PSD61 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • Package with fast-on terminals
  • Isolation voltage 3000 V∼
  • Planar glasspassivated chips
  • Blocking voltage up to 1800 V
  • Low forward voltage drop
  • UL registered E 148688

Applications

  • Supplies for DC power equipment
  • Input rectifiers for PWM inverter
  • Battery DC power supplies
  • Field supply for DC motors Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394“)

POWERSEM GmbH, Walpersdorfer Str. 53  2006 POWERSEM reserves the right to change limits, test conditions and dimensions

91126 D- Schwabach

Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 0.5 1 1.5 2 100 150 200 V [V] F IF [A] T = 150°C VJ T = 25°C VJ 0.4 0.6 0.8 1.2 1.4 1.6 10 0 10 1 10 2 10 3t[ms] I (A) FSM TVJ=45°C TVJ=150°C 1000 900 I F(OV)

0 V RRM

1 V RRM

TVJ=45°C TVJ=150°C t [ms] As Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 7525 100 150 200 250 300 95 100 105 110 115 120 125 130 135 140 145 150 TC DC sin.180° rec.120° rec.60° rec.30° 1.81 0.81 0.48 0.31 0.23 0.15 = RTHCA [K/W] IFAVM [A] Tamb [K] 0 50 100 150 [W] PVTOT PSD 61 Fig. 4 Power dissipation versus direct output current and ambient temperature 50 100 150 200 120 DC sin.180° rec.120° rec.60° rec.30° T (°C) C I dAV [A] Fig.5 Maximum forward current at case temperature 0.01 0.1 1 10 0.5 1.5 K/W Zth t[s] ZthJK ZthJC Fig. 6 Transient thermal impedance per diode (or thyristor), calculated