PSHI100-06 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • NPT IGBT technology
  • low saturation voltage
  • low switching losses
  • square RBSOA, no latch up
  • high short circuit capability
  • positive temperature coefficient for easy parallelling
  • MOS input, voltage controlled
  • ultra fast free wheeling diodes
  • solderable pins for PCB mounting
  • package with copper base plate
  • Isolation voltage 3000 V∼
  • UL registered, E 148688 Advantages
  • space and weight savings
  • reduced protection circuits
  • package designed for wave soldering
  • High power density
  • Easy to mount with two screws Typical Applications
  • motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding
  • supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger Short Circuit SOA Capability Square RBSOA

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 TC = 25°C 56 A IF80 TC = 80°C 35 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 40 A; T VJ = 25°C 2.32 2.59 V TVJ = 125°C 1.58 V IRM IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C 15 A trr VR = 300 V; VGE = 0 V 70 ns RthJC 1.3 K/W RthJH with heatsink compound (0.42 K/m.K; 50 µm) 2.6 K/W Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+150 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 24 g Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 T = 25°C 455 470 485 k Ω B25/50 3474 K Package style and outline Dimensions in mm (1mm = 0.0394“)

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSHI 100/06 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 0 200 400 600 800 1000 120 150 0123456 120 150 0 40 80 120 160 0123456 120 150 VCE = 300 V IC = 50 A VCE V IC VCE AIC V nC QG -di/dt V VGE IRM trr A/µs IRM trr 11V A 11V VGE= 17 V 15 V 13 V A 4 6 8 1 01 21 41 6 120 150 V VGE A IC TVJ = 25°CTVJ = 125°C V VF IF TVJ = 25°CTVJ = 125°C A ns 42T60 42T60 42T60 42T60 42T60 42T60 TVJ = 25°C VCE = 20 V TVJ = 125°C VR = 300 V IF = 30 A VGE= 17 V 15 V 13 V TVJ = 125°C

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSHI 100/06 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 04 0 8 0 1 2 0 0,0 2,5 5,0 7,5 10,0 100 0 40 80 120 100 200 300 400 0,00001 0,0001 0,001 0,01 0,1 1 10 0,0001 0,001 0,01 0,1 0 1 02 03 04 05 06 0 200 400 600 0 1 02 03 04 05 06 0 single pulse 0 100 200 300 400 500 600 700 120 Eon td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A EoffEon t t RG Ω RG Ω VCE t s mJ Eon mJ Eoff ns t ns t ICM K/W ZthJC IGBT V A mJ ns nsmJ 42T60 42T60 42T60 42T60 42T60 VCE = 300 V VGE = ±15 V RG = 22 Ω TVJ = 125°C VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C RG = 22 Ω TVJ = 125°C VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C VCE = 300 V VGE = ±15 V RG = 22 Ω TVJ = 125°C VID...75-06P1 diode