PSS8050 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 2002 Nov 18

2004 Aug 10

NPN medium power 25 V transistor book, halfpage M3D186

2004 Aug 10 2

Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050

FEATURES

  • High total power dissipation
  • High current capability.

APPLICATIONS

  • Medium power switching and muting
  • Amplification
  • Portable radio output amplifier (class-B, push-pull).

DESCRIPTION

NPN transistor in a SOT54 (TO-92) plastic package. PNP complement: PSS8550. MARKING QUICK REFERENCE DATA PINNING TYPE NUMBER MARKING CODE PSS8050C S8050C PSS8050D S8050D SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 25 V IC collector current (DC) 1.5 A PIN DESCRIPTION 1 collector 2 base 3 emitter handbook, halfpage MSB033 Fig.1 Simplified outline (SOT54). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp ≤ 1 s; duty cycleδ≤ 0.75%. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 1.5 A ICM peak collector current − 2A IB base current (DC) − 300 mA IBM peak base current − 1A Ptot total power dissipation T amb ≤ 25 °C; note 1 − 850 mW Tamb ≤ 25 °C; note 2 − 900 mW Tamb ≤ 25 °C; note 3 − 1W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C

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Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 THERMAL CHARACTERISTICS Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp ≤ 1 s; duty cycleδ≤ 0.75%. CHARACTERISTICS Tamb =2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air; note 1 147 K/W in free air; note 2 139 K/W in free air; note 3 125 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector-base cut-off current VCB =3 5V ; IE =0 −− 100 nA VCB =3 5V ; IE = 0; Tamb = 150°C −− 50 µA ICEO collector-emitter cut-off current VCE =2 5V ; IB =0 −− 100 nA IEBO emitter-base cut-off current V EB =6V ; IC =0 −− 100 nA hFE DC current gain I C = 5 mA; VCE =1V 4 5 −− IC = 800 mA; VCE =1V 4 0 −− DC current gain I C = 100 mA; VCE =1V PSS8050C 120 − 200 PSS8050D 160 − 300 VCEsat collector-emitter saturation voltage IC = 800 mA; IB =8 0m A − 165 500 mV VBEsat base-emitter saturation voltage IC = 800 mA; IB =8 0m A −− 1.2 V VBEon base-emitter turn-on voltage IC = 10 mA; VCE =1V −− 1V fT transition frequency I C = 50 mA; VCE =1 0V ; f = 100 MHz 100 −− MHz C c collector capacitance V CB =1 0V ; IE =ie = 0; f = 1 MHz−− 10 pF

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Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 handbook, halfpage 400 100 200 300 MLD946 10-1 1 IC (mA) hFE 10 10 2 103 104 (1) (2) (3) Fig.2 DC current gain as a function of collector current; typical values. PSS8050C VCE =1V . (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD947 10-1 11 0 IC (mA) VBE (mV) 103102 104 (1) (2) (3) Fig.3 Base-emitter voltage as a function of collector current; typical values. PSS8050C VCE =1V . (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C. handbook, halfpage 10-1 11 0 1 0 2 103 10410 102

103 MLD948

IC (mA) VCEsat (mV) (1) (3) (2) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. PSS8050C IC /IB = 10. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage MLD950 200 1400 600 1000 10-1 11 0 IC (mA) VBEsat (mV) 102 103 104 (1) (3) (2) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. PSS8050C IC /IB = 10. (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C.

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Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 handbook, halfpage MLD949 103 102 10-1 1 R CEsat (W ) IC (mA)10 10 2 103 104 (1) (3) (2) Fig.6 Equivalent on-resistance as a function of collector current; typical values. PSS8050C IC /IB = 10. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 0 0.5 1 VCE (V) IC (A) 2.5 1.5 1.5 0.5 MLD951 (1) (8) (2) (3) (4) (7) (5) (6) (10) (9) Fig.7 Collector current as a function of collector-emitter voltage; typical values. PSS8050C (1) IB = 55 mA. (2) IB = 49.5 mA. (3) IB = 44 mA. (4) IB = 38.5 mA. (5) IB = 33 mA. (6) IB = 27.5 mA. (7) IB = 22 mA. (8) IB = 16.5 mA. (9) IB = 11 mA. (10) IB = 5.5 mA.

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Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 handbook, halfpage 400 100 200 300 MLD952 10-1 1 IC (mA) hFE 10 10 2 103 104 (1) (2) (3) Fig.8 DC current gain as a function of collector current; typical values. PSS8050D VCE =1V . (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD953 10-1 11 0 IC (mA) VBE (mV) 103102 104 (1) (2) (3) Fig.9 Base-emitter voltage as a function of collector current; typical values. PSS8050D VCE =1V . (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C. handbook, halfpage MLD954 103 102 10-1 11 0 IC (mA) VCEsat (mV) 103102 104 (1) (3) (2) Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. PSS8050D IC /IB = 10. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage MLD956 200 1400 600 1000 10-1 11 0 IC (mA) VBEsat (mV) 102 103 104 (1) (3) (2) Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. PSS8050D IC /IB = 10. (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C.

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Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 handbook, halfpage MLD955 103 102 10-1 1 R CEsat (W ) IC (mA) 10 10 2 103 104 (1) (3) (2) Fig.12 Equivalent on-resistance as a function of collector current; typical values. PSS8050D IC /IB = 10. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 0 0.5 1 VCE (V) IC (A) 2.5 1.5 1.5 0.5 MLD957 (7) (9) (10) (1) (8) (6) (5) (4) (3) (2) Fig.13 Collector current as a function of collector-emitter voltage; typical values. PSS8050D (1) IB = 55 mA. (2) IB = 49.5 mA. (3) IB = 44 mA. (4) IB = 38.5 mA. (5) IB = 33 mA. (6) IB = 27.5 mA. (7) IB = 22 mA. (8) IB = 16.5 mA. (9) IB = 11 mA. (10) IB = 5.5 mA.

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Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 PACKAGE OUTLINE UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 L1(1) max. 2.5 0.66 0.55 DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 TO-92 SC-43A 97-02-28 04-06-28 A L 0 2.5 5 mm scale b c D b1 L1 d E Plastic single-ended leaded (through hole) package; 3 leads SOT54 e

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Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R75/02/pp10 Date of release:2004 Aug 10 Document order number: 9397 750 13682