PSII75-12 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Package with DCB ceramic base plate
  • Isolation voltage 3000 V∼
  • Planar glass passivated chips
  • Low forward voltage drop
  • Leads suitable for PC board soldering
  • UL Release applied

Applications

  • AC and DC motor control
  • AC servo and robot drives
  • Power supplies
  • Welding inverters Advantages
  • Easy to mount with four screws
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density
  • Small and light weight IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES ± 20 V IC25 TC = 25°C 90 A IC80 TC = 80°C 60 A ICM VGE = ±15 V; RG = 22 Ω ; TVJ = 125°C 100 A VCEK RBSOA, Clamped inductive load; L = 100 µH V CES tSC VCE = VCES; VGE = ±15 V; RG = 22 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 379 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C 2.7 3.2 V TVJ = 125°C 3.0 V VGE(th) IC = 2 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES;V GE = 0 V; T VJ = 25°C 3.7 mA TVJ = 125°C 12.5 mA IGES VCE = 0 V; VGE = ± 20 V 200 nA td(on) 100 ns tr 70 ns td(off) 500 ns tf 70 ns Eon 9.1 mJ Eoff 6.7 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 3.3 nF RthJC (per IGBT) 0.33 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 0.66 K/W Inductive load, TVJ = 125°C VCE = 600 V; IC = 60 A VGE = 15/0 V; RG = 22 Ω *NTC optional ECO-TOPTM 1 V3 V6 N1G1 V10 N15 V13 V12 G15 S15 A15 R15 typical picture, for pin configuration see outline drawing

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions tentative data sheet product still underdevelopment Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 100 A IF80 TC = 80°C 60 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 60 A; TVJ = 25°C 2.28 2.6 V TVJ = 125°C 1.67 V IRM IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C 41 A trr VR = 600 V; VGE = 0 V 200 ns RthJC 0.66 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.32 K/W Module Symbol Conditions Maximum Ratings T VJ -40...+125 °C Tstg -40...+150 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M5) 3 Nm 26 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 m m dA Strike distance in air (Pin to heatsink) 11.2 m m Weight 86 g Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 4.75 5.0 5.25 k Ω B25/50 3375 K Package style and outline Dimensions in mm (1mm = 0.0394“)

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions tentative data sheet product still underdevelopment Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 120 150 180 0 200 400 600 800 1000 120 100 200 300 100 120 0 50 100 150 200 250 100 120 13 V 11 V TJ = 25°C VGE =17 VTJ = 125°C 15 V 56789 1 0 1 1 100 120 13 V 11 V VGE =17 V 15 V VCE = 20 V TJ = 25°C 9 V 9 V VCE V A IC VCE A IC V VV VGE VF A IC A IF nC QG -di/dt V VGE A IRM trr ns A/µs TJ = 125°C VR = 600 V IF = 50 A TJ = 25°C IRM trr 81T120 81T120 81T120 81T120 81T120 VCE = 600 V IC = 50 A TJ = 125°C DWLP55-12

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions tentative data sheet product still underdevelopment Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 0 2 04 06 08 0 1 0 0 120 0 2 04 06 08 0 1 0 0 100 200 300 400 500 600 0,00001 0,0001 0,001 0,01 0,1 1 0,00001 0,0001 0,001 0,01 0,1 0 1 02 03 04 05 06 07 08 09 0 1 0 0 300 600 900 1200 1500 0 1 02 03 04 05 06 07 08 09 0 1 0 0 120 180 240 single pulse VCE = 600 V VGE = ±15 V IC = 50 A TJ = 125°C 0 200 400 600 800 1000 1200 100 120 RG = 22 Ω TJ = 125°C VCEK < VCES Eon td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A mJ Eoff mJ Eon ns t ns t RG Ω RG Ω VCE t s mJ Eon mJ Eoff ns t ns t ICM K/W ZthJC IGBTdiode A V 81T120 81T120 81T120 81T120 81T120 VCE = 600 V VGE = ±15 V RG = 22 Ω TJ = 125°C VCE = 600 V VGE = ±15 V RG = 22 Ω TJ = 125°C VCE = 600 V VGE = ±15 V IC = 50 A TJ = 125°C VID...75-12P1