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Technical content
Features
Asymmetrical design - Main : P1dB = 19 W Typ - Peak : P1dB = 60 W Typ Broadband internal matching Wide video bandwidth Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fi xture) - Output power @ P 3dB = 75 W - Effi ciency = 48% - Gain @ P3dB = 14 dB Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifi cations (tested in Infi neon Doherty test fi xture) VDD = 28 V, IDQ = 85 mA, VGS1 = 1.3 V, POUT = 5 W avg, ƒ1 = 2165 MHz, ƒ2 = 2175 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF , 10 MHz carrier spacing Characteristic Symbol Min Typ Max Unit Linear Gain G ps 15 17 — dB Drain Effi ciency D 39 43 — % Intermodulation Distortion IMD — –31 –26 dBc 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz, Doherty Fixture Gain Efficiency c210802fc-gc
Data Sheet 2 of 8 Rev. 04, 2014-05-14 PTAC210802FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1 µA V DS = 63 V, VGS = 0 V I DSS — — 10 µA On-State Resistance (main) V GS = 10 V, VDS = 0.1 V R DS(on) — 0.6 — On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V R DS(on) — 0.19 — Operating Gate Voltage (main) V DS = 28 V, IDQ = 0.1 A V GS — 2.6 — V Operating Gate Voltage (peak) V DS = 28 V, IDQ = 0 A V GS — 1.35 — V Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS –6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (main, TCASE = 70°C, 19 W CW) R JC 2.5 °C/W Thermal Resistance (peak, TCASE = 70°C, 60 W CW) R JC 0.8 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping PTAC210802FC V1 PTAC210802FCV1XWSA1 H-37248-4, earless fl ange Tray PTAC210802FC V1 R250 PTAC210802FCV1R250XTMA1 H-37248-4, earless fl ange Tape & Reel, 250 pcs
Data Sheet 3 of 8 Rev. 04, 2014-02-25 Typical Performance (data taken in a production Doherty test fi xture) -30 -28 -26 -24 -22 -20 -18 32 34 36 38 40 42 44 46 48 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
2110 IMDL 2110 IMDU
2140 IMDL 2140 IMDU
2170 IMDL 2170 IMDU
-40 -35 -30 -25 -20 -15 -10 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency c210802fc-g2 -40 -35 -30 -25 -20 -15 -10 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) ACPU (dBc) Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz ACPU Efficiency
2110 MHz
2140 MHz
2170 MHz
32 34 36 38 40 42 44 46 48 Gain (dB) OPAR (dB) Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz OPAR Gain c210802fc-g3
Data Sheet 4 of 8 Rev. 04, 2014-02-25 PTAC210802FC Typical Performance (cont.) Main Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; VDD = 28 V, 100 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [ Zl [ Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [ Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; VDD = 28 V, VGs1 = 1.41 V, Doherty Class C P3dB Max Output Power Max PAE Freq [MHz] Zs [ Zl [ Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [ Gain [dB] POUT [dBm] POUT [W] PAE [%] Load Pull Performance 32 34 36 38 40 42 44 46 48 50 Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V -50 -40 -30 -20 -10 2010 2050 2090 2130 2170 2210 2250 Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, POUT = 9 W, 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz Gain Efficiency RL IMD OPAR c210802fc-g5 Z Source Z Load SG1
Data Sheet 5 of 8 Rev. 04, 2014-05-14 Reference Circuit Reference circuit assembly diagram (not to scale)* c210802fc_CD_10-16-2012 PTAC210802F_IN_01_D (62) RO4350, .030 C201 C205 C208C210 C211 C203 C207 C102 C110 R102 C101 C103 C105 C106 C109 R103 C107 C108 R101 R104 C104 R105 R106 RO4350, .030 (63) PTAC210802F OUT_01_D C206 C202 C209 VDD VDD VGSPK VGS RF_IN RF_OUT Reference Circuit Assembly DUT PTAC210802FC Test Fixture Part No. LTA/PTAC210802FC PCB Rogers 4350, 0.762 mm [0.030”] thick, 2 oz. copper, r = 3.66 Find Gerber fi les for this test fi xture on the Infi neon Web site at http://www.infi neon.com/rfpower
Data Sheet 6 of 8 Rev. 04, 2014-05-14 PTAC210802FC S D1 D2 G1 G2 MainPeak Reference Circuit (cont.) Components Information Component Description Suggested Supplier P/N Input C101, C102, C103, C109 Chip capacitor, 24 pF ATC ATC800A240JT250XB C104, C110 Capacitor, 100 µF Digi-Key PCE4442TR-ND C105, C108 Chip capacitor, 0.1 µF Digi-Key 399-1267-2-ND C106, C107 Capacitor, 10 µF Digi-Key 587-1818-2-ND R101, R102, R104 Resistor, 10 Digi-Key P10GCT -ND R103 Resistor, 50 Anaren C16A50Z4 R105, R106 Resistor, 1000 Digi-Key P1.0KECT -ND S1 Hybrid coupler Anaren X3C21P1-03S Output C201, C208, C210, C211 Capacitor, 10 µF Digi-Key 587-1818-2-ND C202, C209 Capacitor, 220 µF Digi-Key PCE4444TR-ND C203, C204, C205, C206, Chip capacitor, 24 pF ATC ATC800A240JT250XB C207 Pinout Diagram (top view) Lead connections for PTAC210802FC Pin Description D1 Drain device 1 (Peak) D2 Drain device 2 (Main) G1 Gate device 1 (Peak) G2 Gate device 2 (Main) S Source (fl ange)
Data Sheet 7 of 8 Rev. 04, 2014-05-14 Package Outline Specifi cations Package H-37248-4 Find the latest and most complete information about products and packaging at the Infi neon Internet page http://www.infi neon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. >@ /,' )/$1*( >@ 63+ @' ' * * >@6 ;; >;@ >@ +BSRBB >@ $
Data Sheet 8 of 8 Rev. 04, 2014-05-14 Edition 2014-05-14 Published by Infi neon Technologies AG
81726 Munich, Germany
© 2014 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce ( www.infi neon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infi neon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTAC210802FC V1
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-06-11 Advance All Data Sheet refl ects advance specifi cation for product development 01.1 2012-06-12 Advance 2 Updated power level measured for thermal data 02 2013-10-17 Production All Data Sheet refl ects released product specifi cation 03 2013-12-17 Production 1 Added ESD classifi cation, revised two-carrier WCDMA Specifi cations Added operating voltage in Maximum Ratings table Updated package outline 04 2014-05-14 Production 2 Revised juntion temperature in Maximum Ratings table