PSB192 POWERSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Package with screw terminals
- Isolation voltage 3000 V∼
- Planar glasspassivated chips
- Blocking voltage up to 1800 V
- Low forward voltage drop
- UL registered E 148688
Applications
- Supplies for DC power equipment
- Input rectifiers for PWM inverter
- Battery DC power supplies
- Field supply for DC motors Advantages
- Easy to mount with two screws
- Space and weight savings
- Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“)
POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 T = 150°Cvj T = 2 5 ° Cvj 20.5 1.51 V [V]F IF 100 200 150 [A] 0.4 0.6 0.8 1.2 1.4 1.6 10 0 10 1 10 2 10 3t[ms] I (A) FSM TVJ=45°C TVJ=150°C 2800 2500 I F(OV)
0 V RRM
1 V RRM
TVJ=45°C TVJ=150°C t [ms] As 2 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 15010050 100 150 200 250 300 350 400 85 100 105 110 115 120 125 130 135 140 145 150 TC DC sin.180° rec.120° rec.60° rec.30° 1.34 0.59 0.34 0.21 0.15 0.09 = RTHCA [K/W] IFAVM [A] Tamb [K] 0 50 100 150 [W] PVTOT PSB 192 Fig. 4 Power dissipation versus direct output current and ambient temperature 50 100 150 200 100 150 200 DC sin.180° rec.120° rec.60° rec.30° I dAV [A] Fig.5 Maximum forward current at case temperature 0.01 0.1 1 10 0.5 K/W Zth t[s] Z thJK Z thJC Fig. 6 Transient thermal impedance per diode (or thyristor), calculated