PSMN006-20K NEXPERIA | Alldatasheet
Document overview
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Technical content
1.1 General description
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Table 1. Quick reference
Table 2. Pinning information Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
© Nexperia B.V. 2017. All rights reserved PSMN006-20K_1 Product data sheet Rev. 01 — 17 November 2009 3 of 12 Nexperia PSMN006-20K N-channel TrenchMOS SiliconMAX ultra low level FET Fig 1. Normalized continuous drain current as a function of solder point temperature Fig 2. Normalized total power dissipation as a function of solder point temperature Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Tsp (°C) 0 200 15050 100 03aa25 120 Ider (%) Tsp (°C) 0 200 15050 100 03aa17 120 P der (%) 03ai63 VDS (V) 10−1 102101 102 ID (A) 10−1 Limit RDSon = VDS/ID 100 ms 10 ms 1 ms tp = 10 µs DC
Table 5. Thermal characteristics
Table 6. Characteristics
© Nexperia B.V. 2017. All rights reserved PSMN006-20K_1 Product data sheet Rev. 01 — 17 November 2009 6 of 12 Nexperia PSMN006-20K N-channel TrenchMOS SiliconMAX ultra low level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Gate-source threshold voltage as a function of junction temperature 03ai64 0 0.05 0.1 0.15 0.2 V DS (V) ID (A) 1.3 V 2 V 1.5 V 2.5 V 1.1 V 4.5 V VGS = 1 V 03ai66 0 0.4 0.8 1.2 1.6 V GS (V) ID (A) VDS > ID x RDSon Tj = 150 °C 25 °C 03ai70 10−6 10−5 10−4 10−3 10−2 10−1 0 0.2 0.4 0.6 0.8 1 VGS (V) ID (A) min typ 03ai71 0.2 0.4 0.6 0.8 −80 0 80 160 Tj (°C) VGS(th) (V) min typ
© Nexperia B.V. 2017. All rights reserved PSMN006-20K_1 Product data sheet Rev. 01 — 17 November 2009 7 of 12 Nexperia PSMN006-20K N-channel TrenchMOS SiliconMAX ultra low level FET Fig 9. Drain-source on-state resistance as a function of drain current; typical values Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03ai65 01 0 2 0 3 0 ID (A) RDSon (mW) Tj = 25 °C VGS = 1.5 V 2.5 V 4.5 V 2 V 03af18 0.5 1.5 -60 0 60 120 180 Tj (°C) a 03ai69 02 0 4 0 6 0 8 0 QG (nC) VGS (V) VDD = 10 V ID = 30 A Tj = 25 °C 03ai68 102 103 104 10−1 1 10 102 VDS (V) C (pF) Ciss Coss Crss
© Nexperia B.V. 2017. All rights reserved PSMN006-20K_1 Product data sheet Rev. 01 — 17 November 2009 8 of 12 Nexperia PSMN006-20K N-channel TrenchMOS SiliconMAX ultra low level FET Fig 13. Source current as a function of source-drain voltage; typical values 03ai67 0 0.2 0.4 0.6 0.8 1 V SD (V) IS (A) Tj = 150 °C 25 °C VGS = 0 V
© Nexperia B.V. 2017. All rights reserved PSMN006-20K_1 Product data sheet Rev. 01 — 17 November 2009 9 of 12 Nexperia PSMN006-20K N-channel TrenchMOS SiliconMAX ultra low level FET 7. Package outline Fig 14. Package outline SOT96-1 (SO8) UNIT A max. A1 A2 A3 bp cD (1) E(2) (1)eH E LL p QZ y w v θ REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 o o 0.25 0.10.25 DIMENSIONS (inch dimensions are derived from the original mm dimensions) Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. 1.0 0.4 SOT96-1 X w M θ AA1 bp D HE Lp Q detail X E Z e c L v M A (A )3 A pin 1 index y 076E03 MS-012 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.05 0.244 0.228 0.028 0.024 0.028 0.016 0 2.5 5 mm scale SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 99-12-27 03-02-18
Table 7. Revision history
© Nexperia B.V. 2017. All rights reserved PSMN006-20K_1 Product data sheet Rev. 01 — 17 November 2009 11 of 12 Nexperia PSMN006-20K N-channel TrenchMOS SiliconMAX ultra low level FET 9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any represent ations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales offi ce. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warrant ies, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Nexperia reserves the right to make changes t o information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, author ized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and theref ore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no represent ation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms , including those pertaining to warranty, inte llectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conf lict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as th e item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This doc ument contains the product specification.
N-channel TrenchMOS SiliconMAX ultra low level FET 11. Contents © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: