PTF180101 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 %
  • Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR = –45 dBc
  • Typical CW performance - Output power at P–1dB = 15 W - Efficiency = 50%
  • Integrated ESD protection: Human Body Model Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

10 W (CW) output power

RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz Characteristic Symbol Min Typ Max Units Error Vector Magnitude EVM (RMS) — 1.1 — % Modulation Spectrum @ 400 kHz ACPR — –60 — dBc Modulation Spectrum @ 600 kHz ACPR — –70 — dBc Gain Gps — 19 — dB Drain Efficiency η D — 28 — % Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain Gps 18 19 — dB Drain Efficiency η D 30 33 — % Intermodulation Distortion IMD — –30 –28 dBc LDMOS RF Power Field Effect Transistor

10 W, 1805–1880 MHz, 1930–1990 MHz

10 W, 2110–2170 MHz

Description

The PTF180101 is a 10 W, internally–matched GOLDMOS FET device in- tended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. ESD: Electrostatic discharge sensitive device — observe handling precautions! PTF180101S Package 32259

RF Characteristics, WCDMA Operation at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 135 mA, POUT = 1.8 W, f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Units Adjacent Channel Power Ratio ACPR — –45 — dBc Gain Gps — 18 — dB Drain Efficiency η D — 20 — % Two–Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain Gps — 18 — dB Drain Efficiency @ –30 dBc IM3 η D — 37 — % Intermodulation Distortion IMD — –30 — dBc DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) — 0.83 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings at TCASE = 25°C unless otherwise indicated Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 58 W Above 25°C derate by 0.333 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 10 W CW) RθJC 3.0 °C/W

EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz -100 -90 -80 -70 -60 -50 25 30 35 40 Output Power (dBm) ACPR (dBc) Efficiency (%)Efficiency 400 kHz 600 kHz Quiscent Drain Current (A) EVM RMS (Average %) . -110 -100 -90 -80 -70 -60 -50 -40 ACPR (dBc) EVM and Modulation Spectrum Performance f = 1989.8 MHz, POUT = 3.5 W EVM 400 kHz 600 kHz Typical Performance measurements taken in broadband test fixture Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 0.18 A, f = 1990 MHz 29 32 35 38 41 44 Output Power (dBm) Gain (dB) Efficiency (%)Efficiency Gain Output Power, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, IDQ = 0.18 A 1900 1920 1940 1960 1980 2000 2020 Frequency (MHz) Gain (dB) Output Power (dBm), Efficiency (%) Gain Efficiency Output Power

Broadband Test Fixture Performance VDD = 28 V, IDQ = 0.18 A, POUT = 4 W 1900 1930 1960 1990 2020 Frequency (MHz) Gain (dB), Efficiency (%) -40 -30 -20 -10 Return Loss (dB) Gain Return Loss Efficiency Output Power vs. Supply Voltage IDQ = 0.18 A, f = 1990 MHz 22 24 26 28 30 32 Supply Voltage (V) Output Power (dBm) Typical Performance (cont.) Power Gain vs. Output Power VDD = 28 V, f = 1990 MHz 0 1 10 100 Output Power (W) Power Gain (dB) IDQ = 0.135 mA IDQ = 0.180 mA IDQ = 0.235 mA Broadband Test Fixture Performance VDD = 28 V, IDQ = 0.18 A, POUT = 10 W 1900 1930 1960 1990 2020 Frequency (MHz) Gain (dB), Efficiency (%) -35 -25 -15 Return Loss (dB) Gain Return Loss Efficiency

Typical Performance (cont.) Two–Tone Drive–up VDD = 28V, IDQ = 135 mA, f = 2170 MHz, tone spacing = 1 MHz -60 -55 -50 -45 -40 -35 -30 -25 -20 20 25 30 35 40 45 Output Power (dBm), PEP Intermodulation Distortion (dBc) Drain Efficiency (%) IM3 Efficiency Single–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 135 mA, f = 2170 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth -60 -55 -50 -45 -40 -35 17 22 27 32 37 Average Output Power (dBm) Adjacent Channel Power Ratio (dBc) Drain Efficiency (%) ACPR Efficiency -80 -70 -60 -50 -40 -30 -20 30 32 34 36 38 40 42 Output Power, PEP (dBm) IMD (dBc) Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 0.18 A, f1 = 1990 MHz, f2 = 1991 MHz 3rd Order 7th 5th 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 -20 0 20 40 60 80 100 Case Temperature (°C) Normalized Bias Voltage 0.05 A 0.28 A 0.51 A 0.74 A 0.97 A 1.20 A Gate-Source Voltage vs. Case Temperature Voltage normalized to typical gate voltage. Typical Performance, WCDMA Operation Series show current.

