PSKD172 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • International standard package
  • Direct copper bonded Al 2O3 -ceramic base plate
  • Planar passivated chips
  • Isolation voltage 3600 V~
  • UL registered, E 148688

Applications

  • Supplies for DC power equipment
  • DC supply for PWM inverter
  • Field supply for DC motors
  • Battery DC power supplies Advantages
  • Space and weight savings
  • Simple mounting
  • Improved temperature and power cycling
  • Reduced protection circuits Dimensions in mm (1 mm = 0.0394") VRSM VRRM Type VV 900 800 PSKD 172/08 1300 1200 PSKD 172/12 1500 1400 PSKD 172/14 1700 1600 PSKD 172/16 1900 1800 PSKD 172/18 312 Diode Modules Preliminary Data Sheet PSKD 172 Symbol Test Conditions Characteristic Values IR TVJ = TVJM; VR = VRRM 20 mA VF IF = 300 A; TVJ = 25°C 1.15 V VT0 For power-loss calculations only 0.8 V rT TVJ = TVJM 0.8 m Ω QS TVJ = 125°C; IF = 300 A, -di/dt = 50 A/µs 550 µC IRM 235 A RthJC per diode; DC current 0.21 K/W per module other values 0.105 K/W RthJK per diode; DC current see Fig. 6/7 0.31 K/W per module 0.155 K/W dS Creepage distance on surface 12.7 m m dA Strike distance through air 9.6 m m a Maximum allowable acceleration 50 m/s 2 Symbol Test Conditions Maximum Ratings IFRMS TVJ = TVJM 300 A IFAVM TC = 100°C; 180° sine 190 A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 6600 A VR = 0 t = 8.3 ms (60 Hz), sine 7290 A TVJ = TVJM t = 10 ms (50 Hz), sine 5600 A VR = 0 t = 8.3 ms (60 Hz), sine 6200 A ∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 218 000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 221 000 A 2s TVJ = TVJM t = 10 ms (50 Hz), sine 157 000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 160 000 A 2s TVJ -40...+150 °C TVJM 150 °C Tstg -40...+125 °C VISOL 50/60 Hz, RMS t = 1 min 3000 V~ IISOL ≤ 1 mA t = 1 s 3600 V~ Md Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in. Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in. Weight Typical including screws 120 g

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 ∫i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Circuit B 2 2 x PSKD 172

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d R thJK (K/W) DC 0.31 180° 0.323 120° 0.333 60° 0.360 30° 0.395 Constants for Z thJK calculation: iR thi (K/W) t i (s) 1 0.0087 0.001 2 0.0163 0.065 3 0.185 0.4 4 0.1 1.29 RthJC for various conduction angles d: d R thJC (K/W) DC 0.210 180° 0.223 120° 0.233 60° 0.260 30° 0.295 Constants for Z thJC calculation: iR thi (K/W) t i (s) 1 0.0087 0.001 2 0.0163 0.065 3 0.185 0.4 Circuit B 6 3 x PSKD 172