PSMG150-01 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 3000V electrical isolation
  • Low drain to tab capacitance(< 25pF)
  • Low R DS (on) HDMOSTM process
  • Rugged polysilicon gate cell structure
  • Unclamped Inductive Switching (UIS) rated
  • Fast intrinsic Rectifier
  • UL certified, E 148688

Applications

  • DC-DC converters
  • Battery chargers
  • Switched-mode and resonant-mode power supplies
  • DC choppers
  • AC motor control Advantages
  • Easy assembly
  • Space savings
  • High power density MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C (MOSFET chip capability) 165 A ID(RMS) External lead (current limit) 76 A IDM TC = 25°C 1) 720 A IAR TC = 25°C 180 A EAR TC = 25°C 60 mJ EAS TC = 25°C 3 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 400 W Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 100 V VGS(th) VDS = VGS, ID = 8 mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 ±100 nA IDSS VDS = VDSS; TJ = 25°C 100 µA VGS = 0 V; TJ = 125°C 2 mA RDS(on) VGS = 10 V, ID = 90 A 1) 8m Ω gfs VDS = 10 V; ID = 90 A 2) 60 90 S Ciss 9400 pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3200 pF Crss 1660 pF td(on) 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 90 A 90 ns td(off) RG = 1 Ω (External) 140 ns tf 65 ns Qg(on) 400 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 90 A 65 nC Qgd 220 nC RthJC 0.30 K/W RthCK with heatsink compound (0.42 K/m.K; 50 µm) 0.2 K/W PSMG 150/01* I K10/11 X18 L N 8/9A1 K13 K15

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions Package style and outline Dimensions in mm (1mm = 0.0394“) Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 m m dA Strike distance in air (Pin to heatsink) 11.2 m m Weight 24 g Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 180 A ISM Repetitive; 720 A pulse width limited by T JM VSD IF = 100A, VGS = 0 V, 1) 1.5 V trr 250 ns QRM IF = 50A,-di/dt = 100 A/µs, VR = 100 V 1.1 µC IRM 13 A Note: 1) Pulse width limited by TJM 2) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 4.75 5.0 5.25 k Ω B25/50 3375 K