PTAC210802FC CREE | Alldatasheet

Document overview

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Technical content

Features

  • Asymmetrical design - Main: P1dB = 19 W Typ - Peak: P1dB = 60 W Typ
  • Broadband internal matching
  • Wide video bandwidth
  • Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture) - Output power @ P 3dB = 75 W - Efficiency = 48% - Gain @ P3dB = 14 dB
  • Typical CW pulsed performance, 1880 MHz, 28 V (Doherty fixture) - Output power @ P 1dB = 45 W - Output power @ P3dB = 80 W - Efficiency = 48% - Gain@ P 3dB = 14 dB
  • Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power
  • Integrated ESD protection : Human Body Model, Class 1B (per JESD22-A114)
  • Pb-free and RoHS compliantRF Characteristics Two-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 28 V , IDQ = 85 mA, VGS1 = 1.3 V , POUT = 5 W avg, ƒ1 = 2165 MHz, ƒ2 = 2175 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF , 10 MHz carrier spacing Characteristic Symbol Min Typ Max Unit Gain Gps 15.5 — 17.5 dB Drain Efficiency hD 39 43 — % Intermodulation Distortion IMD — –31 –26 dBc Output PAR at 0.01% probability on CCDF OPAR 8 — — dB 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz, Doherty Fixture Gain Efficiency c210802fc-gc PTAC210802FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 07, 2018-06-25 2PTAC210802FC RF Characteristics (cont.) Two-carrier WCDMA Specifications (not subject to production test, verified by design/characterization in Wolfspeed Doherty test fixture) VDD = 28 V , IDQ = 150 mA, VGS1 = 2 V , POUT = 5 W avg, ƒ1 = 1880 MHz, ƒ2 = 1870 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF , 10 MHz carrier spacing Characteristic Symbol Min Typ Max Unit Gain Gps 17.5 18.3 19.5 dB Drain Efficiency hD 33.5 36 — % Adjacent Channel Power Ratio ACPR — –38 –33 dBc DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, IDQ = 0 V IGSS — — 1 V On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.6 — W On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.19 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 85 mA VGS 2.30 2.65 3.0 V (peak) VDS = 28 V, IDQ = 360 mA VGS 2.35 2.70 3.05 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above.

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 07, 2018-06-25 3PTAC210802FC Typical Performance (data taken in a Doherty test fixture) Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance (main) (TCASE = 70 °C, 19 W (CW), VDD = 28 V, IDQ = 85 mA RqJC 2.5 °C/W Thermal Resistance (peak) CASE = 70 °C, 60 W (CW), VDD = 28 V, IDQ = 360 mA RqJC 0.8 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTAC210802FC V1 R0 PTAC210802FC-V1-R0 H-37248-4, earless flange Tape & Reel, 50 pcs PTAC210802FC V1 R250 PTAC210802FC-V1-R250 H-37248-4, earless flange Tape & Reel, 250 pcs PTAC210802FC V1 S250 PTAC210802FC-V1-S250 H-37248-4, earless flange Tape & Reel, 250 pcs 32 33 34 35 36 37 38 39 40 41 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 150 mA, VGS1 = 2 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz Gain Efficiency c210802fc-1880_g1_rev01 0 30 32 34 36 38 40 42 44 46 48 Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW VDD = 28 V, IDQ = 150 mA, VGS1 = 2 V, ƒ = 1880 MHz Efficiency Gain c210802fc-1880_g2_rev01

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 07, 2018-06-25 4PTAC210802FC Typical Performance (cont.) -40 -35 -30 -25 -20 -15 -10 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) ACPU (dBc) Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz ACPU Efficiency

2110 MHz

2140 MHz

2170 MHz

32 34 36 38 40 42 44 46 48 Gain (dB) OPAR (dB) Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz OPAR Gain c210802fc-g3 -30 -28 -26 -24 -22 -20 -18 32 34 36 38 40 42 44 46 48 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

2110 IMDL 2110 IMDU

2140 IMDL 2140 IMDU

2170 IMDL 2170 IMDU

-40 -35 -30 -25 -20 -15 -10 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency c210802fc-g2

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 07, 2018-06-25 5PTAC210802FC 32 34 36 38 40 42 44 46 48 50 Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V -50 -40 -30 -20 -10 2010 2050 2090 2130 2170 2210 2250 Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, POUT = 9 W, 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz Gain Efficiency RL IMD OPAR c210802fc-g5 Main Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; VDD = 28 V, 100 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; VDD = 28 V, VGs1 = 1.41 V, Doherty Class C P3dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Load Pull Performance Z Source Z Load SG1 Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 07, 2018-06-25 6PTAC210802FC Reference Circuit Reference circuit assembly diagram (not to scale) Reference Circuit Assembly DUT PTAC210802FC Test Fixture Part No. LTA/PTAC210802FC PCB Rogers 4350, 0.762 mm [0.030”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF c 2 1 0 8 0 2 f c _ C D _ 0 2 - 0 8 - 2 0 1 8 PTAC210802F_IN_01_D (62) RO4350, .030 C201 C205 C208C210 C211 C203 C207 C102 C110 R102 C101 C103 C105 C106 C109 R103 C107 C108 R101 R104 C104 R105 R106 RO4350, .030 (63) PTAC210802F OUT_01_D C206 C202 C209 VDD VDD VGSPK VGS RF_IN RF_OUT C204

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 07, 2018-06-25 7PTAC210802FC Reference Circuit (cont.) Components Information Component Description Supplier P/N Input C101, C102, C103, C109 Chip capacitor, 24 pF ATC ATC800A240JT250XB C104, C110 Capacitor, 100 µF Panasonic Electronic Components EEE-FP1V101AP C105, C108 Chip capacitor, 0.1 µF Kemet C1210C104K5RACTU C106, C107 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102, R104 Resistor, 10 W Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 W Anaren C16A50Z4 R105, R106 Resistor, 1000 W Panasonic Electronic Components ERJ-8GEYJ102V S1 Hybrid coupler Anaren X3C21P1-03S Output C201, C208, C210, C211 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C202, C209 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP C203, C204, C205, C206, Chip capacitor, 24 pF ATC ATC800A240JT250XB C207 S D1 D2 G1 G2 MainPeak Pinout Diagram (top view) Lead connections for PTAC210802FC Pin Description D1 Drain device 1 (Peak) D2 Drain device 2 (Main) G1 Gate device 1 (Peak) G2 Gate device 2 (Main) S Source (flange)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 07, 2018-06-25 8PTAC210802FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

www.wolfspeed.comRev. 07, 2018-06-25 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTAC210802FC

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-06-11 Advance All Data Sheet reflects advance specification for product development 01.1 2012-06-12 Advance 2 Updated power level measured for thermal data 02 2013-10-17 Production All Data Sheet reflects released product specification 03 2013-12-17 Production 1 Added ESD classification, revised two-carrier WCDMA Specifications Added operating voltage in Maximum Ratings table Updated package outline 04 2014-05-14 Production 2 Revised juntion temperature in Maximum Ratings table 05 2014-10-31 Production 1 Revised ESD classification. Corrected IMD to ACPR in RF Characteristics table. 05.1 2015-12-23 Production 2 DC Chracteristic Table 05.2 2016-06-17 Production 2 Updated ordering code to include R0 06 2017-04-07 Production 1 Updated RF Characteristics table to include OPAR 06.1 2018-02-08 Production 1, 3 Updated RF Characteristics table and ordering information 07 2018-06-25 Production All Converted to Wolfspeed Data Sheet