PSDI33 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • High level of integration - only one power semiconductor module required for the whole braking system module
  • Isolation voltage 3600 V∼
  • Planar glass passivated chips
  • Ultrafast freewheel diode
  • Leads suitable for PC board soldering
  • Thermistor (optional)

Applications

  • Drive inverters with brake system Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • high temperature and power cycling capability
  • Small and light weight
  • 2 functions in one package POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Data according to IEC 60747 refer to a single diode unless otherwise stated Preliminary Data Sheet IGBT Symbol Test Conditions Maximum Ratings VCES TVJ = 25 °C to 150 °C 600 V VGES continuous ±20 V IC25 TC = 25 °C 44 A IC80 TS = 80 °C 30 A RBSOA VCE = 600 V, RG = 10 Ω , TVJ = 125 °C ICM = 100 A clamped inductive load, L = 100 µH VCEK≤VCES tSC VCE = 600 V, VGE = ±15 V, RG = 10 Ω ,1 0 µ s TVJ = 125 °C, non-repetitive Symbol Test Conditions Characteristic Values TVJ = 25 °C, unless otherwise specified VCE(sat) VGE = 15 V, IC = 10 A, TVJ = 25 °C max. 1.8 V VCE(sat) VGE = 15 V, IC = 10 A, TVJ = 25 °C typ. 1.5 V VCE(sat) TVJ = 125 °C typ. 1.6 V VGE(th) VGE = VCE, IC = 1 mA min. 3 V VGE(th) VGE = VCE, IC = 1 mA max. 5 V ICES VCE = VCES, VGE = 0 V, TVJ = 25 °C max. 0.04 mA ICES TVJ = 125 °C typ. 1 mA IGES VCE = 0 V, VGE = ±20 V max. 100 nA td(on) typ. 31 ns tr typ. 50 ns td(off) typ. 291 ns tf typ. 70 ns Eon typ. 0.60 mJ Eoff typ. 0.31 mJ Cies VCE = 25 V, f = 1 MHz, VGE = 0 V typ. 1600 pF QGon VCE = 480 V, IC = 10 A, VGE = 15 V typ. 140 nC RthJC max. 0.96 K/W RthJH max. tbd K/W Module Symbol Test Conditions Maximum Ratings TVJ -40...+150 °C TJM 150 °C Tstg -40...+150 °C Visol 50/60 Hz t = 1 min 3000 V ∼ Iisol ≤ 1 mA t = 1 s 3600 V ∼ Md Mounting torque (M 4) 1.5-2.0 Nm Weight typ. 24 g inductive load, TVJ = 125 °C VCE = 400 V, IC = 10 A VGE = ±15 V, RG = 10 Ω Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. NTC optional 1 3 APS MVGEXK

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions Package style and outline Dimensions in mm (1mm = 0.0394“) Fast Recovery Diode Symbol Test Conditions Maximum Ratings VRRM TVJ = 25 °C to 150 °C 600 V IF25 TC = 25 °C 30 A IF80 TC = 80 °C 19 A Symbol Test Conditions Characteristic Values TVJ = 25 °C, unless otherwise specified VF IF = 10 A, T VJ = 25 °C max. 3.2 V TVJ = 25 °C typ. 2.2 V TVJ = 125 °C max. 2.4 V IR VR = VRRM,T VJ = 25 °C max. 0.1 mA TVJ = 125 °C typ. 0.1 mA IRM IF = 10 A, diF/dt = -400 A/µs, TVJ = 125 °C tbd A trr VR = 400 V tbd ns RthJC max. 1.15 K/W RthJH with heat transfer paste tbd K/W Rectifier Diodes Symbol Test Conditions Maximum Ratings VRRM 1200 V IFAV25 TC = 25 °C, sine 180 ° 41 A IFAV80 TC = 80 °C, sine 180 ° 28 A IFSM TVJ = 25 °C, T = 10 ms (50Hz) 75 A Symbol Test Conditions Characteristic Values TVJ = 25 °C, unless otherwise specified VF IF = 10 A, T VJ = 25 °C max. 1.8 V TVJ = 25 °C typ. 1.4 V TVJ = 125 °C typ. 1.6 V IR VR = VRRM,T VJ = 25 °C max. 0.05 mA TVJ = 125 °C typ. 0.5 mA trr VR = 100 V, IF = 10 A, -di/dt = 5 A/µs typ. 1 µs RthJC per diode max. 2.5 K/W RthJH with heat transfer paste tbd K/W ds Creeping distance on surface 11.2 mm dA Creeping distance in air 5 mm a Max. allowable acceleration 50 m/s² R25* NTC @ 25 °C 470.000 Ω Module Symbol Test Conditions Characteristic Values *NTC will be changed in future to 5.000 Ω.