0.1 0.2 0.1 0.1 RD GE LENGTHS TOW ARD LOAD - 0.0

2020 MHz

1920 MHz

G S D Z0 = 50 Ω Broadband Circuit Impedance Data Frequency Z Source Ω Z Load Ω MHz R jX R jX 1920 7.3 -2.3 4.6 2.4 1930 8.1 -2.2 4.6 2.5 1960 8.3 -2.6 4.5 2.6 1990 6.5 -4.1 4.5 2.5 2000 6.3 -4.0 4.5 2.5 2020 6.2 -3.7 4.6 2.5

Microstrip Electrical Characteristics at 1990 MHz Dimensions: L x W (mm) Dimensions: L x W (in.) Reference Circuits Circuit Assembly Information DUT PTF180101 LDMOS Transistor Circuit Board 0.76 mm [.030”] thick, εr = 4.5 Rogers TMM4, 2 oz. Copper Reference Circuit Schematic 180101_sch RF_IN VGG DUT C5 C6 RF_OUT DDV l1 l2 l3 l4 l6 l7 l8

Reference circuit assembly diagramt1 (not to scale) 1 Gerber files for this circuit are available upon request. 1930–1990 MHz Operation Component Description Manufacturer P/N or Comment C1, C3, C5, C8 Capacitor, 10 pF ATC 100B 100 C2 Capacitor, 1.7 pF ATC 100B 1R7 C4 Capacitor, 2.0 pF ATC 100A 2R0 C6 Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND C7 Capacitor, 100 µF, 50 V Digi-Key P5182-ND C9 Capacitor, 0.6 pF ATC 100A 0R6 R1, R2, R3 Resistor, 220 ohm, 1/4 W Digi-Key 220QBK 2.11–2.17 GHz Operation Component Description Manufacturer P/N or Comment C1, C3, C5, C8 Capacitor, 10 pF ATC 100B 100 C2 Capacitor, 0.8 pF ATC 100B 0R8 C4 Capacitor, 2.2 pF ATC 100A 2R2 C6 Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND C7 Capacitor, 100 µF, 50 V Digi-Key P5182-ND C9 Capacitor, 1.0 pF ATC 100A 1R0 R1, R2, R3 Resistor, 220 ohm, 1/4 W Digi-Key 220QBK Reference Circuits (cont.)

Ordering Information

Type Package Outline Package Description Marking PTF180101S 32259 Thermally enhanced, surface mount PTF180101S Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate Package Outline Specifications Package 32259 2X 3.30 [.130] 1.02 [0.040] 0.51 [0.020] 2X 0.20±0.03 [.008±.001] 4X R0.25 [R.010] MAX. CL LC 0°-7° DRAFT ANGLE D G S 10.16±0.25 [.400±.010] 6.86 [.270] 2X 1.65±0.51 [.065±.020] 2X 1.27 [.050] 2X 3.30 [.130] 4X 0.51 [.020] 4X 0.25 MAX [.010] 6.35 [.250] SQ 6.86 [.270] 6.48 [.255] SQ 0.74±0.05 [.028±.002] 1.78 [.070] 2.99 ±0.38 [1.14 ±.010] H-32259-2-1-2307 LEAD COPLANARITY BOTTOM OF LEAD TO BOTTOM OF PACKAGE .000±.002 (TYP) 60° X 6.60 [60° X .260] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products

Published by Infineon Technologies AG, St.-Martin-Strasse 53,

81669 München, Germany

© Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International PTF180101 Revision History: 2004-02-03 Data Sheet Previous Version: none Page Subjects (major changes since last revision) 1, 5, 7 Add information about WCDMA operation