PSBM24 POWERSEM | Alldatasheet

Document overview

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Technical content

Features

  • High level of integration - only one power semiconductor module required for the whole PFC rectifier
  • Isolation voltage 3600 V∼
  • Planar glass passivated chips
  • Ultrafast boost diode
  • Leads suitable for PC board soldering
  • Thermistor (optional)
  • UL registered, E 148688

Applications

  • Power factor pre-conditioner for SMPS, UPS, battery chargers and inverters
  • Boost topology for SMPS including 1∼ rectifier bridge
  • Power supply for welding equipment Advantages
  • Easy to mount with two screws
  • Space and weight savings
  • high temperature and power cycling capability
  • Small and light weight
  • 3 functions in one package POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Data according to IEC 60747 refer to a single diode unless otherwise stated Preliminary Data Sheet VRSM VRRM Type (V) (V) 600 500 PSBM 24/05 MOSFET Symbol Test Conditions Maximum Ratings VDSS TVJ = 25 °C to 150 °C 500 V VDGR TVJ = 25 °C to 150 °C, RGS = 10 Ω 500 V VGS continuous ±20 V ID TS = 85 °C 24 A ID TS = 25 °C 35 A IDM TS = 25 °C, pulse width limited by TVJ 95 A PD TS = 85 °C 170 W IS VGS = 0 V, TS = 25 °C 24 A ISM VGS = 0 V, TS = 25 °C, pulse width limited by TVJ 95 A Symbol Test Conditions Characteristic Values TVJ = 25 °C, unless otherwise specified VDSS VGS = 0 V, ID = 2mA min. 500 V VGS(th) VDS = 20 V, ID = 20 mA min. 2 V VGS(th) VDS = 20 V, ID = 20 mA max. 5 V IGSS VGS = ±20 V, VDS = 0 V max. ±500 nA IDSS VDS = 500 V, VGS = 0 V max. 2 mA RDS(on) TVJ = 25 °C max. 0.12 Ω RGint TVJ = 25 °C max. 1.5 Ω gfs VDS = 15 V, IDS = 12 A typ. 30 S VDS IDS = 24 V, VGS = 0 V max. 1.5 V td(on) VDS = 250 V, IDS = 12 A, VGS = 10 V max. 100 ns td(off) Zgen. = 1 Ω, L-load max. 220 ns Ciss typ. 8.5 nF Coss VDS = 25 V, f = 1 MHz, VGS = 0 V typ. 0.9 nF Crss typ. 0.3 nF Qg VDS = 250 V, ID = 12 A, VGS = 10 V typ. 350 nC RthJH max. 0.38 K/W Module Symbol Test Conditions Maximum Ratings TVJ -40...+150 °C TJM 150 °C Tstg -40...+150 °C Visol 50/60 Hz t = 1 min 3000 V ∼ Iisol ≤ 1 mA t = 1 s 3600 V ∼ Md Mounting torque (M 4) 1.5-2.0 Nm Weight typ. 24 g NTC optional Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. LM XVCK GH 1 2

POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions Package style and outline Dimensions in mm (1mm = 0.0394“) Boost Diode Symbol Test Conditions Maximum Ratings VRRM 600 V IFAV TS = 85 °C, rectangular δ =0.5 40 A IFSM TVJ = 45 °C, T = 10 ms (50Hz) 300 A T = 8.3 ms (60Hz) 320 A TVJ = 150 °C, T = 10 ms (50Hz) 260 A T = 8.3 ms (60Hz) 280 A P TS = 85 °C 36 W Symbol Test Conditions Characteristic Values TVJ = 25 °C, unless otherwise specified VF IF = 22 A, T VJ = 25 °C max. 1.65 V TVJ = 150 °C max. 1.4 V IR VR = 600 V, T VJ = 25 °C max. 1.5 mA VR = 480 V, T VJ = 25 °C max. 0.25 mA TVJ = 125 °C max. 7 mA VT0 for power-loss calculations only max. 1.14 V rT TVJ = 125 °C max. 10 m Ω IRM IF = 30 A, -diF/dt = 240 A/µs max. 11 A VR = 350 V, TVJ = 100 °C typ. 10 A RthJH max. 1.8 K/W Rectifier Diodes Symbol Test Conditions Maximum Ratings VRRM 800 V IdAV TS = 85 °C, sinus 180 ° 40 A IFSM TVJ = 45 °C, T = 10 ms (50Hz) 300 A T = 8.3 ms (60Hz) 320 A TVJ = 150 °C, T = 10 ms (50Hz) 260 A T = 8.3 ms (60Hz) 280 A P TS = 85 °C 33 W Symbol Test Conditions Characteristic Values TVJ = 25 °C, unless otherwise specified VF IF = 20 A, T VJ = 25 °C max. 1.4 V TVJ = 125 °C max. 1.4 V IR VR = 800 V, T VJ = 25 °C max. 0.25 mA VR = 640 V, T VJ = 125 °C max. 2 mA VT0 for power-loss calculations only max. 1.05 V rT TVJ = 125 °C max. 16 m Ω RthJH max. 2.0 K/W ds Creeping distance on surface 11.2 mm dA Creeping distance in air 5.6 mm a Max. allowable acceleration 50 m/s² R25* NTC @ 25 °C 470.000 Ω Module Symbol Test Conditions Characteristic Values *NTC will be changed in future to 5.000 Ω .