PSIG50-06 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Package with DCB ceramic base plate
  • Isolation voltage 3000 V∼
  • Planar glass passivated chips
  • Low forward voltage drop
  • Leads suitable for PC board soldering
  • UL registered, E 148688

Applications

  • AC and DC motor control
  • AC servo and robot drives
  • power supplies
  • welding inverters Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density
  • Small and light weight
  • Leads with expansion bend for stress relief POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Preliminary Data Sheet Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. PSIG 50/06 PSI 50/06* PSIS 50/06* PSSI 50/06* PSSI PSIS PSIS 50/06* PSIG 50/06 PSSI 50/06* PSIG *NTC optional Short Circuit SOA Capability Square RBSOA IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES ± 20 V IC25 TC = 25°C 42.5 A IC80 TC = 80°C 29 A ICM VGE = ±15 V; RG = 33 Ω ; TVJ = 125°C 60 A VCEK RBSOA, Clamped inductive load; L = 100 µH VCES tSC VCE = VCES; VGE = ±15 V; RG = 33 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 130 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C 2.4 2.9 V TVJ = 125°C 2.9 V VGE(th) IC = 0.7 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES; V GE = 0 V; TVJ = 25°C 0.6 mA TVJ = 125°C 1.7 mA IGES VCE = 0 V; VGE = ± 20 V 100 nA td(on) 50 ns tr 50 ns td(off) 270 ns tf 40 ns Eon 1.4 mJ Eoff 1.0 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 16 nF RthJC (per IGBT) 0.96 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.92 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 30 A VGE = 15/0 V; RG = 33 Ω PSI 50/06* G H 10 V X 18 K 10 X 16 N T C E 2 L 9 O P 9 X 13 X 15 PSI IK 10 RS 18 AC 1 L 9 F 1 X 15 X 16 NTC T 16 L 9 X 16 NTC X 15 IK 10 R S 18 AC 1 A1 JK 10 S18 LN 9

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSIS Package style and outline Dimensions in mm (1mm = 0.0394“) Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 30 A IF80 TC = 80°C 19 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 30 A; TVJ = 25°C 2.57 2.84 V TVJ = 125°C 1.8 V IRM IF = 15 A; diF/dt = 400 A/µs; TVJ = 125°C 7 A trr VR = 300 V; VGE = 0 V 50 ns RthJC 2.3 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 4.6 K/W Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+150 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 24 g Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 4.75 5.0 5.25 kΩ B25/50 3375 K PSI PSIG PSSI

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 1 Typ. output characteristics Fig. 2 Typ. output charact eristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characte ristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off chara cteristics of free wheeling diode 0 200 400 600 800 1000 120 150 0123456 0 40 80 120 160 0123456 VCE V IC VCE A IC V nC QG -di/dt V VGE IRM trr A/µs MUBW3006A7 IRM trr 11V A 11V VGE= 17V 15V 13V A 4 6 8 1 01 21 41 6 V VGE A IC TJ = 25°CTJ = 125°C V VF IF TJ = 25°CTJ = 125°C A ns 25T60 25T60 25T60 25T60 25T60 TJ = 25°C TJ = 125°C VGE = 17 V 15 V 13 V TJ = 125°C VR = 300 V IF = 30 A VCE = 20V VCE = 300 V IC = 30 A

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 02 0 4 0 6 0 0 2 04 06 0 0,0 0,5 1,0 1,5 2,0 100 200 300 400 0,00001 0,0001 0,001 0,01 0,1 1 10 0,0001 0,001 0,01 0,1 0 1 02 03 04 05 06 07 08 0 0,0 0,5 1,0 1,5 2,0 100 200 300 400 0 1 02 03 04 05 06 07 08 0 single pulse VCE = 300V VGE = ±15V RG = 33Ω TVJ = 125°C VDI...50-06P1 VCE = 300V VGE = ±15V IC = 30A TVJ = 125°C 0 100 200 300 400 500 600 700 RG = 33 Ω TVJ = 125°C VCE = 300V VGE = ±15V RG = 33Ω TVJ = 125°C Eon td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A EoffEon t t RG Ω RG Ω VCE t s mJ Eon mJ Eoff ns t ns t ICM K/W ZthJC IGBT V A mJ ns nsmJ 25T60 25T60 25T60 25T60 25T60 VCE = 300 V VGE = ±15 V IC = 30 A TVJ = 125°C diode