140 MHz, f2 = 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Units Intermodulation Distortion IM3 — –37 — dBc Gain Gps — 15 — dB Drain Efficiency η D — 25 — % Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz Characteristic Symbol Min Typ Max Units Gain Gps 12.5 15 — dB Drain Efficiency η D 20 22 — % Intermodulation Distortion IMD — –40 –38 dBc PTF211802A Package 20275 PTF211802 ESD: Electrostatic discharge sensitive device — observe handling precautions! PTF211802E Package 30275

2080 2100 2120 2140 2160 2180 2200 Frequency (MHz) Gain (dB), Efficiency (%) -35 -30 -25 -20 -15 -10 Input Return Loss (dB)Gain Efficiency Return Loss VDD = 28 V, IDQ = 2.0 A, POUT = 38 W Power Sweep, under Pulsed Conditions VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz, pulse period = 1 ms, 0.8% duty cycle 30 32 34 36 38 40 42 44 Input Power (dBm) Output Power (dBm) P-1dB = 52.8 dBm P-3dB = 53.6 dBm Ideal Actual Typical Performance (data taken in a production test fixture) DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA/side V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.0 A/side VGS 2.5 3.2 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PTF211802A PD 498 W Above 25°C derate by 2.85 W/°C Total Device Dissipation PTF211802E PD 647 W Above 25°C derate by 3.70 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance PTF211802A RθJC 0.35 °C/W (TCASE = 70°C, 130 W CW) PTF211802E RθJC 0.27 °C/W

Intermodulation Distortion vs. Output Power for selected currents VDD = 28 V, f = 2140 MHz, tone spacing = 5 MHz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 39 41 43 45 47 49 51 53 55 Output Power (dBm), PEP Intermodulation Distortion (dBc) 2.0 A 1.8 A 2.2 A 2.4 A 1.6 A Intermodulation Distortion Products vs. Tone Spacing -60 -55 -50 -45 -40 -35 -30 -25 -20 0 5 10 15 20 25 30 Tone Spacing (MHz) Intermodulation Distortion (dBc) 5th 3rd Order 7th VDD = 28 V, IDQ = 2.0 A, POUT (PEP) = 170 W, f = 2140 MHz Typical Performance (cont.) Single–Carrier WCDMA Drive–Up 37 38 39 40 41 42 43 44 45 46 47 Output Power (dBm), Avg. Drain Efficiency (%), Gain (dB) -60 -55 -50 -45 -40 -35 -30 ACPR (dBc) Gain Drain Efficiency ACPR VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW Two–Tone Drive–Up 42 44 46 48 50 52 54 Output Power (dBm), PEP Drain Efficiency (%) -60 -55 -50 -45 -40 -35 -30 -25 -20 VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz, tone spacing = 5 MHz Efficiency IM3 IM5 IM7 Intermodulation Distortion (dBc)

Broadband Circuit Impedance Data VDD = 28 V, IDQ = 1900 mA, POUT = 30 W AVG Two–Carrier WCDMA IM3, Drain Efficiency and Gain vs. Supply Voltage IDQ = 2.0 A, POUT (PEP) = 170 W, f = 2140 MHz, tone spacing = 5 MHz 22 24 26 28 30 32 34 Drain Voltage (V) -50 -45 -40 -35 -30 -25 -20 -15 -10 IM3 (dBc) Gain Drain Efficiency IM3 Drain Efficiency (%), Gain (dB) Bias Voltage vs. Case Temperature Voltage normalized to typical gate voltage. 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 30 80 130 Case Temperature (°C) Normalized Bias Voltage 3.00 A 6.00 A 9.00 A 12.00 A 15.00 A 18.00 A Frequency Z Source Ω Z Load Ω MHz R jX R jX 2070 10.22 -14.00 4.28 1.24 2110 9.56 -13.48 4.06 1.94 2140 9.14 -13.00 3.98 2.42 2170 8.70 -12.60 3.84 2.90 2200 8.24 -12.22 3.76 3.34 Typical Performance (cont.) 0.1 0.3 0.2 0.4

2200 MHz

2070 MHz

Z0 = 50 Ω Z Source Z Load G D G S D Series show current.

