PSKT132 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • International standard package
  • Direct copper bonded Al2O3 -ceramic base plate
  • Planar passivated chips
  • Isolation voltage 3600 V~
  • UL registered, E 148688
  • Keyed gate/cathode twin pins

Applications

  • Motor control
  • Power converter
  • Heat and temperature control for industrial furnaces and chemical processes
  • Lighting control
  • Contactless switches Advantages
  • Space and weight savings
  • Simple mounting
  • Improved temperature and power cycling capability
  • Reduced protection circuits Symbol Test Conditions Maximum Ratings ITRMS, IFRMS TVJ = TVJM 300 A ITAVM, IFAVM TC = 85°C; 180° sine 130 A ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 4750 A VR = 0 t = 8.3 ms (60 Hz), sine 5080 A TVJ = TVJM t = 10 ms (50 Hz), sine 4230 A VR = 0 t = 8.3 ms (60 Hz), sine 4530 A ∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 113 000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 108 000 A 2s TVJ = TVJM t = 10 ms (50 Hz), sine 89 500 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 86 200 A 2s (di/dt)cr TVJ = TVJM repetitive, IT = 500 A 150 A/µs f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 0.5 A non repetitive, I T = 500 A 500 A/µs diG/dt = 0.5 A/µs (dv/dt)cr TVJ = TVJM;V DR = 2/3 VDRM 1000 V/µs RGK = ∞ ; method 1 (linear voltage rise) PGM TVJ = TVJM tP = 30 µs 120 W IT = ITAVM tP = 500 µs 60 W PGAV 8W VRGM 10 V TVJ -40...+125 °C TVJM 125 °C Tstg -40...+125 °C VISOL 50/60 Hz, RMS t = 1 min 3000 V~ IISOL ≤ 1 mA t = 1 s 3600 V~ Md Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in. Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in. Weight Typical including screws 125 g 3 6 7 5 4

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKTPSKTPSKTPSKTPSKT PSKHPSKHPSKHPSKHPSKH Symbol Test Conditions Characteristic Values IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM 10 mA VT, VF IT, IF = 300 A; TVJ = 25°C 1.36 V VT0 For power-loss calculations only (TVJ = 125°C) 0.8 V rT 1.5 m Ω VGT VD = 6 V; T VJ = 25°C 2.5 V TVJ = -40°C 2.6 V IGT VD = 6 V; T VJ = 25°C 150 mA TVJ = -40°C 200 mA VGD TVJ = TVJM;V D = 2/3 VDRM 0.2 V IGD 10 mA IL TVJ = 25°C; tP = 30 µs; VD = 6 V 300 mA IG = 0.5 A; diG/dt = 0.5 A/µs IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA tgd TVJ = 25°C; VD = 1/2 VDRM 2µ s IG = 0.5 A; diG/dt = 0.5 A/µs tq TVJ = TVJM; IT = 160 A, tP = 200 µs; -di/dt = 10 A/µs typ. 150 µs VR = 100 V; dv/dt = 20 V/µs; V D = 2/3 VDRM QS TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/µs 550 µC IRM 235 A RthJC per thyristor/diode; DC current 0.23 K/W per module other values 0.115 K/W RthJK per thyristor/diode; DC current see Fig. 8/9 0.33 K/W per module 0.165 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 4 i 2t versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 3 Surge overload current I TSM, IFSM: Crest value, t: duration s t ms t 0.001 0.01 0.1 1 1000 2000 3000 4000 11 0 104 105 106 A2s ITSM A i2t TVJ = 45°C TVJ = 125°C 80 % VRRM TVJ = 45°C 50 Hz TVJ = 125°C Circuit B 6 3xPSKT132 or 3xPSKH 132

 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJC for various conduction angles d: d R thJC (K/W) DC 0.230 180° 0.244 120° 0.255 60° 0.283 30° 0.321 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.0095 0.001 2 0.0175 0.065 3 0.203 0.4RthJK for various conduction angles d: d R thJK (K/W) DC 0.330 180° 0.344 120° 0.355 60° 0.383 30° 0.421 Constants for ZthJK calculation: iR thi (K/W) t i (s) 1 0.0095 0.001 2 0.0175 0.065 3 0.203 0.4 4 0.1 1.29 Circuit W 3 3xPSKT132 or 3xPSKH 132 ZthJC (t) ZthJK(t)