PSII100-06 POWERSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Package with DCB ceramic base plate
- Isolation voltage 3000 V∼
- Planar glass passivated chips
- Low forward voltage drop
- Leads suitable for PC board soldering
- UL Release applied
Applications
- AC and DC motor control
- AC servo and robot drives
- Power supplies
- Welding inverters Advantages
- Easy to mount with four screws
- Space and weight savings
- Improved temperature and power cycling capability
- High power density
- Small and light weight
- Leads with expansion bend for stress relief *NTC optional IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES ± 20 V IC25 TC = 25°C 120 A IC80 TC = 80°C 80 A ICM VGE = ±15 V; RG = 2.2 Ω ; TVJ = 125°C 200 A VCEK RBSOA, Clamped inductive load; L = 100 µH 360 V tSC VCE = VCES; VGE = ±15 V; RG = 2.2 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 379 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 130 A; VGE = 15 V; TVJ = 25°C 2.3 2.9 V TVJ = 125°C 2.6 V VGE(th) IC = 1.5 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES;V GE = 0 V; T VJ = 25°C 1.2 mA TVJ = 125°C 7.5 mA IGES VCE = 0 V; VGE = ± 20 V 400 nA td(on) 25 ns tr 11 ns td(off) 150 ns tf 30 ns Eon 0.8 mJ Eoff 2.3 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 4.2 nF RthJC (per IGBT) 0.33 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 0.66 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 80 A VGE = 15/0 V; RG = 2.2 Ω ECO-TOPTM 1 V3 V6 N1G1 V10 N15 V13 V12 G15 S15 A15 R15 typical picture, for pin configuration see outline drawing
product still underdevelopment POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 130 A IF80 TC = 80°C 80 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 80 A; T VJ = 25°C 1.85 2.06 V TVJ = 125°C 1.40 V IRM IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C 28 A trr VR = 300 V; VGE = 0 V 100 ns RthJC 0.66 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.32 K/W Module Symbol Conditions Maximum Ratings T VJ -40...+125 °C Tstg -40...+150 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M5) 3 Nm 26 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 m m dA Strike distance in air (Pin to heatsink) 11.2 m m Weight 86 g Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 4.75 5.0 5.25 k Ω B25/50 3375 K Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. Package style and outline Dimensions in mm (1mm = 0.0394“)