PSIG100-12 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Package with DCB ceramic base plate
  • Isolation voltage 3000 V∼
  • Planar glass passivated chips
  • Low forward voltage drop
  • Leads suitable for PC board soldering
  • UL registered, E 148688

Applications

  • AC and DC motor control
  • AC servo and robot drives
  • power supplies
  • welding inverters Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling capability POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Preliminary Data Sheet *NTC optional Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. PSIS 100/12* PSSI 100/12* PSIG 100/12 PSIS 100/12* PSSI 100/12* X15 X16 NTC AC 1 IK 10 X15 X16 NTC AC 1 IK 10 T16 PSIG 100/12 IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES ± 20 V IC25 TC = 25°C 138 A IC80 TC = 80°C 94 A ICM VGE = ±15 V; RG = 15 Ω ; TVJ = 125°C 150 A VCEK RBSOA, Clamped inductive load; L = 100 µH V CES tSC VCE = VCES; VGE = ±15 V; RG = 15 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 568 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 125 A; VGE = 15 V; TVJ = 25°C 2.8 3.4 V TVJ = 125°C 3.2 V VGE(th) IC = 3 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES;V GE = 0 V; T VJ = 25°C 5 mA TVJ = 125°C 16 mA IGES VCE = 0 V; VGE = ± 20 V 320 nA td(on) 100 ns tr 50 ns td(off) 650 ns tf 50 ns Eon 12.1 mJ Eoff 10.5 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 5.5 nF RthJC (per IGBT) 0.22 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 0.44 K/W Inductive load, TVJ = 125°C VCE = 600 V; IC = 75 A VGE = 15/0 V; RG = 15 Ω Short Circuit SOA Capability Square RBSOA LMN AI J KS

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSIS PSSI Package style and outline Dimensions in mm (1mm = 0.0394“) PSIG Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 154 A IF80 TC = 80°C 97 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 75 A; T VJ = 25°C 2.2 2.5 V TVJ = 125°C 1.6 V IRM IF = 75 A; diF/dt = 750 A/µs; TVJ = 125°C 79 A trr VR = 600 V; VGE = 0 V 220 ns RthJC 0.45 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 0.9 K/W Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+150 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 24 g Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 4.75 5.0 5.25 k Ω B25/50 3375 K

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSIG PSIS PSSI 100/12 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 0 200 400 600 800 1000 120 100 200 300 100 150 200 250 300 100 125 150 175 0 100 200 300 400 100 125 150 175 13V 11V TJ = 25°C VGE=17VTJ = 125°C VCE = 600V IC = 75A 15V 56789 1 0 1 1 100 125 150 13V 11V VGE=17V 15V VCE = 20V TJ = 25°C VCE V A IC VCE A IC V VV VGE VF A IC A IF nC QG -di/dt V VGE A IRM trr ns A/µs 121T120 TJ = 125°C VR = 600V IF = 75A TJ = 25°C TJ = 125°C IRM trr 121T120 121T120 121T120 121T120 121T120

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSIG PSIS PSSI 100/12 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 0 50 100 150 120 160 05 0 1 0 0 1 5 0 200 400 600 800 0,00001 0,0001 0,001 0,01 0,1 1 0,00001 0,0001 0,001 0,01 0,1 0 8 16 24 32 40 48 56 400 800 1200 1600 2000 0 8 16 24 32 40 48 56 120 160 200 single pulse VCE = 600V VGE = ±15V RG = 15Ω TJ = 125°C VID...125-12P1 VCE = 600V VGE = ±15V IC = 75A TJ = 125°C 0 200 400 600 800 1000 1200 120 160 200 RG = 15Ω TJ = 125°C VCEK < VCES VCE = 600V VGE = ±15V RG = 15Ω TJ = 125°C Eon VCE = 600V VGE = ±15V IC = 75A TJ = 125°C td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A mJ Eoff mJ Eon ns t ns t RG Ω RG Ω VCE t s mJ Eon mJ Eoff ns t ns t ICM K/W ZthJC IGBTdiode V A 121T120 121T120 121T120 121T120 121T120