PSET132 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Isolation voltage 3600 V∼
  • Planar glass passivated chips
  • Low forward voltage drop
  • Leads suitable for PC board soldering
  • UL registered, E 148688

Applications

  • DC motor control
  • Light and temperature control
  • Softstart AC motor controller
  • Solid state switches Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density
  • Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2  2003 POWERSEM reserves the right to change limits, test conditions and dimensions Symbol Test Conditions Maximum Ratings Data according to IEC 60747 refer to a single thyristor unless otherwise stated. ITAVM TC = 85 °C, 180° sine 132 A ITSM TVJ = 45 °C t = 10 ms (50 Hz), sine 3600 A VR = 0 t = 8.3 ms (60 Hz), sine 3850 A TVJ = 125 °C t = 10 ms (50 Hz), sine 3200 A VR = 0 t = 8.3 ms (60 Hz), sine 3420 A ∫∫∫∫∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 64800 A²s VR = 0 t = 8.3 ms (60 Hz), sine 62300 A²s TVJ = 125 °C t = 10 ms (50 Hz), sine 51200 A²s VR = 0 t = 8.3 ms (60 Hz), sine 49100 A²s (di/dt)cr TVJ = 125 °C repetitive, I T = 250 A 150 A/µs f=50Hz, tP=200µs VD=2/3VDRM IG=0.5 A non repetitive,IT = ITAVM 500 A/µs diG/dt=0.5A/µs (dv/dt)cr TVJ = 125 °C V D=2/3VDRM 1000 V/µs RGK= ∞ , method 1 (linear voltage rise) PGM TVJ = 125 °C t P= 30µs ≤ 10 W IT =ITAVM tP=300µs ≤ 5 W PGAVM 0.5 W VRGM 10 V TVJM for 10 sec 150 °C Tstg -40... + 125 °C VISOL 50/60 Hz, RMS t = 1 min 3000 V ∼ IISOL ≤ 1 mA t = 1 s 3600 V ∼ Md Mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. Weight typ. 24 g VRSM VRRM Type VDSM VDRM (V) (V) 900 800 PSET 132/08 1300 1200 PSET 132/12 1500 1400 PSET 132/14 1700 1600 PSET 132/16 1900 1800 PSET 132/18 K- 1 2 ACE-1 SVX- 1 8 E- 3

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions Symbol Test Conditions Characteristic Value ID,IR TVJ = 125°C, VR = VRRM, VD=VDRM ≤ 10 mA VT IT = 200 A, T VJ = 25 °C ≤ 1.3 V VTO For power-loss calculations only 0.8 V rT 1.65 mΩ VGT VD=6V T VJ= 25°C ≤ 1.5 V TVJ=-40°C ≤ 1.6 V IGT VD=6V T VJ= 25°C ≤ 300 mA TVJ=-40°C ≤ 400 mA VGD TVJ= 125°C V D=2/3VDRM ≤ 0.2 V IGD TVJ= 125°C V D=2/3VDRM ≤ 10 mA IL TVJ= 25°C, tP=10µs ≤ 450 mA IG=0.5A, diG/dt=0.5A/µs IH TVJ= 25°C, VD=6V, RGK= ∞≤ 200 mA tgd TVJ= 25°C, VD=1/2VDRM ≤ 2 µs IG=0.5A, diG/dt=0.5A/µs RthJC per thyristor; DC, max. 0.25 K/W per module, max. 0.125 K/W RthJK per thyristor; sine 180° el, typ. 0.35 K/W per module, typ. 0.175 K/W ds Creeping distance on surface 11.2 mm dA Creeping distance in air 5.0 mm a Max. allowable acceleration 50 m/s² Package style and outline Dimensions in mm (1mm = 0.0394“)