Circuit Assembly Information DUT PTF211802E LDMOS transistor Circuit board 0.76 mm [.030”] thick, εr = 3.48 Rogers 4350, 2 oz. copper Microstrip Electrical Characteristics at 2140 MHz Dimensions: L x W (mm.) Dimensions: L x W (in.) Reference Circuit Reference Circuit Schematic for 2140 MHz 211802_sch-e C11 8.2pF 8.2pF RF_IN l1 l2 C10 0.1µF l3 l4 l6 l8 20pF 20pF LM7805 QQ1 0.1µF l20 l14 10pF C18 l10 l12 l18 l16 50V1µF C19 100µF C20 C17 12pF l22 C15 0.6pF 12pF C16 l24 l25 2 10pF C12 l19 DUT l11l9 l13 R10 10V l15 l17 l21 C13 1µF l23 l26 100µF 50V C14 DDV l27 RF_OUT DDV DDV 0.1pF C7 1.2pF .01µF 3KV 24KV .01µF .01µF 1.3KV 1.2KV R11 10V BCP56 10V 1KV 2KV

Reference Circuit1 (not to scale) Component Description Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.01 µF 50 V Digi-Key PCC1772CT-ND C4, C10 Capacitor, 0.1 µF, 50 V Digi-Key PCC104BCT-ND C5, C11 Capacitor, 8.2 pF ATC 100 B 8R2 C6, C9 Capacitor, 20 pF ATC 100 A 200 C7 Capacitor, 0.1 pF ATC 100 B 0R1 C8 Capacitor, 1.2 pF ATC 100 B 1R2 C12, C18 Capacitor, 10 pF ATC 100 B 100 C13, C19 Capacitor, 1 µF, ceramic, 50 V ATC 920DC105KW100 C14, C20 Capacitor, 100 µF, 50 V, electrolytic Digi-Key P5182-ND C15 Capacitor, 0.6 pF ATC 100 B 0R6 C16, C17 Capacitor, 12 pF ATC 100 B 120 QQ1 Voltage Regulator Digi-Key LM 7805 Q1 Transistor Infineon BCP56 R1 Resistor, 1.2 kΩ , 1/10 W, 0603 Digi-Key P1.2KGCT-ND R2 Resistor, 1.3 kΩ , 1/10 W, 0603 Digi-Key P1.3KGCT-ND R3 Resistor, variable 2 kΩ , 4 W, 1206 Digi-Key 3224W-202ETR-ND R4, R10, R11 Resistor, 10 Ω , 1/4 W, 1206 Digi-Key P10KECT-ND R5 Resistor, 24 kΩ , 1/4 W, 1206 Digi-Key P24KECT-ND R6 Resistor, 1 kΩ , 1/4 W, 1206 Digi-Key P1.0KECT-ND R7 Resistor, 3 kΩ , 1/4 W, 1206 Digi-Key P3.0KECT-ND Reference Circuit (cont.) 1Gerber Files for this circuit available on request. C19 C20C18 R11 C11 INPUT C10 OUTPUT +28V DDV DDV QQ1 C14 C13 C12 C4C3 C1R3 LM R10 R1R6 R5 C16 211802 Rev 2 C15 C17 211802_assy

Package Outline Specifications Type Package Outline Package Description Marking PTF211802A 20275 Standard ceramic, flange PTF211802A PTF211802E 30275 Thermally enhanced, flange PTF211802E Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Package 30275 Package 20275 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate S 41.15 [1.620] 1.63 [.064] 2.18 [.086] SPH 31.24±0.28 [1.230±.011] 35.56 [1.400] 4X 11.68 [.460] D G D 16.61±0.51 [.654±.020] 2X R 1.59 [.063] 2X 3.18 [.125] 9.40 [.370 ] +0.10 -0.15 +.004 -.006 0.51 [.020] 0.038 [.0015] -A- 2X 45°±5° X 1.19 [.047] 4.55±0.38 [.179±.015] 10.16 [.400] 4X 3.23±0.25 [.127±.010] G ERA-H-30275-4-1-2304 [.360 ]+.004 -.006 LID 9.14 +0.10 -0.15

GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2004-02-13 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

81669 München, Germany

© Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTF211802 Confidential Revision History: Data Sheet 2004-02-13 Previous Version: Data Sheet, 2004-01-06 Page Subjects (major changes since last revision) Combine PTF211802A and PTF211802E onto this Data Sheet. 5, 6 Alter circuit configuration We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International