PSHM120-01 POWERSEM | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode
  • ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for PCB mounting
  • UL registered, E 148688

Applications

  • drives and power supplies
  • battery or fuel cell powered
  • automotive, industrial vehicle etc.
  • secondary side of mains power supplies N-Channel Enhancement Mode High dv/dt, Low t rr, HDMOSTM Family MOSFETs Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 75 A IDM TC = 25°C, pulse width limited by T JM 300 A IAR TC = 25°C 75 A EAR TC = 25°C 30 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 300 W Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 100 V VGS(th) VDS = VGS, ID = 4 mA 2.0 4 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = 0.8 • VDSS; TJ = 25°C 250 µA VGS = 0 V; TJ = 125°C 1 mA RDS(on) VGS = 10 V, ID = 0.5 ID25 25 m Ω Pulse test, t < 300 µs, duty cycle d < 2% gfs VDS = 10 V; ID = ID25, pulse test 25 30 S Ciss 4500 pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 pF Crss 800 pF td(on) 20 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 60 110 ns td(off) RG = 2 Ω , (External) 80 110 ns tf 60 90 ns Qg(on) 180 260 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 36 70 nC Qgd 85 160 nC RthJC 0.5 K/W RthCK with heatsink compound (0.42 K/m.K; 50 µm) 0.25 K/W

Dimensions in mm (1 mm = 0.0394") Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 m m dA Strike distance in air (Pin to heatsink) 11.2 m m Weight 24 g Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 75 A ISM Repetitive; 300 A VSD IF = ID25, VGS = 0 V, 1.75 V Pulse test, t < 300 µs, duty cycle d < 2% trr IF = 25 A, -di/dt = 100 A/µs, T J = 25°C 200 ns VR = 25 V T J = 125°C 300 ns Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 4.75 5.0 5.25 k Ω B25/50 3375 K  2005 POWERSEM reserves the right to change limits, test conditions and dimensionsPOWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

 2005 POWERSEM reserves the right to change limits, test conditions and dimensionsPOWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 TJ - Degrees C - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 BV/VG(th) - Normalized 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 VGS(th) TC - Degrees C -50 -25 0 25 50 75 100 125 150 TJ - Degrees C - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 RDS(on) - Normalized 0,50 0,75 1,00 1,25 1,50 1,75 2,00 2,25 2,50 ID - Amperes 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0,8 0,9 1,0 1,1 1,2 1,3 1,4 VGS = 10V VGS = 15V VGS - Volts 0123456789 1 0 ID - Amperes 100 125 150 TJ = 125°C VDS - Volts 100 150 200 VGS = 10V TJ = 25°C ID = 37.5A BVDSS TJ = 25°C TJ = 25°C Fig. 1 Output Characteristics Fig. 2 Input Admittance Fig. 3 R DS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance Fig. 5 Drain Current vs. Case Temperature Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage

 2005 POWERSEM reserves the right to change limits, test conditions and dimensionsPOWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 VDS - Volts 1 10 100 ID - Amperes 100 Gate Charge - nCoulombs 0 25 50 75 100 125 150 175 200 GS VSD - Volt 0,00 0,25 0,50 0,75 1,00 1,25 1,5 0 IS - Amperes 100 125 150 VDS - Volts 0 5 10 15 20 25 1000 2000 3000 4000 5000 6000 Time - Seconds 0,00001 0,0001 0,001 0,01 0,1 1 10 0,001 0,01 0,1 D=0.2 D=0.02 D=0.5 D=0.1 D=0.05 Single pulse Coss Ciss VDS = 50V ID = 37.5A IG = 1mA Limited by RDS(on) Crss TJ = 125°C TJ = 25°C D=0.01 f = 1MHz VDS = 25V Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area Fig.11 Transient Thermal Impedance