DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Asymmetrical design - Main : P1dB = 19 W Typ - Peak : P1dB = 60 W Typ
  • Broadband internal matching
  • Wide video bandwidth
  • Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture) - Output power @ P 3dB = 75 W - Efficiency = 48% - Gain @ P3dB = 14 dB
  • Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power
  • Integrated ESD protection : Human Body Model, Class 1B (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V , IDQ = 85 mA, VGS1 = 1.3 V , POUT = 5 W avg, ƒ1 = 2165 MHz, ƒ2 = 2175 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF , 10 MHz carrier spacing Characteristic Symbol Min Typ Max Unit Linear Gain Gps 15 17 — dB Drain Efficiency hD 39 43 — % Adjacent Channel Power Ratio ACPR — –31 –26 dBc 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz, Doherty Fixture Gain Efficiency c210802fc-gc

Data Sheet 2 of 8 Rev. 05.2, 2016-06-17 PTAC210802FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, IDQ = 0 V IGSS — — 1 V On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.6 — W On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.19 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 85 mA VGS 2.30 2.65 3.0 V Operating Gate Voltage (peak) VDS = 28 V, IDQ = 360 mA VGS 2.35 2.70 3.05 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (main, TCASE = 70°C, 19 W CW) RqJC 2.5 °C/W Thermal Resistance (peak, TCASE = 70°C, 60 W CW) RqJC 0.8 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTAC210802FC V1 R0 PTAC210802FCV1R0XTMA1 H-37248-4, earless flange Tape & Reel, 50 pcs PTAC210802FC V1 R250 PTAC210802FCV1R250XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 8 Rev. 05.2, 2016-06-17 Typical Performance (data taken in a production Doherty test fixture) -30 -28 -26 -24 -22 -20 -18 32 34 36 38 40 42 44 46 48 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

2110 IMDL 2110 IMDU

2140 IMDL 2140 IMDU

2170 IMDL 2170 IMDU

-40 -35 -30 -25 -20 -15 -10 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency c210802fc-g2 -40 -35 -30 -25 -20 -15 -10 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) ACPU (dBc) Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz ACPU Efficiency

2110 MHz

2140 MHz

2170 MHz

32 34 36 38 40 42 44 46 48 Gain (dB) OPAR (dB) Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz OPAR Gain c210802fc-g3

Data Sheet 4 of 8 Rev. 05.2, 2016-06-17 PTAC210802FC Typical Performance (cont.) Main Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; VDD = 28 V, 100 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; VDD = 28 V, VGs1 = 1.41 V, Doherty Class C P3dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Load Pull Performance 32 34 36 38 40 42 44 46 48 50 Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V -50 -40 -30 -20 -10 2010 2050 2090 2130 2170 2210 2250 Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, POUT = 9 W, 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz Gain Efficiency RL IMD OPAR c210802fc-g5 Z Source Z Load SG1

Data Sheet 5 of 8 Rev. 05.2, 2016-06-17 Reference Circuit Reference circuit assembly diagram (not to scale)* c 2 1 0 8 0 2 f c _ C D _ 1 0 - 1 6 - 2 0 1 2 PTAC210802F_IN_01_D (62) RO4350, .030 C201 C205 C208C210 C211 C203 C207 C102 C110 R102 C101 C103 C105 C106 C109 R103 C107 C108 R101 R104 C104 R105 R106 RO4350, .030 (63) PTAC210802F OUT_01_D C206 C202 C209 VDD VDD VGSPK VGS RF_IN RF_OUT Reference Circuit Assembly DUT PTAC210802FC Test Fixture Part No. LTA/PTAC210802FC PCB Rogers 4350, 0.762 mm [0.030”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower

Data Sheet 6 of 8 Rev. 05.2, 2016-06-17 PTAC210802FC S D1 D2 G1 G2 MainPeak Reference Circuit (cont.) Components Information Component Description Suggested Supplier P/N Input C101, C102, C103, C109 Chip capacitor, 24 pF ATC ATC800A240JT250XB C104, C110 Capacitor, 100 µF Digi-Key PCE4442TR-ND C105, C108 Chip capacitor, 0.1 µF Digi-Key 399-1267-2-ND C106, C107 Capacitor, 10 µF Digi-Key 587-1818-2-ND R101, R102, R104 Resistor, 10 W Digi-Key P10GCT -ND R103 Resistor, 50 W Anaren C16A50Z4 R105, R106 Resistor, 1000 W Digi-Key P1.0KECT -ND S1 Hybrid coupler Anaren X3C21P1-03S Output C201, C208, C210, C211 Capacitor, 10 µF Digi-Key 587-1818-2-ND C202, C209 Capacitor, 220 µF Digi-Key PCE4444TR-ND C203, C204, C205, C206, Chip capacitor, 24 pF ATC ATC800A240JT250XB C207 Pinout Diagram (top view) Lead connections for PTAC210802FC Pin Description D1 Drain device 1 (Peak) D2 Drain device 2 (Main) G1 Gate device 1 (Peak) G2 Gate device 2 (Main) S Source (flange)

Data Sheet 7 of 8 Rev. 05.2, 2016-06-17 Package Outline Specifications Package H-37248-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

Data Sheet 8 of 8 Rev. 05.2, 2016-06-17 Edition 2016-06-08 Published by Infineon Technologies AG

81726 Munich, Germany

© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTAC210802FC V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-06-11 Advance All Data Sheet reflects advance specification for product development 01.1 2012-06-12 Advance 2 Updated power level measured for thermal data 02 2013-10-17 Production All Data Sheet reflects released product specification 03 2013-12-17 Production 1 Added ESD classification, revised two-carrier WCDMA Specifications Added operating voltage in Maximum Ratings table Updated package outline 04 2014-05-14 Production 2 Revised juntion temperature in Maximum Ratings table 05 2014-10-31 Production 1 Revised ESD classification. Corrected IMD to ACPR in RF Characteristics table. 05.1 2015-12-23 Production 2 DC Chracteristic Table 05.2 2016-06-17 Production 2 Updated ordering code to include R0