PSDT74 POWERSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Package with DCB ceramic base plate
- Isolation voltage 3000 V ∼
- Planar glass passivated chips
- Low forward voltage drop
- Leads suitable for PC board soldering
- UL Release applied
Applications
- Supplies for DC power equipment
- Imput rectifier for PWM inverter
- Battery DC power supplies
- Field supply for DC motors Advantages
- Easy to mount with four screws
- Space and weight savings
- Improved temperature and power cycling capability
- High power density
- Small and light weight ECO-PACTM 3
POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions Package style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value ID, I R TVJ = 125°C, V R = VRRM, VD=VDRM ≤ 5m A VT IT = 80 A, T VJ = 25 °C ≤ 1.64 V VTO For power-loss calculations only 0.85 V rT 11 m Ω VGT VD=6V T VJ= 25°C ≤ 1.5 V TVJ=-40°C ≤ 1.6 V IGT VD=6V T VJ= 25°C ≤ 100 mA TVJ=-40°C ≤ 200 mA VGD TVJ= 125°C V D=2/3VDRM ≤ 0.2 V IGD TVJ= 125°C V D=2/3VDRM ≤ 5m A IL TVJ= 25°C, tP=10µs, VD=6V ≤ 450 mA IG=0.45A, diG/dt=0.45A/µs IH TVJ= 25°C, VD=6V, RGK= ∞≤ 200 mA tgd TVJ= 25°C, VD=1/2VDRM ≤ 2µ s IG=0.45A, diG/dt=0.45A/µs tq TVJ= TVJM; IT=20A; tp=200µs;di/dt=-10A/µs 250 µs VR=100V; dv/dt=15V/µs; VD=2/3VDRM RthJC per thyristor; DC 0.9 K/W per module 0.15 K/W RthJH per thyristor; DC 1.1 K/W per module 0.183 K/W ds Creepage distance on surface (Pin to heatsink) 11.2 m m dA Strike distance in air (Pin to heatsink) 11.2 m m a Max. allowable acceleration 50 m/s²