PTF080901 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Broadband internal matching
  • Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40%
  • Typical CW performance - Output power at P–1dB = 120 W - Gain = 17 dB - Efficiency = 60%
  • Integrated ESD protection: Human Body Model, Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

90 W (CW) output power

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Description

The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture ) VDD = 28 V, IDQ = 700 mA, POUT = 45 W, f = 959.8 MHz Characteristic Symbol Min Typ Max Unit Error Vector Magnitude EVM (RMS) — 2.5 — % Modulation Spectrum @ 400 kHz ACPR — –62 — dBc Modulation Spectrum @ 600 kHz ACPR — –74 — dBc Gain Gps — 18 — dB Drain Efficiency ηD — 40 — % Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency ηD 40 42 — % Intermodulation Distortion IMD — –32 –29 dBc PTF080901F Package 31248

Typical Performance (measurements taken in production test fixture) Modulation Spectrum POUT = 40 W, f = 959.8 MHz 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 Quiescent Current (A) EVM RMS (average %) . -100 -90 -80 -70 -60 -50 -40 -30 -20 Modulation Spectrum (dBc) EVM

400 KHz

600 KHz

Output Power (dBm) EVM RMS (average %) . Drain Efficiency (%) EDGE EVM Performance VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz EVM Efficiency DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Unit Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — V Operating Gate Voltage VDS = 28 V, IDQ = 650 mA VGS 2.5 3.2 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 335 W Above 25°C derate by 1.9 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 0.52 °C/W All published data at T CASE = 25°C unless otherwise indicated.

-80 -70 -60 -50 -40 -30 -20 -10 43 45 47 49 51 Output Power (dBm), PEP IMD (dBc) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz 3rd Order 7th 5th 860 880 900 920 940 960 Frequency (MHz) Gain (dB) Efficiency (%), POUT (dBm) Output Power Efficiency Gain Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, IDQ = 650 mA Typical Performance (cont.) All published data at T CASE = 25°C unless otherwise indicated. IM3 vs. Output Power at Selected Biases VDD = 28 V, f1 = 959, f2 = 960 MHz -60 -55 -50 -45 -40 -35 -30 -25 -20 39 41 43 45 47 49 51 Output Power (dBm), PEP IMD (dBc) 480 mA 820 mA 650 mA Broadband Performance VDD = 28 V, IDQ = 650 mA, P OUT = 45 W 860 880 900 920 940 960 Frequency (MHz) Gain (dB), Efficiency (%) -15 -12 Return Loss (dB) Gain Return Loss Efficiency

50.0 50.5 51.0 51.5 52.0 24 26 28 30 32 Supply Voltage (V) Output Power (dBm) Output Power (at 1 dB Compression) vs. Supply Voltage IDQ = 650 mA, f = 960 MHz IS-95 CDMA Performance VDD = 28 V, I DQ = 700 mA, f = 880 MHz 40 41 42 43 44 45 Output Power (dBm), Avg. Drain Efficiency (%) -70 -65 -60 -55 -50 -45 -40 Adjacent Channel Power Ratio (dBc) Efficiency ACP FC – 0.75 MHz ACPR FC + 1.98 MHz Power Sweep VDD = 28 V, f = 960 MHz 16.5 17.0 17.5 18.0 18.5 19.0 37 39 41 43 45 47 49 51 53 Output Power (dBm) Power Gain (dB) IDQ = 820 mA IDQ = 480 mA IDQ = 650 mA Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 650 mA, f = 960 MHz 40 43 46 49 52 Output Power (dBm) Gain (dB) Drain Efficiency (%) Efficiency Gain Typical Performance (cont.) All published data at T CASE = 25°C unless otherwise indicated.

Series show current. PTF080901 Typical Performance (cont.) Three–Carrier CDMA 2000 Performance VDD = 28 V, IDQ = 700 mA, f = 880 MHz 39 40 41 42 43 44 45 Output Power (dBm), Avg. Drain Efficiency (%) -65 -62 -59 -56 -53 -50 -47 -44 Adjacent Channel Power Ratio (dBc) Efficiency ALT Up ACP Low ACP Up Bias Voltage vs. Temperature Voltage normalized to typical gate voltage. 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 Case Temperature (ºC) Normalized Bias Voltage 1.50 A 3.00 A 4.50 A 6.00 A 7.50 A 9.00 A All published data at T CASE = 25°C unless otherwise indicated. Broadband Circuit Impedance 0.1 0.2 0.1 0.1 AVELENG THS TOW ARD GENE ---W AVELENGTHS TOW ARD LOAD - 0.0

860 MHz 860 MHz

980 MHz980 MHz

Z0 = 50 Ω Frequency Z Source Ω Z Load Ω MHz R jX R jX 860 2.50 –1.09 1.98 –1.08 920 2.67 –0.43 1.99 –0.32 940 2.79 –0.35 1.87 –0.21 960 2.94 0.12 1.85 0.27 980 2.91 0.37 1.79 0.53 Z Source Z Load G S D Data Sheet 2004-04-05

