PSDT110 POWERSEM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Features

  • Package with screw terminals
  • Isolation voltage 3000 V∼
  • Planar glasspassivated chips
  • Low forward voltage drop
  • UL registered, E 148688

Applications

  • Heat and temperature control for industrial furnaces and chemical processes
  • Lighting control
  • Motor control
  • Power converter Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density Package, style and outline Dimensions in mm (1mm = 0.0394“)

POWERSEM GmbH, Walpersdorfer Str. 53  2003 POWERSEM reserves the right to change limits, test conditions and dimensions

91126 D- Schwabach

Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 Symbol Test Conditions Characteristic Value ID, IR TVJ = TVJM, VR = VRRM, VD = VDRM ≤ 5 mA VT IT = 200A, TVJ = 25°C ≤ 1.75 V VTO For power-loss calculations only (TVJ = TVJM) 0.85 V rT 6 mΩ VGT VD = 6V T VJ = 25°C ≤ 1.5 V T VJ = -40°C ≤ 1.6 V IGT VD = 6V T VJ = 25°C ≤ 100 mA T VJ = -40°C ≤ 200 mA VGD TVJ = TVJM V D = 2/3 VDRM ≤ 0.2 V IGD TVJ = TVJM V D = 2/3 VDRM ≤ 5 mA IL TVJ = 25°C, tP = 30µs ≤ 450 mA IG = 0.3A, diG/dt = 0.3A/µs IH TVJ = 25°C, VD = 6V, RGK = ∞ ≤ 200 mA tgd TVJ = 25°C, VD = ½ VDRM ≤ 2 µs IG = 0.3A, diG/dt = 0.3A/µs tq TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V 150 µs -di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM RthJC per thyristor; sine 180°el 0.65 K/W per module 0.108 K/W RthJK per thyristor; sine 180° el 0.8 K/W per module 0.133 K/W dS Creeping distance on surface 10.0 mm dA Creeping distance in air 9.4 mm a Max. allowable acceleration 50 m/s 2 0.5 1 1.5 2 100 150 200 250 300 V [V] F IF [A] 1:T = 125° VJ 2:T = 25° VJ C C 1 2 100 100 I [mA] G 10 1000 t gd us T =25°C VJ 0.4 0.6 0.8 1.2 1.4 1.6 10 0 10 1 10 2 10 3t[ms] I (A) TSM TVJ=45°C TVJ=150°C 1150 1000 I T(OV)

0 V RRM

1 V RRM

Fig. 1 Forward current vs. voltage drop per diode or thyristor Fig. 2 Gate trigger delay time Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration

POWERSEM GmbH, Walpersdorfer Str. 53  2003 POWERSEM reserves the right to change limits, test conditions and dimensions Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 0.1 10 10 10 10 1001234 mA V VG IG 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W Fig.4 Gate trigger characteristic 50 100 150 200 100 120 DC sin.180° rec.120° rec.60° rec.30° T (°C) C I TAV [A] Fig.5 Maximum forward current at case temperature Fig.6 Transient thermal impedance per thyristor or diode (calculated) 0.01 0.1 1 10 0.2 0.4 0.6 0.8 K/W Zth t[s] Z thJK Z thJC Fig. 7 Power dissipation vs. direct output current and ambient temperature 100 50 100 150 200 250 300 350 400 100 105 110 115 120 125 TC DC sin.180° rec.120° rec.60° rec.30° 1.14 0.52 0.31 0.2 0.14 0.08 = RTHCA [K/W] ITAVM [A] Tamb [K] 0 50 100 150 [W] PVTOT PSDT 110