PSKD220 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Direct copper bonded Al 2O3 -ceramic base plate
  • Planar passivated chips
  • Isolation voltage 3600 V~
  • UL registered, E 148688

Applications

  • Supplies for DC power equipment
  • DC supply for PWM inverter
  • Field supply for DC motors
  • Battery DC power supplies Advantages
  • Space and weight savings
  • Simple mounting
  • Improved temperature and power cycling
  • Reduced protection circuits Dimensions in mm (1 mm = 0.0394") VRSM VRRM Type VV 900 800 PSKD 220/08 1300 1200 PSKD 220/12 1500 1400 PSKD 220/14 1700 1600 PSKD 220/16 312 Diode Modules Preliminary Data Sheet PSKD 220 Symbol Test Conditions Characteristic Values IRRM TVJ = TVJM; VR = VRRM 40 mA VF IF = 600 A; TVJ = 25°C 1.4 V VT0 For power-loss calculations only 0.75 V rT TVJ = TVJM 0.9 m Ω RthJC per diode; DC current 0.129 K/W per module other values 0.065 K/W RthJK per diode; DC current see Fig. 6/7 0.169 K/W per module 0.0845 K/W QS TVJ = 125°C, IF = 400 A; -di/dt = 50 A/µs 760 µC IRM 275 A dS Creepage distance on surface 12.7 m m dA Strike distance through air 9.6 m m a Maximum allowable acceleration 50 m/s 2 Symbol Test Conditions Maximum Ratings IFRMS TVJ = TVJM 450 A IFAVM TC = 100°C; 180° sine 270 A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 8500 A VR = 0 t = 8.3 ms (60 Hz), sine 9000 A TVJ = TVJM t = 10 ms (50 Hz), sine 7500 A VR = 0 t = 8.3 ms (60 Hz), sine 8000 A ∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 360 000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 340 000 A 2s TVJ = TVJM t = 10 ms (50 Hz), sine 280 000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 260 000 A 2s TVJ -40...+150 °C TVJM 150 °C Tstg -40...+125 °C VISOL 50/60 Hz, RMS t = 1 min 3000 V~ IISOL ≤ 1 mA t = 1 s 3600 V~ Md Mounting torque (M5) 2.5-5/22-44 Nm/lb.in. Terminal connection torque (M8) 12-15/106-132 Nm/lb.in. Weight Typical including screws 320 g Threaded spacer for higher Anode/Cathode construction: Type ZY 250, material brass

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 ∫i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Circuit B 2 2 x PSKD 220

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d R thJK (K/W) DC 0.169 180° 0.171 120° 0.172 60° 0.172 30° 0.173 Constants for Z thJK calculation: iR thi (K/W) t i (s) 1 0.0035 0.0099 2 0.0165 0.168 3 0.1091 0.456 4 0.04 1.36 RthJC for various conduction angles d: d R thJC (K/W) DC 0.129 180° 0.131 120° 0.132 60° 0.132 30° 0.133 Constants for Z thJC calculation: iR thi (K/W) t i (s) 1 0.0035 0.0099 2 0.0165 0.168 3 0.1091 0.456 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 t s ZthJK K/W t s ZthJC K/W 30° DC 30° DC Circuit B 6 3 x PSKD 220