PSMG100-05 POWERSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 3000V electrical isolation
- Low drain to tab capacitance(< 25pF)
- Low R DS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier
- UL certified, E 148688
Applications
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC motor control Advantages
- Easy assembly
- Space savings
- High power density *NTC optional I K10 X18 L N 9A1 K13 K15
POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions Dimensions in mm (1 mm = 0.0394") Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 85 A ISM Repetitive; pulse width limited by T JM 340 A VSD IF = IS, VGS = 0 V 1.5 V trr 250 ns QRM IF = 50A,-di/dt = 100 A/µs, VR = 100 V 1.4 µC IRM 13 A Note: 1) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2% 2) IT test current: IT = 25A Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 m m dA Strike distance in air (Pin to heatsink) 11.2 m m Weight 24 g