Test Circuit Schematic for 960 MHz Circuit Assembly Information DUT PTF080901 LDMOS Transistor Microstrip Electrical Characteristics at 960 MHz Dimensions: L x W (mm.) Dimensions: L x W (in.) QQ1 LM7805 1µF C16 33pF C17 RF_IN 1.4pF C13 DUT 2.2pF C12 33pF 35V35V C18 C19 50V C20 C15 33pF C14 0.5pF 10µF 35V 0.1µF 50V C10 RF_OUT 080901_sch 1µF 10µF10µF 0.1µF 5.1 kV 33 pF 10 µF, 35 V 0.001 µF C23 l1 l2 l3 l5 l9 l10 l11 VDD 22 kV 10 kV 3.3 kV 1.2 kV BCP56 33pF 4.3pF C5 C6 6.2pF 10µF 35V C11 1.3 kV 0.001 µF C21 0.001 µF C22 0.1 µF 50 V 10 V

Reference Circuit1 (not to scale) Component Description Manufacturer P/N or Comment C1, C9, C11, C18, Capacitor, 10 µF, 35 V Digi-Key Tantalum TE Series SMD C20 PCS6106TR-ND C2, C10, C19 Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND C3, C4, C7, C15, Capacitor, 33 pF ATC 100B 330 C16 C5 Capacitor, 4.3 pF ATC 100B 4R3 C6 Capacitor, 6.2 pF ATC 100B 6R2 C8, C17 Capacitor, 1 µ, 50 V Digi-Key 19528-ND C12 Capacitor, 2.2 pF ATC 100B 2R2 C13 Capacitor, 1.4 pF ATC 100B 1R4 C14 Capacitor, 0.5 pF ATC 100B 0R5 C21, C22, C23 Capacitor, 0.001 µF, 50 V, 0603 Digi-Key PCC1772CT-ND L1, L2 Ferrite, 6 mm Philips 53/3/4.6-452 Q1 Transistor Infineon BCP56 QQ1 Voltage Regulator National Semiconductor LM7805 R1 Resistor, 10 ohms, 1/4 W, 1206 Digi-Key P10ECT-ND R2 Resistor, 5.1 k-ohms, 1/4 W, 1206 Digi-Key P5.1KECT-ND R3 Resistor, 1.2 k-ohms, 1/10 W, 0603 Digi-Key P1.2KGCT-ND R4 Resistor, 1.3 k-ohms, 1/10 W, 0603 Digi-Key P1.3KGCT-ND R5 Resistor, Variable, 10 k-ohms, 1/4 W Digi-Key 3224W-103ETR-ND R6 Resistor, 22 k-ohms, 1/10 W, 0603 Digi-Key P22KGCT-ND R7 Resistor, 3.3 k-ohms, 1/4 W, 1206 Digi-Key P3.3KECT-ND 1Gerber files for this circuit are available on request. Test Circuit (cont.) R1 R2 080901_assy 35V C15C14 C19 L2C16 C17 C6 C13 C18 C20 C12 C10 C11 RF_OUTRF_IN VGS VDD VDD C23 C21 LM R7 R5 QQ1 C22 1 00 35V + 10 35V + 10 35V 35V 5 12

Ordering Information

Type Package Outline Package Description Marking PTF080901E 30248 Thermally enhanced, flange mount PTF080901E PTF080901F 31248 Thermally enhanced, earless PTF080901F Package Outline Specifications Package 30248 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products 34.04 [1.340] 19.81±0.20 [.780±.008] 1.02 [.040] 19.43 ±0.51 [.765±.020] (45° X 2.72 [.107]) 2X 12.70 [.500] 2X 4.83±0.51 [.190±.020] 27.94 [1.100] 4X R1.52 [.060] 2X R1.63 [.064] D G S9.78 [.385] 0.0381 [.0015] -A- 0.51 [.020] PKG_248_0 CL CL LID 9.40+0.10 -0.15 3.76±0.38 [.142±.015] SPH 1.57 [.062] [.370 ]+.004 -.006

Package Outline Specifications Package 31248 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 0.0381 [.0015] 2X 12.70 [.500] 19.43±0.51 [.765±.020] 19.81±0.20 [.780±.008] SPH 1.58 [.062] 9.78 [.385] S G D ( 45° X 2.72 [.107]) 20.57 [.810] -A- 3.61±0.38 [.142±.015] 1.02 [.040] 0.51 [.020] 4.83±0.51 [.190±.020] PKG_248_1 CL CL[.370 ]+.004 -.006 LID 9.40 +0.10 -0.15

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International PTF080901 Confidential - Limited Internal Revision History: 2004-04-05 Data Sheet Previous Version: 2004-01-02, Data Sheet Page Subjects (major changes since last revision) 1,8,9 Add information about PTF080901F, new package outline diagrams 6,7 Circuit information updated. GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2004-04-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

81669 München, Germany

© Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.