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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version.
Description
․PT534-6B is a high speed and high sensitive NPN silicon phototransistor molded in a standard 5 mm package. Due to its black epoxy the device is sensitive to visible and near infrared radiation..
Applications
․Infrared applied system ․Camera ․Printer ․Cockroach catcher
LifecyclePhase: Revision : 3 Expired Period: Forever Release Date:2013-06-04 10:05:52.0 DATASHEET 5mm Silicon Phototransistor PT534-6B Device Selection Guide Chip Materials Lens Color Silicon Black Absolute Maximum Ratings (Ta=25Ċ) Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO 30 V Emitter-Collector-Voltage VECO 5 V Collector Current IC 20 mA Operating Temperature Topr -25 ~ +85 °C Storage Temperature Tstg -40 ~ +100 °C Lead Soldering Temperature Tsol 260Ċ °C Power Dissipation at (or below) 25ĊFree Air Temperature Pc 75 mW Notes: *1:Soldering timeÙ10 seconds.
LifecyclePhase: Revision : 3 Expired Period: Forever Release Date:2013-06-04 10:05:52.0 DATASHEET 5mm Silicon Phototransistor PT534-6B Electro-Optical Characteristics (Ta=25Ċ) Parameter Symbol Min. Typ. Max. Unit Condition Collector – Emitter Breakdown Voltage BVCEO 30 ----- ----- V IC=100μA Ee=0mW/cm2 Emitter-Collector Breakdown Voltage BVECO 5 ----- ----- V IE=100μA Ee=0mW/cm2 Collector-Emitter Saturation Voltage VCE(sat) ----- ----- 0.4 V IC=2mA Ee=1mW/cm2 Rise Time tr ----- 15 ----- Fall Time tf ----- 15 ----- μS VCE=5V IC=1mA RL=1000Ω Collector Dark Current ICEO ----- ----- 100 nA Ee=0mW/cm2 VCE=20V On State Collector Current IC(on) 0.7 1.2 ----- mA Ee=1mW/cm2 VCE=5V λp=940nm Rang Of Spectral Bandwidth λ0.5 800 ----- 1100 nm ---- Wavelength of Peak Sensitivity λP ----- 940 ----- nm ----
LifecyclePhase: Revision : 3 Expired Period: Forever Release Date:2013-06-04 10:05:52.0 DATASHEET 5mm Silicon Phototransistor PT534-6B -25 500 25 8575 100 100 4010 20 30 6050 70 100 140 120 160 1100800 700 0.2 0.4 900 1000 1300 Ta=25 0.6 0.8 1.0 C 0.5 0.01 1 1.5 0.1 100 C Typical Electro-Optical Characteristics Curves Collector Power Dissipation vs. Ambient Temperature Spectral Sensitivity Relative Collector Current vs. Ambient Temperature Collector Current vs. Irradiance
LifecyclePhase: Revision : 3 Expired Period: Forever Release Date:2013-06-04 10:05:52.0 DATASHEET 5mm Silicon Phototransistor PT534-6B 25 50 75 100 2 3 Collector Dark Current vs. Ambient Temperature Collector Current vs. Collector-Emitter Voltage
LifecyclePhase: Revision : 3 Expired Period: Forever Release Date:2013-06-04 10:05:52.0 DATASHEET 5mm Silicon Phototransistor PT534-6B Package Dimension Note: 1.All dimensions are in millimeters 2.Tolerances unless dimensions Ô0.1mm
LifecyclePhase: Revision : 3 Expired Period: Forever Release Date:2013-06-04 10:05:52.0 DATASHEET 5mm Silicon Phototransistor PT534-6B Label Form Specification CPN: Customer’ s Product Number‧ P/N: Product Number‧ QTY: Packing Quantity‧ CAT: Luminous Intensity Rank‧ HUE: Dom. Wavelength Rank‧ RE‧ F: Forward Voltage Rank LOT No: Lot Number‧ ‧X: Month Reference: Identify Label Number‧ Packing Specification ■ Anti-electrostatic bag ■ Inner Carton ■ Outside Carton ■ Packing Quantity 1. 500 PCS/1 Bag, 5 Bags/1 Inner Carton 2. 10 Inner Cartons/1 Outside Carton RoHS Pb CPN : P N : XXXXXXXXXXXXX XXXXXXXXXXXXX QTY : XXX LOT NO : XXXXXXXXXX Reference : XXXXXXXX CAT : XXX HUE : XXX REF : XXX EVERLIGHT
