PSTKD82 POWERSEM | Alldatasheet

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POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions IFRMS = 180 A IFAVM = 82 A VRRM = 600-1800 V VRSM VRRM Type VV 700 600 PSTKD 82/06 900 800 PSTKD 82/08 1100 1000 PSTKD 82/10 1300 1200 PSTKD 82/12 1500 1400 PSTKD 82/14 1700 1600 PSTKD 82/16 1900 1800 PSTKD 82/18 Features

  • International standard package, JEDEC TO-240 AA
  • Direct Copper Bonded Al2O3 -ceramic base plate
  • Planar passivated chips l● Isolation voltage 3600 V~

Applications

  • Supplies for DC power equipment
  • DC supply for PWM inverter
  • Field supply for DC motors
  • Battery DC power supplies Advantages
  • Space and weight savings
  • Simple mounting with two screws
  • Improved temperature and power cycling
  • Reduced protection circuits High Voltage Diode Module (TRACTION - PAC TM) PSTKD 82 Symbol Test Conditions Maximum Ratings IFRMS TVJ = TVJM 180 A IFAVM TC = 110°C; 180° sine 82 A ITSM TVJ = 45°C; t = 10 ms (50 Hz) 1700 A VR = 0 t = 8.3 ms (60 Hz) 1950 A TVJ = TVJM t = 10 ms (50 Hz) 1530 A VR = 0 t = 8.3 ms (60 Hz) 1740 A òi2dt TVJ = 45°C t = 10 ms (50 Hz) 14450 A 2s VR = 0 t = 8.3 ms (60 Hz) 15700 A 2s TVJ = TVJM t = 10 ms (50 Hz) 11700 A 2s VR = 0 t = 8.3 ms (60 Hz) 12500 A 2s TVJ -40 ...125 °C TVJM 125 °C Tstg -40 ...125 °C VISOL 50/60 Hz, RMS t = 1 min 3000 V~ IISOL ≤ 1 mA t = 1 s 3600 V~ Md Mounting torque (M5) 5.0/44 Nm/lb.in. Terminal connection torque (ISK M5) 3.0/26 Nm/lb.in. Weight Typical including screws 56 g Symbol Test Conditions Characteristic Values IRRM, IDRM TVJ = TVJM; VR = VRRM 15 mA VT IT = 200 A; TVJ = 25°C 1.74 V VT0 For power-loss calculations only (TVJ = TVJM) 0.8 V rT TVJ = TVJM 2.7 m Ω QS TVJ = 125 °C; IF=50 A, -di/dt = 3 A/µs 170 µC IRM 45 A RthJC per diode; DC current 0.35 K/W per module 0.18 K/W RthJK per diode; DC current 0.55 K/W per module 0.275 K/W dS Creeping distance on surface 12.7 mm dA Creepage distance in air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 3 12 ~- + Dimensions in mm (1 mm = 0.0394")

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSTKD 82 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 ∫i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d R thJK (K/W) DC 0.55 180° 0.57 120° 0.59 60° 0.63 30° 0.67 Constants for ZthJK calculation: iR thi (K/W) t i (s) 1 0.013 0.0014 2 0.072 0.062 3 0.265 0.375 4 0.2 1.32 RthJC for various conduction angles d: d R thJC (K/W) DC 0.35 180° 0.37 120° 0.39 60° 0.43 30° 0.47 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.013 0.0014 2 0.072 0.062 3 0.265 0.375