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Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014 © 2014 Prodrive Technologies B.V. 1 of 12 PT62SCMD12 Dual 1200V SIC MOSFET driver Features: Designed for driving CREE CAS300M12BM2 SIC MOSFETS modules Low jitter: typical 1ns +20V/-6V gate driving Over-current protected Switching frequencies up to 125kHz Adjustable dead and blanking time Dead-time generator Output currents up to +/- 20A Under and over voltage lock out High dV/dt immunity No optocouplers RS422 input interface Large power supply range, from 15V up to 24V Driver ID Associated SIC MOSFET module PT62SCMD12 R01 CAS300M12BM2 Overview: X10 VIN+,HIGH VIN-,HIGH VIN+,LOW VIN-,LOW GND STATUS VPOWER DIFFERE NTIAL RECE IVER DIFFERE NTIAL RECE IVER DEAD TIME GENERATOR STATUS CONTROLLER CONTROLLER BOARD SUPPLIES MODULATOR HIGH SID E MODULATOR LOW SIDE FAULT DETECTION CONTROLLER CONTROLLER DE-MODULATOR ISOLATED SUPPLY STATUS CONTROLLER DE-MODULATOR STATUS CONTROLLER CONTROLLER X22 X21 X32 X31 VGAT E,HI GH GNDHI GH VGAT E,LO W GNDLO W E NABLE X33 VDRAIN,LO W X23 VDRAIN,HI GH E NABLE OCP OCP VOLTAGE MONITOR R901 R902 GND Dead time setting VD,LO W VD,HI GH VOLTAGE MONITOR CBLA NK ROC P CBLA NK ROC P OCP settings OCP settings RGAT E,OF F VOLTAGE MONITOR RESET GNDLO W GNDHI GH CGS CGS RGAT E,ON RGAT E,ON RGAT E,OF F SECONDARY LOW SIDE SECONDARY HIGH SIDE PRIMARY SIDE
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014 © 2014 Prodrive Technologies B.V. 2 of 12 1. Electrical characteristics 1.1. Operating range Within the operating range the driver operates as described in the functional description. Unless otherwise noted all voltages refer to GND. Table 1-1, Operating range Item Description Min Typ Max Unit Remarks VPOWER Supply voltage 14.5 - 26 [V] - VD,HIGH VD,LOW Inputs OCP 0 - 1700 [V] Referred to respectively GNDHIGH and GNDLOW |VGND,HIGH/dt| |VGND,LOW/dt| Maximum voltage transients @ the secondary ground - - 100 kV/µs - TAMB Operating temperature range, no airflow -40 - 85 [°C ] No condensation 1.2. Electrical characteristics Table 1-2, Input power Item Description Min Typ Max Unit Remarks PIN,OPERATIONAL Power consumption PT62SCMD121) - 12 - [W] fSWITCH=100kHz PIN,IDLE Idle Power consumption PT62SCMD12 - 3.5 4 [W] - Note1) In combination with module CAS300M12BM2 Table 1-3, Differential RS422 inputs Item Description Min Typ Max Unit Remarks VINX,X Single ended input level -7 - 12 [V] - ΔVIN,X Differential input high-threshold voltage 0.7 - - [V] ΔVIN,X= ΔVIN+,X - ΔVIN-,X Differential input low-threshold voltage - - -0.2 [V] RID Differential input impedance 120 [Ohm] - Table 1-4, Logic output Item Description Min Typ Max Unit Remarks VSTATUS = OK Status output voltage when the status of the driver is OK 4.7 - - [V] - VSTATUS = NOK Status output voltage when the status of the driver is NOK - - 0.8 [V] - Table 1-5, Gate drivers Item Description Min Typ Max Unit Remarks VGATE,HIGH = HIGH VGATE,LOW = HIGH High level output voltage, VPOWER=24V 18 20 22 [V] Referred to respectively GNDHIGH and GNDLOW VGATE,HIGH = LOW VGATE,LOW = LOW Low level output voltage, VPOWER=24V -8 -6 -4 [V] VGATE,HIGH = HIGH VGATE,LOW = HIGH Peak output current capability1) 20 - - [A] - Note1) With RGATE,ON = RGATE,OFF = 0Ohm
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014 © 2014 Prodrive Technologies B.V. 4 of 12 1.3. Protections 1.3.1. Under Voltage Lock Out (UVLO) Both secondary sides are equipped with an UVLO indirectly monitoring the gate voltages. Table 1-8, UVLO Item Description Min Typ Max Unit Remarks VUVLO,SEC Secondary side under voltage lock out 16 18 - [V] Only positive voltage is monitored The primary side is equipped with an UVLO and an OVLO (Over Voltage Lock Out) monitoring an internally generated supply voltage. 1.3.2. Dead-time generator The driver has an on-board dead-time generator which overrules the input signals when the dead- time of the applied PWM signals (tDEAD,IN) becomes larger than the set dead-time (tDEAD,PROG). Note that when the dead-time generator has to intervene, the jitter increases to a maximum of 10ns. The dead time is by default set at 500ns, but can be changed by modifying R901 and R902. See chapter 4 for application information. Table 1-9 Dead time settings R901 R902 tDEAD unit Remarks not assembled not assembled 1000 [ns] - not assembled assembled 500 [ns] Default setting assembled not assembled 250 [ns] - assembled assembled - [ns] Dead time disabled 1.3.3. Over Current Protection (OCP) The driver features VDS monitoring for protecting the modules against overcurrent. Both the blanking time (time the monitor is not-active when switching on), as the VDS level (proportional with IDS) is user-adjustable. Table 1-10 VDS monitoring Item Description Min Typ Max Unit Remarks VDS,TRIP Default VDS trip level PT62SCMD12 - 4 - [V] See Figure 1-6 tBLANKING Default Blanking time 0.75 1 1.25 [us] tSHUTDOWN Delay between a detected over current and a shutdown of the driver - - 1 [us] tSTATUS Delay between an over current protection and a low going STATUS at the primary side. - - 100 [us]
