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  • PDF pages: 9

Technical content

Features

  • Asymmetric design
  • Broadband internal matching
  • Typical CW performance, 2690 MHz, 28 V (Doherty configuration, combined output) - Output power @ P 3dB = 30 W - Efficiency = 54% - Gain = 13 dB
  • Typical single-carrier WCDMA performance,

2690 MHz, 28 V, 10 dB PAR

  • Output power = 37.5 dBm avg - Gain = 15.5 dB - Efficiency = 45%
  • Capable of handling 10:1 VSWR @ 32 V, 30 W (CW) output power
  • Integrated ESD protection
  • Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
  • Pb-free and RoHS compliant

Description

The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs. Features include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, IDQ = 85 mA, VGS1 = 1.1 V, POUT = 5.6 W avg, ƒ = 2690 MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 14.5 15.5 — dB Drain Efficiency hD 42 45 — % Adjacent Channel Power Ratio ACPR — –27 –25 dBc -60 -50 -40 -30 -20 -10 28 30 32 34 36 38 40 42 44 Drain Efficiency(%) ACP Up and ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620, 2655, 2690 MHz, 3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

2620 MHz

2655 MHz

2690 MHz

c260302fc_gr1

Data Sheet 2 of 9 Rev. 04, 2016-06-21 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.8 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.6 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 0.085 A VGS 2 2.7 3.5 V (peak) VDS = 28 V, IDQ = 0 A VGS 0.4 1.1 1.8 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (main) (TCASE 70°C, 30 W CW) RqJC 1.5 °C/W (peak) (TCASE 70°C, 30 W CW) RqJC 1.7 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PTAC260302FC V1 R0 PTAC260302FCV1R0XTMA1 H-37248H-4, Ceramic open-cavity, earless Tape & Reel, 50 pcs PTAC260302FC V1 R250 PTAC260302FCV1R250XTMA1 H-37248H-4, Ceramic open-cavity, earless Tape & Reel, 250 pcs

Data Sheet 3 of 9 Rev. 04, 2016-06-21 PTAC260302FC Typical Performance (data taken in a production test fixture) Lead connections for PTAC260302FC Pinout Diagram (top view) Pin Description D1 Drain device 1 (peak) D2 Drain device 2 (main) G1 Gate device 1 (peak) G2 Gate device 2 (main) S (flange) Source H-34284H-4_sl_do_pd_10-10-2012 S G1 G2 D1 D2 MainPeak 2580 2620 2660 2700 2740 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 28 V, IDQ = 85 mA, POUT = 37.5 dBm, 3GPP WCDMA signal, 10 dB PAR Efficiency Gain c260302fc_gr5 -40 -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 2580 2620 2660 2700 2740 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 28 V, IDQ = 85 mA, POUT = 37.5 dBm, 3GPP WCDMA signal, 10 dB PAR Return Loss ACP Up c260302fc_gr6

Data Sheet 4 of 9 Rev. 04, 2016-06-21 30 32 34 36 38 40 42 44 46 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 85 mA, ƒ = 2620, 2655, 2690 MHz Efficiency Gain c260302fc_gr7 Typical Performance (cont.) -60 -40 -20 28 32 36 40 44 Efficency (%) Peak/Average Ratio (dB), Gaun (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth PAR @ 0.01% CCDF Efficiency Gain c260302fc_gr4 -60 -40 -20 28 32 36 40 44 Efficency (%) Peak/Average Ratio (dB), Gaun (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth PAR @ 0.01% CCDF Efficiency Gain c260302fc_gr2 -60 -40 -20 28 32 36 40 44 Efficency (%) Peak/Average Ratio (dB), Gaun (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2655 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth PAR @ 0.01% CCDF Efficiency Gain c260302fc_gr3

Data Sheet 5 of 9 Rev. 04, 2016-06-21 PTAC260302FC 30 32 34 36 38 40 42 44 46 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 85 mA, ƒ = 2620 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency c260302fc_gr8 20 30 32 34 36 38 40 42 44 46 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 85 mA, ƒ = 2655 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency c260302fc_gr9 30 32 34 36 38 40 42 44 46 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 85 mA, ƒ = 2690 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency c260302fc_gr10 -16 -14 -12 -10 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 1950 2150 2350 2550 2750 2950 3150 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 28 V, IDQ = 85 mA IRL Gain c260302fc_gr11 Typical Performance (cont.)

Data Sheet 6 of 9 Rev. 04, 2016-06-21 Load Pull Performance Main Side – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 85 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs W Zl W Gain [dB] POUT dBm POUT [W] PAE % Zl W Gain [dB] POUT [dBm] POUT [W] PAE % Peak Side – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 115 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs W Zl W Gain [dB] POUT dBm POUT [W] PAE % Zl W Gain [dB] POUT [dBm] POUT [W] PAE % Z Source Z Load G D G S D Reference Circuit DUT PTAC2603022FC Test Fixture Part No. LTA/PTAC260302FC PCB Rogers 4350, 0.762 mm [.030"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower)

Data Sheet 7 of 9 Rev. 04, 2016-06-21 PTAC260302FC Component Information Component Description Suggested Manufacturer P/N Input C101, C103 Capacitor, 10 µF , 50 V Panasonic Electronic Components EEV-HD1H100P C102, C104, C105, C106 Chip capacitor, 18 pF ATC ATC100A180JW150XB R101 Resistor, 50 Ohm Anaren C16A50Z4 R102 Resistor, 20 Ohm Panasonic Electronic Components ERJ-8GEYJ200V R103, R104 Resistor, 10 Ohm Panasonic Electronic Components ERJ-3GEYJ100V S1 Hybrid coupler Anaren X3C25P1_05S Output C201, C202 Chip capacitor, 18 pF ATC ATC100A180JW150XB C203, C207 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C204, C205 Chip capacitor, 18 pF ATC ATC100A180JW150XB C206, C208 Capacitor, 220 µF , 35 V Panasonic Electronic Components EEE-FP1V221AP Reference Circuit (cont.) Reference circuit assembly diagram (not to scale) RF_OUT C205 R101 C207 C101 R104 C203 C206 PTAC260302F_IN_03_D RF_IN C106 C104 C102 c 2 6 0 3 0 2 f c _ c d _ 3 - 7 - 1 3 R04350 030 (105)R04350, 030 (61) R102 C201 C202 C208 R103 C103 VDD VDD C204 PTAC260302F_OUT_03_D C105 VGSmain VGSpeak PTAC260302FC

Data Sheet 8 of 9 Rev. 04, 2016-06-21 (Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower) Package Outline Specifications Package H-37248H-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. 19.81±0.20 [.780±.008] 20.57 [.810] S 4X R0.51+0.38 -0.13 [R.020+.015 -.005 ] CL CL 2X 12.70 [.500] 4X 3.81 [.150] 9.78 [.385] (8.89 [.350]) 2X 45° x .64 [.025] (5.08 [.200]) 3.76±0.25 [.148±.010] (1.02 [.040]) 1.57 [.062] SPH 4X 3.49±0.51 [.138±.020] (16.76 [.660]) D

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 9 of 9 Rev. 04, 2016-06-21 Edition 2016-06-21 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTAC260302FC V1

Revision History

Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2012-03-05 Advance all New product, proposed only. 02 2012-11-28 Advance 1,3 Updated package and Package Outline. Updated Pinout Diagram. 03 2014-02-12 Production all 3 – 7 Product released to production. All information updated. Performance graphs, load pull and circuit information added. 04 2016-06-21 Production 1 Updated ESD rating Maximum junction temperature raised to 225°C, updated ordering info.