PSW1C112 POWERSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Planar glass passivated chips
- Low forward voltage drop
- Leads suitable for PC board soldering
Applications
- Solid state relays Advantages
- Space and weight savings
- Improved temperature and power cycling capability
- High power density
- Small and light weight
POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions Package style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value ID,IR TVJ = 125°C, V R = VRRM, VD=VDRM ≤ 5m A VT IT = 150 A, T VJ = 25 °C ≤ 1.57 V VTO For power-loss calculations only 0.85 V rT 5.6 m Ω VGT VD=6V T VJ= 25°C ≤ 1.5 V TVJ=-40°C ≤ 1.9 V IGT VD=6V T VJ= 25°C ≤ 100 mA TVJ=-40°C ≤ 200 mA VGD TVJ= 125°C V D=2/3VDRM ≤ 0.2 V IGD TVJ= 125°C V D=2/3VDRM ≤ 1m A IL TVJ= 25°C, tP=10µs ≤ 200 mA IG=0.45A, diG/dt=0.45A/µs IH TVJ= 25°C, VD=6V, RGK= ∞≤ 100 mA tgd TVJ= 25°C, VD=1/2VDRM ≤ 2µ s IG=0.45A, diG/dt=0.45A/µs RthJC per thyristor; DC 0.8 K/W per module 0.4 K/W a Max. allowable acceleration 50 m/s²