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014 © 2014 Prodrive Technologies B.V. 6 of 12 1.5. Electrical isolation Table 1-13 Grade of insulation1) Circuit PRIMARY SECUNDARY_LOW SECUNDARY_HIGH PRIMARY - BASIC BASIC SECUNDARY_LOW BASIC - BASIC SECUNDARY_HIGH BASIC BASIC - Note1) Based on NEN-EN-IEC 60950 Table 1-14 Clearance distances Circuit PRIMARY SECUNDARY_LOW SECUNDARY_HIGH PRIMARY - 11.6mm 11.6mm SECUNDARY_LOW 11.6mm - 6.2mm SECUNDARY_HIGH 11.6mm 6.2mm - Table 1-15 Creepage distances Circuit PRIMARY SECUNDARY_LOW SECUNDARY_HIGH PRIMARY - 11.6mm 11.6mm SECUNDARY_LOW 11.6mm - 23.2mm SECUNDARY_HIGH 11.6mm 23.2mm - A safety test is applied at every driver produced, used test parameters are listed below. Table 1-16 Safety test Item Description Min Typ Max Unit Remarks VTEST Test voltage primary to secondary side - 5 - [kVDC] 1s, non- repetitive
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014 © 2014 Prodrive Technologies B.V. 7 of 12 2. Electrical interfaces 2.1. MOSFET terminals Table 2-1 MOSFET terminals Terminal ID Mnemonic driver Pinning @ MOSFET module Connector style X21 VGATE,HIGH 4 Faston 2.8mm x 0.5mm receptacle X22 GNDHIGH 5 X23 VDRAIN,HIGH 3 X31 GNDLOW 7 X32 VGATE,LOW 6 X33 VDRAIN,LOW 1 2.2. Input connector Table 2-2 Input connector Connector ID Pin# Mnemonic driver Interface X10 1 VIN+,HIGH 2 x 4pin boxed header, angled, lockable & keyed. 2.54mm pitch
2 VIN-,HIGH
3 RESET
4 GND
5 VIN+,LOW
6 VIN-,LOW
7 STATUS
8 VPOWER
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014 © 2014 Prodrive Technologies B.V. 9 of 12 4. Application notes 4.1. Input connection. Connector For the input connector (X10) a boxed header from Wurth is applied (612 008 217 21), a possible mating wire connector is for example the 71600-608LF from FCI. Wiring For increasing the immunity of the PWM input signals the driver is equipped with differential inputs. For reaching maximum performance the differential pairs should be physically kept close to each other by using for example a flat cable with twisted differential pairs. Although the differential concept already gives additional immunity it is still recommended to keep the PWM signal lines away from conductors carrying large currents. Shielding of the wires will increase the immunity further. 4.2. Input power. The ramp-up of the supply voltage during start-up should be smooth and no dips should occur. Figure 4-1, Behavior input voltage during start-up 4.3. Disabling OCP If it, for any reason, is desired to disable the OCP then this can be achieved by interconnecting: X31 with X33 and X22 with X23 Note that when X23 and/or X33 are not connected the driver will always enter its error stated when PWM is applied. VPOWER VPOWER PREFERRED NOT-PREFERRED
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014 © 2014 Prodrive Technologies B.V. 10 of 12 4.4. Modifying dead-time and OCP settings In this section information is given for modifying dead time, VDS trip level and/or blanking time. Modifying dead-time The dead time can be programmed by assembling the resistors R901 and R902 (0603 package). Values of the resistors should be 220Ohm or lower. The possible settings are listed below. Figure 4-2, Location R901 and R902
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014 © 2014 Prodrive Technologies B.V. 11 of 12 Modifying blanking time The blanking time can be modified by changing CBLANK (0603 package). Settings are listed below, locations are shown in Figure 4-2. For CBLANK a capacitor with NP0 dielectric is recommended, the voltage rating should be at least 25V. Table 4-1 tBLANKING setting CBLANK t,BLANKING unit Remarks 56pF 0.5 [us] - 120pF 1 [us] Default setting 390pF 3 [us] - 560pF 5 [us] - Modifying VDS,TRIP setting The VDS trip-level can be modified by changing ROCP (1206 package). Settings are listed below, locations are shown in Figure 4-3. Table 4-2 VDS,TRIP setting PT62SCMD12 ROCP Unit VDS,TRIP unit Remarks 1550 [Ohm] 1 [V] - 1000 [Ohm] 2 [V] - 560 [Ohm] 3 [V] - 47 [Ohm] 4 [V] Default setting PT62SCMD12
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014 © 2014 Prodrive Technologies B.V. 12 of 12 Figure 4-3, Location ROCP and RBLANK IMPORTANT INFORMATION AND DISCLAIMER This datasheet is made available for your convenience only and may be updated without notice. Prodrive Technologies makes no representation or warranty as to the accuracy of the data provided. Products are only sold subject to Prodrive Technologies terms and conditions of sale. Products are not intended for military, space, aircraft or life support applications unless explicitly agreed in writing otherwise. Your use of these data remains solely your responsibility. In no event shall Prodrive Technologies liability arising out of this datasheet exceed the purchase price paid for the products concerned. For more technical or commercial information visit: http://www.prodrive-technologies.com or send an email to power@prodrive-technologies.com © 2014 Prodrive Technologies B.V. All rights reserved. Reproduction is prohibited without prior written consent.