PSIPM35-12 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Package with DCB ceramic base plate
  • High level of integration - only one power semiconductor module required for the whole drive
  • Planar glass passivated chips
  • NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness
  • Epitaxial free wheeling diodes with hiperfast and soft reverse recovery
  • Temperature sense included
  • Leads suitable for PC board soldering
  • UL Release applied Application: AC motor drives with
  • Input from single or three phase grid
  • Three phase synchronous or asynchronous motor
  • Electric braking operations POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Preliminary Data Sheet Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. PSIPM 35/12 Symbol T est Conditions Characteristic Value IR VR = VRRM, TVJ = TVJM ≤ 3 mA VR = VRRM, TVJ = 25°C ≤ 0.5m A V F IF = 55 A, TVJ = 25 °C ≤ 1.46 V V TO For power-loss calculations only 0.8 V r T 13 mΩ RthJC per diode; DC 1.1 K/W dAV TC = 100 °C, (per circuit) 68 A I FSM TVJ = 25°C; t = 10 ms; sin 50 Hz 300 A V RRM 1600 V Symbol T est Conditions Maximum Ratings Three Phase Brake Chopper Three Phase Rectifier Inverter VRRM = 1600 V V CES = 1200 V V CES = 1200 V IFAVM = 68 A I C25 = 30 A I C25 = 49 A IFSM = 300 A V CE(sat) = 2.6 V V CE(sat) = 3.1 V Input Rectifiers V4 V7 A15 A10 A5 V15 F15 H1 U1 L1 P1 R1 H15 N15 S15 U15 D15 J15 O15 V13 V11Q15L15 ECO-TOPTM 1

product still underdevelopment PSIPM 35/12 POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Output Inverter IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES ± 20 V IC25 TC = 25°C 49 A IC80 TC = 80°C 33 A ICM VGE = ±15 V; RG = 47 Ω ; TVJ = 125°C 50 A VCEK RBSOA, Clamped inductive load; L = 100 µH V CES tSC VCE = VCES; VGE = ±15 V; RG = 47 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 208 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C 3.1 3.7 V TVJ = 125°C 3.5 V VGE(th) IC = 1 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES;V GE = 0 V; T VJ = 25°C 1.1 mA TVJ = 125°C 4.2 mA IGES VCE = 0 V; VGE = ± 20 V 180 nA td(on) 100 ns tr 70 ns td(off) 500 ns tf 70 ns Eon 4.6 mJ Eoff 3.4 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 1.65 nF RthJC (per IGBT) 0.6 K/W Inductive load, TVJ = 125°C VCE = 600 V; IC = 30 A VGE = 15/0 V; RG = 47 Ω Output Inverter Reverse Diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 49 A IF80 TC = 80°C 31 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 30 A; TVJ = 25°C 2.4 2.7 V TVJ = 125°C 1.77 V IRM IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C 27 A trr VR = 600 V; VGE = 0 V 150 ns RthJC 1.3 K/W

product still underdevelopment PSIPM 35/12 POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Brake Chopper Diode (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 26 A IF80 TC = 80°C 17 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 17.5 A; TVJ = 25°C 2.48 2.79 V TVJ = 125°C 1.84 V IRM IF = 15 A; diF/dt = 400 A/µs; TVJ = 125°C 16 A trr VR = 600 V; VGE = 0 V 130 ns RthJC 2.3 K/W Brake Chopper IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES ± 20 V IC25 TC = 25°C 30 A IC80 TC = 80°C 21 A ICM VGE = ±15 V; RG = 82 Ω ; TVJ = 125°C 35 A VCEK RBSOA, Clamped inductive load; L = 100 µH V CES tSC VCE = VCES; VGE = ±15 V; RG = 82 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 130 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C 2.6 3.3 V TVJ = 125°C 2.9 V VGE(th) IC = 0.6 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES;V GE = 0 V; T VJ = 25°C 0.9 mA TVJ = 125°C 3.7 mA IGES VCE = 0 V; VGE = ± 20 V 100 nA td(on) 100 ns tr 75 ns td(off) 500 ns tf 70 ns Eon 2.7 mJ Eoff 2.1 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 1 nF RthJC (per IGBT) 0.96 K/W Inductive load, TVJ = 125°C VCE = 600 V; IC = 17.5 A VGE = 15/0 V; RG = 82 Ω

product still underdevelopment PSIPM 35/12 POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Module Symbol Conditions Maximum Ratings TVJ -40...+125 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 3 Nm 26 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 86 g Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 4.75 5.0 5.25 k Ω B25/50 3375 K Package style and outline Dimensions in mm (1mm = 0.0394“)