PNM6N30V15HY GWSEMI | Alldatasheet

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Applications

 PWM applications  Load switch  Power management Absolute maximum rating@25℃ Rating Symbol Value Units Drain-source Voltage V DS 30 V Gate-source Voltage V GS ±20 V Drain Current I D 15 A Pulsed Drain Current I DM 32 A Total Power Dissipation P D 2.4 W Thermal Resistance Junction-to-Ambient @ Steady State R θJA 52 ℃/W Junction and Storage Temperature Range T T STG -55~+150 ℃ MOSFET Product Summary V DS (V) R DS(on) (mΩ) I D (A) 30 10 @ V GS = 4.5V 15 Bottom View Circuit Diagram Marking (Top View) Feature  High Power and current handing capability  Lead free product is acquired  Surface Mount Package 3015 YYWW PNM6N30V15HY N-Channel MOSFET The PNM6N30V15HY uses advanced trench technology to provide excellent R low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.. DS(ON),

Electrical characteristics per line@25℃ (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250μA 30 - - V Zero Gate Voltage Drain Current I DSS V DS = 30V,V GS = 0V - - 1 μA Gate-Body Leakage Current I GSS V GS = ±20V, V DS = 0V -- 0 . 1 μ A On Characteristics Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250μA 0.5 0.8 1.1 V Static Drain-Source On-Resistance R DS(ON) V GS = 4.5V, I D = 8A - 10 15 mΩV GS = 2.5V, I D = 7.2A - 14 20 V GS = 1.8V, I D = 3.5A - 16 24 Dynamic Parameters Input Capacitance C iss V DS = 12V,V GS = 0V, f= 1MHz - 1179 - pFOutput Capacitance C oss - 138 - Reverse Transfer Capacitance C rss - 130 - Switching Parameters Turn-on Delay Time t d(on) V DD = 20V, R L = 250Ω, V GEN = 4.5V,R GEN = 6Ω -8 . 3- ns Turn-on Rise Time t r - 17.5 - Turn-Off Delay Time t d(off) -3 8- Turn-Off Fall Time t f -1 7- Total Gate Charge Q g V DS = 15V,I D = 6A, V GS = 10V - 27.9 - nCGate-Source Charge Q gs -1 . 7- Gate-Drain Charge Q gd -4 . 6- Drain-Source Diode Characteristics Diode Forward Voltage V SD V GS = 0V,I S = 0.2A - 0.8 1.2 V Notes：1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production PNM6N30V15HY N-Channel MOSFET

0.00 0.05 0.10 0.15 0.20 0.25 V GS = 1.5V V GS = 2.5V V GS = 4.5V Ta = 25℃ R DS (on) - STATIC DRAIN-SOURCE ON-STATE RESISTANCE - Ω I D - DRAIN CURRENT - A Fig.1 Output Characteristics Fi g.2 On-Resistance vs. Drain Current (I) Fig.4 Diode Forward Voltage vs. Current Fig.5 On-Resistance vs. Gate-Source Voltage Fig.3 On-Resistance vs. Drain Current (II) Fig.6 Gate Charge Characteristics 0.1 1 10 100 0.000 0.005 0.010 0.015 0.020 0.025 0.030 -25℃ 25℃ 75℃ 125℃ V GS = 2.5V R DS (on) - STATIC DRAIN-SOURCE ON-STATE RESISTANCE - Ω I D - DRAIN CURRENT - A 0.001 0.01 0.1 100 0 . 00 . 40 . 81 . 2 125 -25 V GS = 0V V SD - SOURCE-DRAIN VOLTAGE - V I S - SOURCE CURRENT - A 02468 1 0 100 120 I D = 0.2A I D = 0.01A R DS (on) - STATIC DRAIN-SOURCE ON-STATE RESISTANCE - Ω V GS - GATE-SOURCE VOLTAGE - V 0 5 10 15 20 25 30 V GS - GATE-SOURCE VOLTAGE - V Q G - Total Gate Charge - nC 01234 V GS = 1.8V V GS = 1.2V V GS =1.4V V GS = 2.5V V GS =1.6V Ta = 25 I D - DRAIN CURRENT - A V DS - Drain-Source Voltage - V PNM6N30V15HY N-Channel MOSFET Typical Characteristics

1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 1000 10000 0.001 0.01 0.1 Rthja(t)=r(t) * Rthja Rthja=128C/W Duty Cycle, D=t1 / t2 0.9 0.7 0.5 0.1 0.3 0.1 0.05 0.02 0.01 0.005 Single Pulse 0.0001 0.00001 0.000001 r(t) - TRANSIENT THERMAL RESISTANCE t1 - PULSE DURATION TIME - sec 0 5 10 15 20 25 30 200 400 600 800 1000 1200 1400 1600 1800 2000 Crss Coss f = 1MHz Ciss CT - Junction Capacitance - pF V DS - Drain-Source Voltage - V Fig.7 Typical Junction Capacitance Fig.8 Safe Operation Area Fig.9 Transient Thermal Resistance 0.01 0.1 1 10 100 0.01 0.1 100 Tj,(Max)=150 ℃ Ta=25 ℃ Single Pulse DUT on MRP FR4 minimum PCB Board Vgs=10V Rds(on) Limited 10μs 100μs 1ms 10ms 100ms DC I d - DRAIN CURRENT - A V ds - DRAIN-SOURCE VOLTAGE - V PNM6N30V15HY N-Channel MOSFET

Pin 1丨D A B J L K Side View N M M D C E G F H 6 4 Bottom View Dim Millimeters Min Max A 1.90 2.10 B 1.90 2.10 C 0.90 1.10 D 0.80 1.00 E 0.55 0.75 E1 0.25 Ref. F 0.25 0.35 G 0.20 0.30 H 0.50 0.70 J 0.50 0.70 K 0.00 0.05 L 0.152 Ref. M 0.25 Ref. N 0.375 Ref. PNM6N30V15HY N-Channel MOSFET Plastic surface mounted package; 6 leads DFN2x2-6 PACKAGE OUTLINE L