PSSI25/06

PSIG25-06 POWERSEM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• Package with DCB ceramic base plate
• Isolation voltage 3000 V∼
• Planar glass passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
• UL registered, E 148688

Applications

• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling capability
• High power density
• Small and light weight
• Leads with expansion bend for stress relief POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Preliminary Data Sheet Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. PSIG 25/06 PSI 25/06* PSIS 25/06* PSSI 25/06* IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES ± 20 V IC25 TC = 25°C 24.5 A IC80 TC = 80°C 17 A ICM VGE = ±15 V; RG = 68 Ω ; TVJ = 125°C 30 A VCEK RBSOA, Clamped inductive load; L = 100 µH VCES tSC VCE = VCES; VGE = ±15 V; RG = 68 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 82 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C 2.4 2.9 V TVJ = 125°C 2.9 V VGE(th) IC = 0.4 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES; V GE = 0 V; TVJ = 25°C 0.6 mA TVJ = 125°C 2.7 mA IGES VCE = 0 V; VGE = ± 20 V 100 nA td(on) 30 ns tr 45 ns td(off) 270 ns tf 40 ns Eon 0.7 mJ Eoff 0.5 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 8 nF RthJC (per IGBT) 1.52 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 3 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 15 A VGE = 15/0 V; RG = 68 Ω PSSI PSIS PSIS 25/06* PSIG 25/06 PSI 25/06* PSSI 25/06* PSIG *NTC optional Short Circuit SOA Capability Square RBSOA IK 10 RS 18 AC 1 L 9 F 1 X 15 X 16 NTC T 1 6 L 9 X 16 N T C X 1 5 IK 1 0 R S 18 A C 1 K 1 0 X 1 6 X 1 3 X 1 5 N T C E 2 L 9 P 9 G 1 0 X 1 8 PSI A1 JK 10 S18 LN 9

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 18.5 A IF80 TC = 80°C 12.0 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 15 A; TVJ = 25°C 2.58 2.64 V TVJ = 125°C 1.8 V IRM IF = 10 A; diF/dt = 400 A/µs; TVJ = 125°C 7 A trr VR = 300 V; VGE = 0 V 70 ns RthJC 3.5 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 7 K/W Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 4.75 5.0 5.25 kΩ B25/50 3375 K Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+150 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 24 g PSIS Package style and outline Dimensions in mm (1mm = 0.0394“) PSI PSIG PSSI

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions 0 200 400 600 800 1000 120 012345 0 2 04 06 08 0 012345 TJ = 125°C VCE V A IC VCE A IC V nC QG -di/dt V VGE IRM ns A/µs IRM trr 11V VGE= 17V 15V 13V A 11V VGE= 17V 15V 13V 0123 V VF IF TJ = 25°CTJ = 125°C A 14T60 TJ = 25°C 14T60 14T60 14T60 14T60 4 6 8 10 12 14 16 VCE = 20V V VGE A IC TJ = 25°CTJ = 125°C 14T60 TJ = 125°C VR = 300V IF = 15A VCE = 300V IC = 15A Fig. 1 Typ. output characteristics Fig. 2 Typ. output charact eristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characte ristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off chara cteristics of free wheeling diode

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions 0 1 02 03 0 0 1 02 03 0 0,0 0,5 1,0 1,5 2,0 100 200 300 400 0,00001 0,0001 0,001 0,01 0,1 1 10 0,0001 0,001 0,01 0,1 0 2 04 06 08 0 1 00 1 20 0,0 0,2 0,4 0,6 0,8 100 200 300 400 02 0 4 0 6 0 8 0 1 00 1 20 0,0 0,5 1,0 1,5 2,0 single pulse VCE = 300V VGE = ±15V RG = 68Ω TVJ = 125°C VCE = 300V VGE = ±15V IC = 15A TVJ = 125°C 0 100 200 300 400 500 600 700 RG = 68 Ω TVJ = 125°C VCE = 300V VGE = ±15V RG = 68Ω TVJ = 125°C Eon VCE = 300V VGE = ±15V IC = 15A TVJ = 125°C td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A Eofft t RG Ω RG Ω V s mJ mJ Eoff ns t ns t K/W ZthJC IGBT V A mJ ns nsmJ 14T60 14T60 14T60 14T60 14T60 diode VDI...25-06P1 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn of f energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn o ff energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA