PSSI45D POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Package with DCB ceramic base plate
  • Isolation voltage 3000 V ∼
  • Planar glass passivated chips
  • Low forward voltage drop
  • Leads suitable for PC board soldering
  • UL registered, E 148688 Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density
  • Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Preliminary Data Sheet Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. PSSI 45D/06 PSSI 46D/06 IK 10 VX 18 RT 16 A 1 FH 13 EG 1 FH 13 LN 9 VX 18 IK 10 RT 16 A 1 IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES ± 20 V IC25 TC = 25°C 69 A IC80 TC = 80°C 48 A ICM VGE = ±15 V; RG = 22 Ω ; TVJ = 125°C 100 A VCEK RBSOA, Clamped inductive load; L = 100 µH V CES tSC VCE = VCES; VGE = ±15 V; RG = 22 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 208 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C 2.3 2.8 V TVJ = 125°C 2.8 V VGE(th) IC = 1 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES;V GE = 0 V; T VJ = 25°C 0.8 mA TVJ = 125°C 4.4 mA IGES VCE = 0 V; VGE = ± 20 V 100 nA td(on) 50 ns tr 55 ns td(off) 300 ns tf 30 ns Eon 1.8 mJ Eoff 1.4 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2.8 nF RthJC (per IGBT) 0.6 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.2 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 Ω

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Package style and outline Dimensions in mm (1mm = 0.0394“) PSSI 45D/06 PSSI 46D/06 Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 134 A IF80 TC = 80°C 82 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 60 A; T VJ = 25°C 1.78 1.99 V TVJ = 125°C 1.33 V IRM IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C 28 A trr VR = 300 V; VGE = 0 V 100 ns RthJC 0.66 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.32 K/W Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+150 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 24 g Standard Diode Symbol Test Conditions Characteristic Value IFAVM rectangular, TJ = 150 °C 53 A VF IF = 80 A, TJ = 25 °C 1.2 V VRRM 1200 V IR TJ = 25 °C 50 µA TJ = 150 °C 4 mA IFSM TVJ = 45 °C t = 10 ms (50 Hz), sine 800 A VR = 0 t = 8.3 ms (60 Hz), sine 880 A TVJ = TVJM t = 10 ms (50 Hz), sine 720 A VR = 0 t = 8.3 ms (60 Hz), sine 790 A VTO For power-loss calculations only (TVJ = TVJM) 0.8 V rT 4.8 m Ω RthJC Standard Diode tbd K/W