PSKT310 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • International standard package
  • Direct copper bonded Al2O3 -ceramic base plate
  • Planar passivated chips
  • Isolation voltage 3600 V~
  • UL registered, E 148688
  • Keyed gate/cathode twin pins

Applications

  • Motor control
  • Power converter
  • Heat and temperature control for industrial furnaces and chemical processes
  • Lighting control
  • Contactless switche s Advantages
  • Space and weight savings
  • Simple mounting with two screws
  • Improved temperature and power cycling capability
  • Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. PSKT 310 PSKH 310 VRSM VRRM Type VDSM VDRM V V Version 1 Version 1 900 800 PSKT 310/08io1 PSKH 310/08io1 1300 1200 PSKT 310/12io1 PSKH 310/12io1 1500 1400 PSKT 310/14io1 PSKH 310/14io1 1700 1600 PSKT 310/16io1 PSKH 310/16io1 1900 1800 PSKT 310/18io1 PSKH 310/18io1 PSKH PSKT ITRMS = 2x 500 A ITAVM = 2x 320 A VRRM = 800-1800 V 36 7 1 5 4 2 31 5 4 2 7654 Symbol Test Conditions Maximum Ratings ITRMS, IFRMS TVJ = TVJM 500 A ITAVM, IFAVM TC = 85°C; 180° sine 320 A ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 9200 A VR = 0 t = 8.3 ms (60 Hz), sine 9800 A TVJ = TVJM t = 10 ms (50 Hz), sine 8000 A VR = 0 t = 8.3 ms (60 Hz), sine 8600 A ∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 420 000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 400 000 A 2s TVJ = TVJM t = 10 ms (50 Hz), sine 320 000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 306 000 A 2s (di/dt)cr TVJ = TVJM repetitive, IT = 960 A 100 A/µs f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 1 A non repetitive, I T = 320 A 500 A/µs diG/dt = 1 A/µs (dv/dt)cr TVJ = TVJM;V DR = 2/3 VDRM 1000 V/µs RGK = ∞ ; method 1 (linear voltage rise) PGM TVJ = TVJM tP = 30 µs 120 W IT = ITAVM tP = 500 µs 60 W PGAV 20 W VRGM 10 V TVJ -40...+140 °C TVJM 140 °C Tstg -40...+125 °C VISOL 50/60 Hz, RMS t = 1 min 3000 V~ IISOL ≤ 1 mA t = 1 s 3600 V~ Md Mounting torque (M5) 2.5-5/22-44 Nm/lb.in. Terminal connection torque (M8) 12-15/106-132 Nm/lb.in. Weight Typical including screws 320 g

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Symbol Test Conditions Characteristic Values IRRM TVJ = TVJM; VR = VRRM; VD = VDRM 70 mA IDRM 40 mA VT, VF IT, IF = 600 A; TVJ = 25°C 1.32 V VT0 For power-loss calculations only (T VJ = 140°C) 0.8 V rT 0.82 m Ω VGT VD = 6 V; T VJ = 25°C 2 V TVJ = -40°C 3 V IGT VD = 6 V; T VJ = 25°C 150 mA TVJ = -40°C 200 mA VGD TVJ = TVJM;V D = 2/3 VDRM 0.25 V IGD 10 mA IL TVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA IG = 0.45 A; diG/dt = 0.45 A/µs IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA tgd TVJ = 25°C; VD = 1/2 VDRM 2µ s IG = 1 A; diG/dt = 1 A/µs tq TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 200 µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM QS TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/µs 760 µC IRM 275 A RthJC per thyristor/diode; DC current 0.112 K/W per module other values 0.056 K/W RthJK per thyristor/diode; DC current see Fig. 8/9 0.152 K/W per module 0.076 K/W dS Creepage distance on surface 12.7 m m dA Strike distance through air 9.6 m m a Maximum allowable acceleration 50 m/s 2 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Dimensions in mm (1 mm = 0.0394") PSKT PSKH Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time 20 12

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B 6 3xPSKT 310 or 3xPSKH 310

 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 t s ZthJK K/W t s ZthJC K/W 30° DC 30° DC Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJC for various conduction angles d: dR thJC (K/W) DC 0.112 180°C 0.113 120°C 0.114 60°C 0.115 30°C 0.115 Constants for Z thJC calculation: iR thi (K/W) t i (s) 1 0.003 0.099 2 0.0143 0.168 3 0.0947 0.456RthJK for various conduction angles d: dR thJK (K/W) DC 0.152 180°C 0.154 120°C 0.154 60°C 0.155 30°C 0.155 Constants for Z thJK calculation: iR thi (K/W) t i (s) 1 0.003 0.099 2 0.0143 0.168 3 0.0947 0.456 4 0.04 1.36 Circuit W 3 3xPSKT 310 or 3xPSKH 310