PT511-2 ROITHNER | Alldatasheet
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15.11.2010 PT511-2 1 of 1
PT511-2 is an InGaAs pin structure based photodiode on InP by MOCVD method and planar diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with flat glass lens. Absolute Maximum Ratings Item Symbol Value Unit Reverse Voltage UR 30 V Reverse current IR 1000 µA Forward current IF 5 mA Power Dissipation PD 100 mW Operating Temperature Topr -40 … +85 °C Storage Temperature Tstg -40 … +125 °C Soldering Temperature * Tsol 260 °C * must be completed within 10 seconds Specifications Item Value Unit Wavelength Range 850 .. 1650 nm Sensitive Area Ø 300 µm Unsaturated Power 10 dBm Responsivity λ=1300 nm 0.85 A/W Capacitance (-5 V) 2 pF Dark Current (-5 V) ≤1 nA Rise/Fall time 3 ns Saturation Power >10 dB D r a w i n g ( m m ) B o t t o m V i e w