LifecyclePhase: Revision : 3 Expired Period: Forever Release Date:2013-06-04 10:05:52.0 DATASHEET 5mm Silicon Phototransistor PT534-6B Prehead laminar wave Fluxing Notes 1. Lead Forming During lead formation, the leads should be bent at a point at least 3mm from the base of the epoxy bulb. Lead forming should be done before soldering. Avoid stressing the LED package during leads forming. The stress to the base may damage the LED’ s characteristics or it may break the LEDs. Cut the LED lead frames at room temperature. Cutting the lead frames at high temperatures may cause failure of the LEDs. When mounting the LEDs onto a PCB, the PCB holes must be aligned exactly with the lead position of the LED. If the LEDs are mounted with stress at the leads, it causes deterioration of the epoxy resin and this will degrade the LEDs. 2. Storage The LEDs should be stored at 30°C or less and 70%RH or less after being shipped from Everlight and the storage life limits are 3 months. If the LEDs are stored for 3 months or more, they can be stored for a year in a sealed container with a nitrogen atmosphere and moisture absorbent material. Please avoid rapid transitions in ambient temperature, especially, in high humidity environments where condensation can occur. 3. Soldering Careful attention should be paid during soldering. When soldering, leave more then 3mm from solder joint to epoxy bulb, and soldering beyond the base of the tie bar is recommended. Recommended soldering conditions: Hand Soldering DIP Soldering Soldering time 3 sec Max. Bath temp. & time 260 Max., 5 sec Max Distance 3mm Min.(From solder joint to epoxy bulb) Distance 3mm Min. (From solder joint to epoxy bulb) Recommended soldering profile Avoiding applying any stress to the lead frame while the LEDs are at high temperature particularly when soldering. Dip and hand soldering should not be done more than one time
LifecyclePhase: Revision : 3 Expired Period: Forever Release Date:2013-06-04 10:05:52.0 DATASHEET 5mm Silicon Phototransistor PT534-6B After soldering the LEDs, the epoxy bulb should be protected from mechanical shock or vibration until the LEDs return to room temperature. A rapid-rate process is not recommended for cooling the LEDs down from the peak temperature. Although the recommended soldering conditions are specified in the above table, dip or hand soldering at the lowest possible temperature is desirable for the LEDs. Wave soldering parameter must be set and maintain according to recommended temperature and dwell time in the solder wave. 4. Cleaning When necessary, cleaning should occur only with isopropyl alcohol at room temperature for a duration of no more than one minute. Dry at room temperature before use. Do not clean the LEDs by the ultrasonic. When it is absolutely necessary, the influence of ultrasonic cleaning on the LEDs depends on factors such as ultrasonic power and the assembled condition. Ultrasonic cleaning shall be pre-qualified to ensure this will not cause damage to the LED 5. Heat Management Heat management of LEDs must be taken into consideration during the design stage of LED application. The current should be de-rated appropriately by referring to the de-rating curve found in each product specification. The temperature surrounding the LED in the application should be controlled. Please refer to the data sheet de-rating curve. 6. ESD (Electrostatic Discharge) Electrostatic discharge (ESD) or surge current (EOS) can damage LEDs. An ESD wrist strap, ESD shoe strap or antistatic gloves must be worn whenever handling LEDs. All devices, equipment and machinery must be properly grounded. Use ion blower to neutralize the static charge which might have built up on surface of the LEDs plastic lens as a result of friction between LEDs during storage and handing. 7. Other Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’ t reproduce or cause anyone to reproduce them without EVERLIGHT’ s consent.