PSIG75-06 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Package with DCB ceramic base plate
  • Isolation voltage 3000 V∼
  • Planar glass passivated chips
  • Low forward voltage drop
  • Leads suitable for PC board soldering
  • UL registered, E 148688

Applications

  • AC and DC motor control
  • AC servo and robot drives
  • power supplies
  • welding inverters Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density
  • Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PAC TM  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Preliminary Data Sheet *NTC optional Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. PSIS 75/06* PSSI 75/06*PSI 75/06* PSIG 75/06 PSI 75/06* PSIS 75/06* PSSI 75/06* X15 X16 NTC AC 1 IK 10 X15 X16 NTC AC 1 IK 10 T16 PSIG 75/06* IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES ± 20 V IC25 TC = 25°C 69 A IC80 TC = 80°C 48 A ICM VGE = ±15 V; RG = 22 Ω ; TVJ = 125°C 100 A VCEK RBSOA, Clamped inductive load; L = 100 µH V CES tSC VCE = VCES; VGE = ±15 V; RG = 22 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 208 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C 2.3 2.8 V TVJ = 125°C 2.8 V VGE(th) IC = 1 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES;V GE = 0 V; T VJ = 25°C 0.8 mA TVJ = 125°C 4.4 mA IGES VCE = 0 V; VGE = ± 20 V 100 nA td(on) 50 ns tr 55 ns td(off) 300 ns tf 30 ns Eon 1.8 mJ Eoff 1.4 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2.8 nF RthJC (per IGBT) 0.6 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.2 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 Ω LMN AI J KS K10 GH 10 E2 X13 X15 NTC X16 VX 18 OP 9

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSIS PSSI PSI Package style and outline Dimensions in mm (1mm = 0.0394“) PSIG Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 56 A IF80 TC = 80°C 35 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 40 A; T VJ = 25°C 2.32 2.59 V TVJ = 125°C 1.58 V IRM IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C 15 A trr VR = 300 V; VGE = 0 V 70 ns RthJC 1.3 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 2.6 K/W Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+150 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 24 g Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 4.75 5.0 5.25 k Ω B25/50 3375 K

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 0 200 400 600 800 1000 120 150 0123456 120 150 0 40 80 120 160 0123456 120 150 VCE = 300 V IC = 50 A VCE V IC VCE AIC V nC QG -di/dt V VGE IRM trr A/µs IRM trr 11V A 11V VGE= 17 V 15 V 13 V A 4 6 8 1 01 21 41 6 120 150 V VGE A IC TVJ = 25°CTVJ = 125°C V VF IF TVJ = 25°CTVJ = 125°C A ns 42T60 42T60 42T60 42T60 42T60 42T60 TVJ = 25°C VCE = 20 V TVJ = 125°C VR = 300 V IF = 30 A VGE= 17 V 15 V 13 V TVJ = 125°C

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 04 0 8 0 1 2 0 0,0 2,5 5,0 7,5 10,0 100 0 40 80 120 100 200 300 400 0,00001 0,0001 0,001 0,01 0,1 1 10 0,0001 0,001 0,01 0,1 0 1 02 03 04 05 06 0 200 400 600 0 1 02 03 04 05 06 0 single pulse 0 100 200 300 400 500 600 700 120 Eon td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A EoffEon t t RG Ω RG Ω VCE t s mJ Eon mJ Eoff ns t ns t ICM K/W ZthJC IGBT V A mJ ns nsmJ 42T60 42T60 42T60 42T60 42T60 VCE = 300 V VGE = ±15 V RG = 22 Ω TVJ = 125°C VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C RG = 22 Ω TVJ = 125°C VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C VCE = 300 V VGE = ±15 V RG = 22 Ω TVJ = 125°C VID...75-06P1 diode