PSW1C100 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Thyristor controller for AC (circuit W1C acc. to IEC) for mains frequency
  • Isolation voltage 3000 V∼
  • Planar glass passivated chips
  • Low forward voltage drop
  • Leads suitable for PC board soldering
  • UL registered, E 148688

Applications

  • Switching and control of single and three phase AC circuits
  • Light and temperature control
  • Softstart AC motor controller
  • Solid state switches Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density
  • Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 1  2005 POWERSEM reserves the right to change limits, test conditions and dimensions VRSM VRRM Type VDSM VDRM (V) (V) 700 600 PSW1C 100/06 900 800 PSW1C 100/08 1300 1200 PSW1C 100/12 1500 1400 PSW1C 100/14 1700 1600 PSW1C 100/16 Data according to IEC 60747 refer to a single thyristor unless otherwise stated Symbol Test Conditions Maximum Ratings ITRMS TVJ = TVJM 96 A ITAVM TC = 75 °C; 180° sine 63 A ITAVM TC = 85 °C; 180° sine 53 A ITSM TVJ = 45 °C t = 10 ms (50 Hz), sine 1200 A VR = 0 t = 8.3 ms (60 Hz), sine 1300 A TVJ = 125 °C t = 10 ms (50 Hz), sine 1100 A VR = 0 t = 8.3 ms (60 Hz), sine 1200 A ∫∫∫∫∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 7200 A²s VR = 0 t = 8.3 ms (60 Hz), sine 7000 A²s TVJ = 125 °C t = 10 ms (50 Hz), sine 6050 A²s VR = 0 t = 8.3 ms (60 Hz), sine 5970 A²s (di/dt)cr TVJ = 125 °C repetitive, I T = 150 A 150 A/µs f=50Hz, tP=200µs VD=2/3VDRM IG=0.45 A non repetitive,I T = ITAVM 500 A/µs diG/dt=0.45A/µs (dv/dt)cr TVJ = 125 °C V D=2/3VDRM 1000 V/µs RGK= ∞ , method 1 (linear voltage rise) PGM TVJ = 125 °C t P=30µs ≤ 10 W IT =ITAVM tP=300µs ≤ 5W PGAVM 0.5 W VRGM 10 V TVJM 125 °C Tstg -40... + 125 °C VISOL 50/60 Hz, RMS t = 1 min 2500 V ∼ IISOL ≤ 1 mA t = 1 s 3000 V ∼ Md Mounting torque (M4) 1.5 - 1.8 Nm 14 - 16 lb.in. Weight typ. 18 g EF MNIJ G H AB

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Package style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value ID,IR TVJ = 125°C, V R = VRRM, VD=VDRM ≤ 5m A VT IT = 200 A, T VJ = 25 °C ≤ 1.55 V VTO For power-loss calculations only 0.85 V rT 4.0 m Ω VGT VD=6V T VJ= 25°C ≤ 1.5 V TVJ=-40°C ≤ 1.6 V IGT VD=6V T VJ= 25°C ≤ 100 mA TVJ=-40°C ≤ 200 mA VGD TVJ= 125°C V D=2/3VDRM ≤ 0.2 V IGD TVJ= 125°C V D=2/3VDRM ≤ 10 mA IL TVJ= 25°C, tP=10µs, VD=6V ≤ 450 mA IG=0.45A, diG/dt=0.45A/µs IH TVJ= 25°C, VD=6V, RGK= ∞≤ 200 mA tgd TVJ= 25°C, VD=1/2VDRM ≤ 2µ s IG=0.45A, diG/dt=0.45A/µs tq TVJ= TVJM; IT=120A; tp=200µs;-di/dt=10A/µs typ. 150 µs VR=100V; dv/dt=20V/µs; VD=2/3VDRM RthJC per thyristor; DC 0.53 K/W per module 0.27 K/W RthJK per thyristor; sine 180° el typ. 0.73 K/W per module typ. 0.37 K/W ds Creeping distance on surface 6.6 m m dA Creeping distance in air 9.7 m m a Max. allowable acceleration 50 m/s²