PNM8P30V12Q GWSEMI | Alldatasheet
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Technical content
The N-channel MOSFET has been designe d specifically to improve the overall efficiency of DC/DC conver ters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low on-resistance and fast switching speed. MOSFET Product Summary V DS (V) R DS(on) (mΩ) I D (A) 12@ V GS =10V 12.0 17@ V GS =4.5V Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =250μA,V GS =0V 30 - - V Zero Gate Voltage Drain Current I DSS V DS =24V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V DS =0V,V GS =±20V - - ±100 nA Gate Threshold Voltage V GS(th) V DS GS , I D =10mA 1.0 1.5 2.5 V Static Drain-Source On-Resistance R DS(ON) V GS =10V, I D =12A - 12 18 mΩ V GS =4.5V, I D =10A - 17 24 mΩ Drain-Source Diode Forward Voltage V SD V GS =0V, I S =1A - 0.65 1 V DYNAMIC PARAMETERS Input Capacitance C ISS V GS =0V, V DS =15V, f=1MHz - 900 1150 pF Output Capacitance C DSS - 135 pF Reverse Transfer Capacitance C RSS - 100 pF SWITCHING PARAMETERS Turn-On Delay Time t d(on) V DS =15V, V GS =10V, R L =1.3Ω, R G =3Ω - 7.5 ns Turn-Off Delay Time t d(off) - 20 ns
Description
Electrical characteristics per line@25℃( unless otherwise specified) S（1、2、3） G（4） PNM8P30V12Q N-Channel MOSFET Rating Symbol Value Units Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Drain Current Continuous I D 12.0 A Pulsed I D 55 A Total Power Dissipation T A =25℃ P D 3.2 W T A =125℃ P D 2.5 W Absolute maximum rating@25℃
F i g 1 . O u t p u t C h a r a c t e r i s t i c s F i g 2 . T r a n s f e r C h a r a c t e r i s t i c s F i g 3 . O n - R e s i s t a n c e v s . D r a i n C u r r e n t F i g 4 . C a p a c i t a n c e Typical Characteristics V GS =6.0V V GS =4.0V V GS =2.8V 100 I D – Drain Current (A) V DS Drain Source Volta g e V T=25°C T=55°C T=125°C V GS Gate to Source Volta g e V I D – Drain Current (A) V GS =4.5V V GS =10V 0.0 0 2 4 6 8 10 r DS(on) – On-Resistance (m Ω) I D Drain Current A C iss C Oss C Rss 300 600 900 1200 C – Capacitance (pF) V DS Drain Source Volta g e V 0 4 8 12 16 20 PNM8P30V12Q N-Channel MOSFET
A 5.800 6.200 0.228 0.244 B 3.800 4.000 0.150 0.157 C 0.330 0.510 0.013 0.020 D 4.700 5.100 0.185 0.200 E 1.350 1.750 0.053 0.069 F 1.270（BSC） 0.050（BSC） G 0.100 0.250 0.004 0.010 H 0.170 0.250 0.006 0.010 A B C D E F G H PNM8P30V12Q N-Channel MOSFET Plastic surface mounted package; 8 leads SOP-8 PACKAGE OUTLINE