PSW3C95 POWERSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Planar glasspassivated chips
- Package with metal base plate
Applications
- Solid state relays Advantages
- Space and weight savings
- Improved temperature and power cycling
- High power density
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions Symbol Test Conditions Characteristic Value ID, IR TVJ = TVJM, VR = VRRM, VD = VDRM ≤ 5 mA VT IT = 150A, TVJ = 25°C ≤ 1.57 V VTO For power-loss calculations only (TVJ = TVJM) 0.85 V rT 4.8 mΩ VGT VD = 6V T VJ = 25°C ≤ 1.0 V T VJ = -40°C ≤ 1.6 V IGT VD = 6V T VJ = 25°C ≤ 100 mA T VJ = -40°C ≤ 150 mA VGD TVJ = TVJM V D = 2/3 VDRM ≤ 0.2 V IGD TVJ = TVJM V D = 2/3 VDRM ≤ 5 mA IL TVJ = 25°C, tP = 10µs ≤ 200 mA IG = 0.3A, diG/dt = 0.3A/µs IH TVJ = 25°C, VD = 6V, RGK = ∞ ≤ 150 mA tgd TVJ = 25°C, VD = ½ VDRM ≤ 2 µs IG = 0.3A, diG/dt = 0.3A/µs tq TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V 150 µs di/dt = -10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM RthJC per thyristor; sine 180°el 0.66 K/W per module 0.11 K/W a Max. allowable acceleration 50 m/s 2 Package, stil and outline Dimensions in mm (1mm = 0.0394“)