PSUT115 POWERSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- Thyristor controller for AC (circuit W3C acc. to IEC) for mains frequency
- Isolation voltage 3000 V∼
- Planar glasspassivated chips
- Package with metal base plate
- UL registered E 148688
Applications
- Switching and control of three phase AC circuits
- Light and temperature control
- Softstart AC motor controller
- Solid state switches Advantages
- Easy to mount with two screws
- Space and weight savings
- Improved temperature and power cycling capability
- High power density
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-201 2005 POWERSEM reserves the right to change limits, test conditions and dimensions Symbol Test Conditions Characteristic Value ID, IR TVJ = TVJM, VR = VRRM, VD = VDRM ≤ 10 mA VT IT = 150A, TVJ = TVJM ≤ 1.81 V VTO For power-loss calculations only (TVJ = TVJM) 0.95 V rT 4.3 mΩ VGT VD = 6V T VJ = 25°C ≤ 2.5 V IGT VD = 6V T VJ = 25°C ≤ 150 mA VGD TVJ = TVJM V D = 0,5 VDRM ≤ 0.2 V IGD TVJ = TVJM V D = 6 V ≤ 5 mA IL TVJ = 25°C, tP = 10µs ≤ 600 mA IG = 0.6A, diG/dt = 0.6A/µs IH TVJ = 25°C, VD = 6V, RA = 5Ω ≤ 200 mA tgd TVJ = 25°C, ≤ 1.2 µs IG = 0.6A, diG/dt = 0.6A/µs tq TVJ = TVJM, IT = 50A, tP = 200µs, VR = 100V 190 µs -di/dt = 10A/µs, dv/dt = 20V/µs, VD = 2/3 VDRM RthJC per thyristor; sine 180°el 0.5 K/W per module; sine 180° el 0.083 K/W RthJK per thyristor 0.7 K/W per module 0.12 K/W dS Creeping distance on surface 12.5 mm a Max. allowable acceleration 50 m/s 2 Temperture sensor R25 Rated resistance, Tc = 25 °C R100= 493Ω kΩ P25 Power dissipation, Tc = 25 °C max. 20 mW Fig. Transient thermal impedance per arm vs. time Fig. 2 Maximum allowable case temperature vs. RMS current
POWERSEM GmbH, Walpersdorfer Str. 53 Phone: 09122 - 9764-0 Fax.: 09122 - 9764-201 2005 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 3 Difference between the value of junction temperature and sensor temperature vs. starting current per RMS current Fig. 4 Sensor resistance vs. sensor temperature