08051J150GBS integrated circuit reference

IC

08051J150GBS

NXP Semiconductors

Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013

Manufacturer
NXP Semiconductors
Document
25 Pages / 1Mb

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Product Information

08051J150GBS specifications and overview.

Summary

Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013

Description

Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013

Source title 08051J150GBS Datasheet(PDF) - NXP Semiconductors