PSVT90PSXT90 POWERSEM | Alldatasheet

Document overview

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  • PDF pages: 2

Technical content

Features

  • Package with screw terminals
  • Isolation voltage 3000V ∼
  • Planar glasspassivated chips
  • UL registered, E 148688

Applications

  • Heat and temperature control for industrial furnaces and chemical processes
  • Lighting control
  • Motor control
  • Power converter Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density Characteristic picture Thyristor Modules PSVT 90 I TRMS = 165 A PSXT 90 V RRM = 800 - 1600 V PSVT PSXT Base

PSVT 90, PSXT 90 POWERSEM GmbH, Walpersdorfer Str. 53

91126 D- Schwabach

Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Symbol Test Conditions Characteristic Values ID, IR TVJ = TVJM; VR = VRRM; VD = VDRM ≤ 5 mA VT IT = 200A; TVJ = 25°C ≤ 1.75 V VTO For power-loss calculations only (TVJ=TVJmax) 0.85 V rT 4.3 mΩ VGT VD = 6V T VJ = 25°C ≤ 1.5 V T VJ = -40°C ≤ 1.6 V IGT VD = 6V T VJ = 25°C ≤ 100 mA T VJ = -40°C ≤ 200 mA VGD TVJ = TVJM V D = 2/3 VDRM ≤ 0.2 V IGD ≤ 10 mA IL TVJ = 25°C; tP = 10µs ≤ 450 mA IG = 0.45A; diG /dt = 0.45 A/µs IH TVJ = 25°C; VD = 6V; RGK = ∞ ≤ 200 mA tgd TVJ = 25°C; VD = ½ VDRM ≤ 2 µs IG = 0.45A; diG /dt = 0.45A/µs tq TVJ = TVJM; IT = 120A, tP = 200µs; -di/dt=10A/µs 150 µs VR = 100V; dv/dt = 20 V/µs; VD = 2/3 VDRM RthJC per thyristor; sine 180°el 0.31 K/W per bridge 0.1 K/W RthJK per thyristor; sine 180°el 0.51 K/W per bridge 0.17 K/W ds Creeping distance on surface 10 mm dA Creeping distance in air 9.4 mm a max. allowable acceleration 50 m/s 2 Package, style and outline Dimensions in mm (1 mm=0.0394”)