PTF080101M INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Typical EDGE performance - Average output power = 5.0 W - Gain = 19 dB - Efficiency = 37% - EVM = 2.0%
  • Typical CW performance - Output Power at P–1dB = 12.5 W - Gain = 18 dB - Efficiency = 50%
  • Integrated ESD protection: Human Body Model Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

10 W (CW) output power

  • Pb-free and RoHS compliant

Data Sheet 2 of 8 Rev. 02.1, 2009-02-18 PTF080101M *See Infineon distributor for future availability. DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) — 0.83 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 150 °C Total Device Dissipation PD 18.8 W Above 25°C derate by 0.15 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 10 W DC) Rθ JC 6.5 °C/W

Ordering Information

Type Package Outline Package Description Marking PTF080101M PG-RFP-10 Molded plastic, SMD 0081

Data Sheet 3 of 8 Rev. 02.1, 2009-02-18 PTF080101M Typical Performance (data taken in production test fixture) Broadband Performance VDD = 28 V, IDQ = 180 mA, POUT = 40 dBm -20 -10 880 900 920 940 960 980 1000 Frequency (MHz) Gain (dB), Return Loss (dB) Drain Efficiency (%) Gain Return Loss Efficiency Typical EDGE Performance VDD = 28 V, IDQ = 180 mA, ƒ = 959.8 MHz 28 30 32 34 36 38 Output Power (dBm) RMS EVM (Average %). Drain Efficiency (%) EVM Efficiency EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 180 mA, ƒ = 959.8 MHz -80 -70 -60 -50 -40 -30 26 28 30 32 34 36 38 40 Output Power (dBm) Modulation Spectrum (dBc) 200 kHz 400 kHz 600 kHz Two-tone Drive-up VDD = 28 V, IDQ = 180 mA, ƒ = 960 MHz, 1 MHz tone spacing -70 -60 -50 -40 -30 -20 20 25 30 35 40 Output Power, avg. (dBm) IMD (dBc) Drain Efficiency (%) Efficiency IM3 IM7 IM5

Data Sheet 4 of 8 Rev. 02.1, 2009-02-18 PTF080101M Gate-Source Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current. 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 -20 0 20 40 60 80 100 Case Temperature (ºC) Normalized Bias Voltage 0.05 0.28 0.51 0.74 0.97 1.2 Typical Performance (cont.) Broadband Circuit Impedance Z Source Z Load G S D Frequency Z Source W Z Load W MHz R jX R jX 820 3.73 2.10 10.41 3.92 840 3.81 2.22 9.61 4.14 860 3.83 2.30 9.00 4.48 880 3.76 2.39 8.55 4.89 900 3.61 2.50 8.24 5.32 920 3.37 2.69 8.02 5.76 940 3.08 2.96 7.89 6.20 960 2.76 3.35 7.84 6.63 980 2.43 3.86 7.85 7.04 1000 2.13 4.47 7.91 7.43

Data Sheet 5 of 8 Rev. 02.1, 2009-02-18 PTF080101M Reference circuit schematic for ƒ = 960 MHz Circuit Assembly Information DUT PTF080101M LDMOS Transistor PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper Microstrip Electrical Characteristics at 960 MHz 1 Dimensions: L x W (mm) Dimensions: L x W (in.) 1Electrical characteristics are rounded. RF_IN RF_OUT 080101m_sch 10V 36pF 5.1pF DUT 10V l4 l5 l6 l7 10pF 36pF 36pF 10µF 1µF VDD l15 C11 C13C12 C15 50V l10 l11 l12 l13 l16 4.5pF C14 l17 3.1pF C16 l14 36pF C10 10µF 35V 36pF 0.1µF R7 C6 5.1KV 5.1K V 1K V 2K V 0.001µF BCP56 1.3K V 1.2K V LM7805 QQ1 0.001µF VDD 0.001µF Reference Circuit

Data Sheet 6 of 8 Rev. 02.1, 2009-02-18 PTF080101M Reference Circuit (cont.) Reference circuit assembly diagram (not to scale)* *Gerber Files for this circuit available on request Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C6, C8, C10, C11, Ceramic capacitor, 36 pF ATC 100B 360 C15 C7 Ceramic capacitor, 5.1 pF ATC 100B 5R1 C9 Ceramic capacitor, 10 pF ATC 100B 100 C12 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPS106K050R0400 C13 Capacitor, 1.0 µF Toshiba C4532XTRZA105M C14 Ceramic capacitor, 4.5 pF ATC 100B 4R5 C16 Ceramic capacitor, 3.1 pF ATC 100B 3R1 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND R3 Chip Resistor 1 k-ohms Digi-Key P1KECT-ND R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND R5, R8 Chip Resistor 10 ohms Digi-Key P10ECT-ND R6, R7 Chip Resistor 5.1 k-ohms Digi-Key P5.1KECT-ND 080101M_C_02 080101m_assy RF_IN RF_OUT LM10 35V+ QQ1 C6 R6 R7 C10 C11 C14 C12 C13 C16 C15 VDD VDD

Data Sheet 7 of 8 Rev. 02.1, 2009-02-18 PTF080101M M PG-RFP-10 0.85 ±0.1 0.09 3 ±0.1 0.42 0.125 6° MAX. H 0.1 A 4.9

0.25 A B C

0.08 M 0.22 ±0.05 0.15 MAX. 1.1 MAX. A C 0.5 10 6 3 ±0.1 B Index marking A B C +0.15 –0.10 +0.08 –0.05 Notes: Unless otherwise specified 1. Dimensions are mm 2. Lead thickness: 0.09 3. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain Package Outline Specifications Package PG-RFP-10 (TSSOP-10 Outline) Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products

Data Sheet 8 of 8 Rev. 02.1, 2009-02-18 PTF080101M Confidential—Limited Distribution Revision History: 2009-02-18 Data Sheet Previous version: 2005-12-16, Data Sheet Page Subjects (major changes since last revision) 4 Add Temperature graph and impedance information. 5 – 6 Add circuit information. all Remove Preliminary status

6 Fixed typing error

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-02-18 Published by Infineon Technologies AG

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com/rfpower ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.