PSB25

PSB25 POWERSEM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

Features

• Package with 1/4“ fast-on terminals
• Isolation voltage 3000 V∼
• Planar glass passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 148688

Applications

• Supplies for DC power equipment
• Input rectifier for PWM inverter
• Battery DC power supplies
• Field supply for DC motors Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature and power cycling capability Package style and outline Dimensions in mm (1mm = 0.0394“) Data according to IEC 60747 refer to a single diode unless otherwise stated  2001 POWERSEM reserves the right to change limits, test conditions and dimensions Symbol Test Conditions Characteristic Value IR VR = VRRM, TVJ = TVJM ≤ 0.3 mA VR = VRRM, TVJ = 25°C ≤ 5 mA VF IF = 150 A, T VJ = 25 °C ≤ 2.2 V VTO For power-loss calculations only 0.85 V rT 12 m Ω RthJC per diode; DC 8.2 K/W per module 2.05 K/W RthJK per diode; DC 9.4 K/W per module 2.35 K/W ds Creeping distance on surface 12.7 mm dA Creeping distance in air 9.4 mm a Max. allowable acceleration 50 m/s² VRSM VRRM Type VDSM VDRM (V) (V) 800 800 PSB 25/08 1200 1200 PSB 25/12 1400 1400 PSB 25/14 1600 1600 PSB 25/16 1800 1800 PSB 25/18 Preliminary Data Sheet POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol Test Conditions Maximum Ratings IdAV TC = 85 °C, (per module) 17 A IdAVM TC = 63 °C, (per module) 21 A IFSM TVJ = 45 °C t = 10 ms (50 Hz), sine 380 A VR = 0 t = 8.3 ms (60 Hz), sine 440 A TVJ = TVJM t = 10 ms (50 Hz), sine 360 A VR = 0 t = 8.3 ms (60 Hz), sine 400 A ∫∫∫∫∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 725 A²s VR = 0 t = 8.3 ms (60 Hz), sine 800 A²s TVJ = TVJM t = 10 ms (50 Hz), sine 650 A²s VR = 0 t = 8.3 ms (60 Hz), sine 650 A²s TVJM 150 °C Tstg -40... + 150 °C VISOL 50/60 Hz, RMS t = 1 min 2500 V ∼ IISOL ≤ 1 mA t = 1 s 3000 V∼ Md Mounting torque (M5) 2 Nm (10-32 UNF) 18 lb.in. Weight typ. 20 g

 2001 POWERSEM reserves the right to change limits, test conditions and dimensionsPOWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 1 1.5 IF VF A V T=150°C T=25°C Fig. 1 Forward current versus voltage drop per diode 0.4 0.6 0.8 1.2 1.4 1.6 10 0 10 1 10 2 10 3t[ms] I (A) FSM TVJ=45°C TVJ=150°C 380 340 I F(OV)

0 V RRM

1 V RRM

Fig. 2 Surge overload current per diode I FSM: Crest value. t: duration 2 4 6 10 TVJ=45°C TVJ=150°C t [ms] As 2 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 50 50 100 105 110 115 120 125 130 135 140 145 150 TC DC sin.180° rec.120° rec.60° rec.30° 9.95 3.95 1.95 0.95 0.45-0.05 = RTHCA [K/W] IFAVM [A] Tamb [K] 05 0 1 0 0 1 5 0 [W] PVTOT PSB 25 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 50 100150200 DC sin.180° rec.120° rec.60° rec.30° T (°C) C I dAV [A] 0.01 0.1 1 10 K/W Zth t[s] ZthJK ZthJC Fig. 6 Transient thermal impedance per diode (or thyristor), calculated