PSMG60-08 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Package with DCB ceramic base plate
  • Isolation voltage 3000 V∼
  • Planar glass passivated chips
  • Low forward voltage drop
  • Leads suitable for PC board soldering
  • Low RDS(on) HDMOSTM process
  • Fast intrinsic Rectifier
  • UL registerd, E 148688

Applications

  • DC-DC converters
  • Battery chargers
  • Switched-mode and resonant-mode power supplies
  • DC choppers
  • Temperature and lighting controls Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density
  • Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Symbol Test Conditions Maximum Ratings VDSS TJ = 25 °C to 150 °C 800 V VDGR TJ = 25 °C to 150 °C, RGS = 1 MΩ 800 V VGS continuous ±20 V VGSM transient ±30 V ID25 TCase = 25 °C 60 A IDM TCase = 25 °C, pulse width limited by TJM 240 A IAR 60 A EAR TC = 25 °C 64 mJ EAS TC = 25 °C 3 J dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD≤ VDSS, 5 V/ns TJ ≤ 150 °C, RG = 2 Ω PD TCase = 25 °C 1200 W TJ -55...+150 °C TJM +150 °C Tstg -55...+150 °C VISOL 50/60 Hz, RMS t = 1 min. 2500 V~ VISOL IISOL ≤ 1 mA t = 1 s 3000 V~ Md Mounting torque (M4) 1.5 Nm 14 lb.in. a max. allowed acceleration 50 m/s 2 Weight 26 g Symbol Test Conditions Characteristic Values (TJ = 25 °C, unless otherwise specified) VDSS VGS = 0 V, ID = 3 mA min. 800 V VDSS temperature coefficient typ. 0.096 %/K VGS(th) VGS = VDS, ID = 8 mA min. 3.0 V max. 5.0 V VGS(th) temperature coefficient typ. -0.214 %/K IGSS VDS = 0 V, VGS = ± 20 V max. ± 200 nA IDSS VDS = VDSS, TJ = 25 °C max. 100 µA VGS = 0 V, T J = 125 °C max. 2 mA RDS(on) VGS = 10 V, ID = 0.5 . ID25 pulse test, t ≤ 300 µs, max. 0.12 Ω duty cycle d ≤ 2 % Preliminary Data Sheet MOSFET (data related to single chip) Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. G DS ATTENTION: All given data are derived from similar modules or estimated from chip data. Typical picture; changes of the pin configuration is reserved.

Symbol Test Conditions Characteristic Values (TJ = 25 °C, unless otherwise specified) Ciss VGS = 0 V, typ. 15000 pF Coss } VDS = 25 V, typ. 1840 pF Crss f = 1 MHz typ. 440 pF td(on) VGS = 10 V, typ. 45 ns tr VDS = 0.5 . VDSS, typ. 45 ns td(off) ID = 0.5 . ID25 typ. 100 ns tf RG = 1 Ω (External) typ. 40 ns RthJC 0.45 K/W RthCK 0.60 K/W ECO-PACTM 2 POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25 °C, unless otherwise specified) IS VGS = 0 V max. 34 A ISM repetitive max. 136 A pulse width limited by TJM VSD IF = IS, VGS = 0 V max. 1.5 V pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr IF = IS, TJ= 25 °C max. 250 ns TJ=125 °C max. 400 ns QRM -di/dt = 100 A/µs, TJ= 25 °C typ. 1.4 µC IRM VR = 100 V typ. 10 A Package style and preliminary outline Dimensions in mm (1mm = 0.0394“) ATTENTION: All given data are derived from similar modules or estimated from chip data. Characteristic pin configuration; changes of the pin configuration is reserved.