PSW1C50

PSW1C50 POWERSEM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

Features

• Planar glass passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering

Applications

• Solid state relays Advantages
• Space and weight savings
• Improved temperature and power cycling capability
• High power density
• Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Subassembly  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Data according to IEC 60747 refer to a single thyristor unless otherwise stated Symbol Test Conditions Maximum Ratings VRSM V RRM Type VDSM VDRM (V) (V) 900 800 PSW1C 50/08 1300 1200 PSW1C 50/12 1500 1400 PSW1C 50/14 1700 1600 PSW1C 50/16 IRMS TC = 85°C; 50-400Hz (per phase) 50 A ITRMS TVJ = TVJM 36 A ITAVM TC = 85 °C; 180° sine 23 A ITSM TVJ = 45 °C t = 10 ms (50 Hz), sine 520 A VR = 0 t = 8.3 ms (60 Hz), sine 570 A TVJ = 125 °C t = 10 ms (50 Hz), sine 460 A VR = 0 t = 8.3 ms (60 Hz), sine 500 A ∫∫∫∫∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 1350 A²s VR = 0 t = 8.3 ms (60 Hz), sine 1350 A²s TVJ = 125 °C t = 10 ms (50 Hz), sine 1050 A²s VR = 0 t = 8.3 ms (60 Hz), sine 1030 A²s (di/dt)cr TVJ = 125 °C repetitive, I T = 150 A 150 A/µs f=50Hz, tP=200µs VD=2/3VDRM IG=0.3 A non repetitive,I T = ITAVM 500 A/µs diG/dt=0.5A/µs (dv/dt)cr TVJ = 125 °C V D=2/3VDRM 1000 V/µs RGK= ∞ , method 1 (linear voltage rise) PGM TVJ = 125 °C t P=30µs ≤ 10 W IT =ITAVM tP=300µs ≤ 5W PGAVM 0.5 W VRGM 10 V TVJM 125 °C Tstg -40... + 125 °C Weight typ. 8 g

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Package style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value ID,IR TVJ = 125°C, V R = VRRM, VD=VDRM ≤ 5m A VT IT = 80 A, T VJ = 25 °C ≤ 1.65 V VTO For power-loss calculations only 0.85 V rT 11 m Ω VGT VD=6V T VJ= 25°C ≤ 1.0 V TVJ=-40°C ≤ 1.6 V IGT VD=6V T VJ= 25°C ≤ 100 mA TVJ=-40°C ≤ 150 mA VGD TVJ= 125°C V D=2/3VDRM ≤ 0.2 V IGD TVJ= 125°C V D=2/3VDRM ≤ 5m A IL TVJ= 25°C, tP=10µs, VD=6V ≤ 200 mA IG=0.3A, diG/dt=0.3A/µs IH TVJ= 25°C, VD=6V, RGK= ∞≤ 150 mA tgd TVJ= 25°C, VD=1/2VDRM ≤ 2µ s IG=0.3A, diG/dt=0.3A/µs tq TVJ= TVJM; IT=20A; tp=200µs;di/dt=-10A/µs typ. 150 µs VR=100V; dv/dt=15V/µs; VD=2/3VDRM RthJC per Thyristor; DC 1.1 K/W per module 0.55 K/W a Max. allowable acceleration 50 m/s²